SANYO 2SC3382, 2SA1391 Datasheet
Ordering number:EN1942A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1391/2SC3382
Low Noise AF Amp Applications
Features
· Adoption of FBET process.
· AF amp.
· Low-noise use.
Noise Test Circuit
( ) : 2SA1391
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2003A
[2SA1391/2SC3382]
JEDEC : TO-92 B : Base
EIAJ : SC-43 C : Collector
SANYO : NP E : Emitter
OBC
OEC
OBE
06)–(V
05)–(V
6)–(V
002)–(Am
004)–(Am
004Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
ecnaticapaCtuptuOC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatoVnwodkaerBesaB-ot-rettimEV
leveLesioNV
leveLkaePesioNV
OBC
OBE
hEF1VECI,V6)–(=
hEF2VECI,V6)–(=
T
bo
* : 2SA1391/2SC3382 are classified by 1mA hFE as follows :
002R001082S041004T002065U082
V
BC
V
V
EC
I
)tas(EC
C
I
)tas(EB
C
V
BC
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
V
)eva(ON
CC
V
)kaep(ON
CC
I,V04)–(=
0=1.0)–(Aµ
E
I,V5)–(
=BE
0=1.0)–(Aµ
C
Am1)–(=*001*065
C
C
I,V6)–(=
C
I,Aµ01)–(=
E
R,Am1)–(=
I,Aµ01)–(=
C
I,V03)–(=
I,V03)–(=
Am1.0)–(=07
Am01)–(=052zHM
I,Am001)–(=
B
I,Am001)–(=
B
EB
C
C
Am01)–(=3.0)–(V
Am01)–(=0.1)–(V
zHM1=f,V6)–(=7.2Fp
0=06)–(V
=∞ 05)–(V
0=6)–(V
R,Am1)–(=
k65= Ω V,
g
R,Am1)–(=
g
k65= Ω V,
G
G
nimpytxam
zHk1/Bd77=04Vm
zHk1/Bd77=082Vm
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/4277TA, TS No.1942-1/5
sgnitaR
)002(zHM
)7.3(Fp
)53(Vm
)002(Vm
tinU
2SA1391/2SC3382
No.1942-2/5
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