Ordering number:EN1430B
NPN Epitaxial Planar Silicon Transistor
2SC3495
High hFE, Low-Frequency
General-Purpose Amplifier Applications
Applications |
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Package Dimensions |
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· AF amplifier, various driver, muting circuit. |
unit:mm |
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Features |
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2003A |
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[2SC3495] |
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· Adoption of FBET process. |
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· High DC current gain (h =500 to 2000). |
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FE |
≥100V). |
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· High breakdown voltage (V |
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CEO |
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· Low collector-to-emitter saturation voltage |
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(VCE(sat)≤0.5V). |
≥15V). |
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· High V |
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(V |
EBO |
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EBO |
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· Small C (C |
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=1.8pF typ). |
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ob |
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ob |
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JEDEC : TO-92 |
B : Base |
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EIAJ |
: SC-43 |
C : Collector |
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E : Emitter |
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Specifications |
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SANYO : NP |
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Absolute Maximum Ratings at Ta = 25˚C |
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Parameter |
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Symbol |
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Conditions |
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Ratings |
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Unit |
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Collector-to-Base Voltage |
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VCBO |
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120 |
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V |
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Collector-to-Emitter Voltage |
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VCEO |
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100 |
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V |
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Emitter-to-Base Voltage |
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VEBO |
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15 |
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V |
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Collector Current |
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IC |
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50 |
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mA |
Collector Current (Pulse) |
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ICP |
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100 |
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mA |
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Base Current |
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IB |
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10 |
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mA |
Collector Dissipation |
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PC |
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500 |
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mW |
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Junction Temperature |
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Tj |
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150 |
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˚C |
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Storage Temperature |
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Tstg |
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–55 to +150 |
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˚C |
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Electrical Characteristics at Ta = 25˚C |
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Parameter |
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Symbol |
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Conditions |
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Ratings |
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Unit |
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min |
typ |
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max |
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Collector Cutoff Current |
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ICBO |
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VCB=80V, IE=0 |
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0.1 |
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µA |
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Emitter Cutoff Current |
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IEBO |
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VEB=10V, IC=0 |
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0.1 |
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µA |
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DC Current Gain |
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hFE |
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VCE=5V, IC=10mA |
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500 |
1000 |
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2000 |
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Gain-Bandwidth Product |
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fT |
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VCE=10V, IC=10mA |
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170 |
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MHz |
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Output Capacitance |
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Cob |
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VCB=10V, f=1MHz |
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1.8 |
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pF |
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1098HA (KT)/6140MO/4237AT/D174MY, TS No.1430–1/3
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