SANYO 2SC3495 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Epitaxial Planar Silicon Transistor

High hFE, Low-Frequency

General-Purpose Amplifier Applications

Ordering number:EN1430B

2SC3495

Applications

· AF amplifier, various driver, muting circuit.

Features

· Adoption of FBET process.

· High DC current gain (hFE=500 to 2000).

· High breakdown voltage (V

· Low collector-to-emitter saturation voltage
(V

· High V

CE(sat)

≤0.5V).

(V

EBO

EBO

≥15V).

· Small Cob (Cob=1.8pF typ).

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

tnerruCesaBI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

CEO

≥100V).

C

PC

B

C

Package Dimensions

unit:mm

2003A

[2SC3495]

JEDEC : T O-92
EIAJ : SC-43

OBC
OEC
OBE

B : Base
C : Collector
E : Emitter
SANYO : NP

021V
001V
51V
05Am
001Am
01Am
005Wm

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuOC

h

V

OBC

V

OBE

V

EF

V

T

V

bo

I,V08=

BC
BE
EC
EC
BC

0=1.0Aµ

E

I,V01=

0=1.0Aµ

C

I,V5=

Am01=

C

I,V01=

Am01=

C

zHM1=f,V01=

N1098HA (KT)/6140MO/4237AT/D174MY, TS No.1430–1/3

nimpytxam

00500010002

sgnitaR

071zHM

8.1Fp

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2SC3495

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egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV

egatloVnwodkaerBesaB-ot-rettimEV

I

)tas(EC

C

I

C

)tas(EB

I

OBC)RB(

C

I

OEC)RB(

C

I

OBE)RB(

E

I,Am01=

Aµ002=

B

I,Am01=

Aµ002=

E

I,Aµ01=

0=021V

E

R,Am1=

=∞ 001V

EB

I,Aµ01=

0=51V

C

sgnitaR

nimpytxam

1.05.0V

7.00.1V

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No.1430–2/3