Ordering number:EN1942A
Features
·Adoption of FBET process.
·AF amp.
·Low-noise use.
Noise Test Circuit
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1391/2SC3382
Low Noise AF Amp Applications
Package Dimensions
unit:mm
2003A
[2SA1391/2SC3382]
( ) : 2SA1391
Specifications
Absolute Maximum Ratings at Ta = 25˚C
JEDEC : TO-92 |
B : Base |
EIAJ : SC-43 |
C : Collector |
SANYO : NP |
E : Emitter |
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
(–)60 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
(–)50 |
V |
Emitter-to-Base Voltage |
VEBO |
|
(–)6 |
V |
Collector Current |
IC |
|
(–)200 |
mA |
Collector Current (Pulse) |
ICP |
|
(–)400 |
mA |
Collector Dissipation |
PC |
|
400 |
mW |
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
|
|
|
|
|
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
VCB=(–)40V, IE=0 |
|
|
(–)0.1 |
µA |
Emitter Cutoff Current |
IEBO |
VEB=(–)5V, IC=0 |
|
|
(–)0.1 |
µA |
DC Current Gain |
hFE1 |
VCE=(–)6V, IC=(–)1mA |
100* |
|
560* |
|
|
hFE2 |
VCE=(–)6V, IC=(–)0.1mA |
70 |
|
|
|
Gain-Bandwidth Product |
fT |
VCE=(–)6V, IC=(–)10mA |
|
250 |
|
MHz |
|
|
|
|
(200) |
|
MHz |
|
|
|
|
|
|
|
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(–)100mA, IB=(–)10mA |
|
|
(–)0.3 |
V |
Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=(–)100mA, IB=(–)10mA |
|
|
(–)1.0 |
V |
Output Capacitance |
Cob |
VCB=(–)6V, f=1MHz |
|
2.7 |
|
pF |
|
|
|
|
(3.7) |
|
pF |
|
|
|
|
|
|
|
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(–)10µA, IE=0 |
(–)60 |
|
|
V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(–)1mA, RBE=∞ |
(–)50 |
|
|
V |
Emitter-to-Base Breakdown Votage |
V(BR)EBO |
IE=(–)10µA, IC=0 |
(–)6 |
|
|
V |
Noise Level |
VNO(ave) |
VCC=(–)30V, IC=(–)1mA, Rg=56kΩ, VG=77dB/1kHz |
|
|
40 |
mV |
|
|
|
|
|
(35) |
mV |
|
|
|
|
|
|
|
Noise Peak Level |
VNO(peak) |
VCC=(–)30V, IC=(–)1mA, Rg=56kΩ, VG=77dB/1kHz |
|
|
280 |
mV |
|
|
|
|
|
(200) |
mV |
|
|
|
|
|
|
|
* : 2SA1391/2SC3382 are classified by 1mA hFE as follows :
100 R 200 140 S 280 200 T 400 280 U 560
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/4277TA, TS No.1942-1/5
2SA1391/2SC3382
No.1942-2/5
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