Ordering number:EN1411C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1352/2SC3416
Ultrahigh-Definition CRT Display
Video Output Applications
Applications
· Color TV chroma output, high-voltage driver applicatons.
Features
· High breakdown voltage : V ≤200V.
CEO
·Small reverse transfer capacitance and excellent high frequency characteristics :
Cre=1.2pF (NPN), 1.7pF (PNP).
·Adoption of FBET process.
( ) : 2SA1352
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2009B
[2SA1352/2SC3416]
JEDEC : TO-126 1 : Emitter
2 : Collector
3 : Base
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
(–)200 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
(–)200 |
V |
Emitter-to-Base Voltage |
VEBO |
|
(–)5 |
V |
Collector Current |
IC |
|
(–)100 |
mA |
Collector Current (Pulse) |
ICP |
|
(–)200 |
mA |
Collector Dissipation |
PC |
|
1.2 |
W |
|
|
Tc=25˚C |
5 |
W |
|
|
|
|
|
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
|
|
|
|
|
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
VCB=(–)150V, IE=0 |
|
|
(–)0.1 |
µA |
Emitter Cutoff Current |
IEBO |
VEB=(–)4V, IC=0 |
|
|
(–)0.1 |
µA |
DC Current Gain |
hFE |
VCE=(–)40V, IC=(–)10mA |
40 |
|
320 |
|
Gain-Bandwidth Product |
fT |
VCE=(–)30V, IC=(–)10mA |
|
70 |
|
MHz |
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(–)20mA, IB=(–)2mA |
|
|
(–)0.6 |
V |
Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=(–)20mA, IB=(–)2mA |
|
|
(–)1.0 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(–)10µA, IE=0 |
(–)200 |
|
|
V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(–)1mA, RBE=∞ |
(–)200 |
|
|
V |
Emitter-to-Base Breakdown Voltage |
V(BR)EBO |
IE=(–)10µA, IC=∞ |
(–)5 |
|
|
V |
Common Base Output Capacitance |
Cob |
VCB=(–)30V, f=1MHz |
|
1.7 |
|
pF |
|
|
|
|
(2.6) |
|
pF |
|
|
|
|
|
|
|
Reverse Transfer Capacitance |
Cre |
VCB=(–)30V, f=1MHz |
|
1.2 |
|
pF |
|
|
|
|
(1.7) |
|
pF |
|
|
|
|
|
|
|
* : 2SA1352/2SC3416 are classified by 10mA hFE as follows :
40 C 80 60 D 120 100 E 200 160 F 320
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/10996TS (KOTO) X-6218/3237KI/3125KI/1114KI , MT No.1411-1/4
2SA1352/2SC3416
No.1411-2/4
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