Ordering number:EN3217
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1331/2SC3361
High-Speed Switching Applications
Features
·Fast switching speed.
·High breakdown voltage.
·Small-sized package permitting the 2SA1331/ 2SC3361-applied sets to be made small and slim.
Switching Time Test Circuit
( ) : 2SA1331 |
(For PNP, the polarity is reversed) |
Unit (resistance : Ω, capacitance : F) |
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2018A
[2SA1331/2SC3361]
C : Collector
B : Base
E : Emitter
SANYO : CP
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Parameter |
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Symbol |
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Conditions |
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Ratings |
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Unit |
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Collector-to-Base Voltage |
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VCBO |
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(–)60 |
V |
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Collector-to-Emitter Voltage |
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VCEO |
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(–)50 |
V |
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Emitter-to-Base Voltage |
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VEBO |
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(–)5 |
V |
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Collector Current |
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IC |
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(–)150 |
mA |
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Collector Current (Pulse) |
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ICP |
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(–)400 |
mA |
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Base Current |
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IB |
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(–)40 |
mA |
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Collector Dissipation |
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PC |
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150 |
mW |
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Junction Temperature |
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Tj |
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125 |
˚C |
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Storage Temperature |
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Tstg |
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–55 to +125 |
˚C |
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Electrical Characteristics at Ta = 25˚C |
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Parameter |
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Symbol |
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Conditions |
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Ratings |
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Unit |
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min |
typ |
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max |
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Collector Cutoff Current |
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ICBO |
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VCB=(–)40V, IE=0 |
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(–)0.1 |
µA |
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Emitter Cutoff Current |
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IEBO |
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VEB=(–)4V, IC=0 |
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(–)0.1 |
µA |
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DC Current Gain |
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hFE |
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VCE=(–)6V, IC=(–)1mA |
90* |
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400* |
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Gain-Bandwidth Product |
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fT |
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VCE=(–)6V, IC=(–)1mA |
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100 |
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MHz |
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Common Base Output Capacitance |
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Cob |
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VCB=(–)6V, f=1MHz |
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(3.5) |
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pF |
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2.7 |
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Collector-to-Emitter Saturation Voltage |
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VCE(sat) |
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IC=(–)10mA, IB=(–)1mA |
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(–)0.1 |
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(–)0.4 |
V |
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Base-to-Emitter Saturation Voltage |
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VBE(sat) |
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IC=(–)10mA, IB=(–)1mA |
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(–)0.75 |
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(–)1.1 |
V |
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Collector-to-Base Breakdown Voltage |
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V(BR)CBO |
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IC=(–)10µA, IE=0 |
(–)60 |
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V |
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Collector-to-Emitter Breakdown Voltage |
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V(BR)CEO |
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IC=(–)1mA, RBE=∞ |
(–)50 |
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V |
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Emitter-to-Base Breakdown Voltage |
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V(BR)EBO |
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IE=(–)10µA, IC=0 |
(–)5 |
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V |
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Delay Time |
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td |
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See specified Test Circuit |
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40 |
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ns |
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Rise Time |
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tr |
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See specified Test Circuit |
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(120) |
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ns |
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80 |
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Storage Time |
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tstg |
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See specified Test Circuit |
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(190) |
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ns |
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230 |
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Fall Time |
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tf |
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See specified Test Circuit |
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(200) |
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ns |
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160 |
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* : The 2SA1331/2SC3361 are classified by 1mA hFE as follows : |
Marking 2SA1331 : O, 2SC3361 : S |
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90 4 180 |
135 5 |
270 |
200 6 |
400 |
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hFE rank : 4, 5, 6 |
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SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/7139MO, TS No.3217-1/4
2SA1331/2SC3361
No.3217-2/4
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