Ordering number:EN1421A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1338/2SC3392
High-Speed Switching Applications
Features
· Adoption of FBET process.
· High breakdown voltage : V =(–)50V.
CEO
·Large current capacitiy and highTf.
·Very small-sized package permitting sets to be smallsized, slim.
Switching Time Test Circuit
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(For PNP, the polarity is reversed) |
( ) : 2SA1338 |
Unit (resistance : Ω, capacitance : F) |
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Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2018A
[2SA1338/2SC3392]
C : Collector
B : Base
E : Emitter
SANYO : CP
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
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Collector-to-Base Voltage |
VCBO |
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(–)60 |
V |
Collector-to-Emitter Voltage |
VCEO |
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(–)50 |
V |
Emitter-to-Base Voltage |
VEBO |
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(–)5 |
V |
Collector Current |
IC |
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(–)500 |
mA |
Collector Current (Pulse) |
ICP |
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(–)800 |
mA |
Collector Dissipation |
PC |
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200 |
mW |
Junction Temperature |
Tj |
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150 |
˚C |
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Storage Temperature |
Tstg |
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–55 to +150 |
˚C |
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Electrical Characteristics at Ta = 25˚C
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Parameter |
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Symbol |
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Conditions |
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Ratings |
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Unit |
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min |
typ |
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max |
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Collector Cutoff Current |
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ICBO |
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VCB=(–)40V, IE=0 |
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(–)0.1 |
µA |
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Emitter Cutoff Current |
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IEBO |
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VEB=(–)4V, IC=0 |
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(–)0.1 |
µA |
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DC Current Gain |
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hFE |
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VCE=(–)5V, IC=(–)10mA |
100* |
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560* |
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Gain-Bandwidth Product |
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fT |
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VCE=(–)10V, IC=(–)50mA |
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300 |
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MHz |
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(200) |
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Common Base Output Capacitance |
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Cob |
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VCB=(–)10V, f=1MHz |
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3.7 |
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pF |
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(5.6) |
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Collector-to-Emitter Saturation Voltage |
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VCE(sat) |
IC=(–)100mA, IB=(–)10mA |
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0.1 |
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0.3 |
V |
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(0.15) |
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(0.4) |
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Base-to-Emitter Saturation Voltage |
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VBE(sat) |
IC=(–)100mA, IB=(–)10mA |
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0.8 |
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1.2 |
V |
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Collector-to-Base Breakdown Voltage |
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V(BR)CBO |
IC=(–)10µA, IE=0 |
(–)60 |
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V |
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Collector-to-Emitter Breakdown Voltage |
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V(BR)CEO |
IC=(–)100µA, RBE=∞ |
(–)50 |
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V |
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Emitter-to-Base Breakdown Voltage |
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V(BR)EBO |
IE=(–)10µA, IC=0 |
(–)5 |
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V |
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Turn-ON Time |
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ton |
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70(70) |
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ns |
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Storage Time |
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tstg |
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VCC=20V |
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400 |
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ns |
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IC=10IB1=–10IB2=100mA |
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(400) |
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Fall Time |
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tf |
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70(50) |
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ns |
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* : The 2SA1338/2SC3392 are classified by 10mA hFE as follows : |
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Note : 2SA1338 Marking : AL, 2SC3392 Marking : AY |
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2SA1338 |
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2SC3392 |
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hFE rank : 4, 5, 6, 7 |
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100 |
4 |
200 |
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140 |
5 |
280 |
200 |
6 |
400 |
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280 |
7 |
560 |
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SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3197KI/1114KI, MT No.1421-1/4
2SA1338/2SC3392
No.1421-2/4
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