SANYO 2SC3591 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Epitaxial Planar Silicon Transistor
High-Definition CRT Display Horizontal
Deflection Output Applications
Ordering number:EN1609D
2SC3591
Features
· Fast switching speed.
· Low saturation voltage.
· Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
C
PC
B
C
hEF1VECI,V1= hEF2VECI,V1=
T
Package Dimensions
unit:mm
2010C
[2SC3591]
JEDEC : T O-220AB EIAJ : SC46
OBC OEC OBE
Tc=25˚C
nimpytxam
V
OBC
V
OBE
V I
)tas(EC
C
I
C
)tas(EB
I,V052=
BC BE
EC
0=001Aµ
E
I,V5=
0=001Aµ
C
A1=
C
A5=
C
I,V01=
A5.0=
C
I,A5=
A5.0=
B
I,A5=
A5.0=
B
51 0105 0104zHM
1 : Base 2 : Collector 3 : Emitter
sgnitaR
004V 002V 6V 7A 21A 4A 05W
˚C ˚C
tinU
8.0V
5.1V
N2098HA (KT)/O2196TS (KOTO) 8-6964/4227KI/3095KI/D064KI, TS No.1609–1/3
2SC3591
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTllaFt
I
I,A1=
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
f
0=004V
E
R,Am1=
= 002V
EB
I,Am1=
0=6V
C
Switching Time Test Circuit
sgnitaR
nimpytxam
I.tiucrictsetdeificepseeS
I,A5=
I–=
C
1B
A5.0=
2B
tinU
3.0sµ
No.1609–2/3
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