SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Planar Type Silicon Darlington Transistor
For General-Purpose Drivers
Ordering number:EN1332A
2SC3292
Applications
· Especially suited for use in switching of L load
motor driver, printer hammer driver, relay driver, etc.
Features
· High DC current gain.
· Large current capacity and wide ASO.
· Contains 60±10V Zener diode between collector and
base.
· Uniformity in collector-to-base breakdown voltage
due to adoption of accurate impurity diffusion
process.
· 15mJ reverse energy rating.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
* : Built-in Zener diode (60±10V)
OBC
OEC
OBE
C
PC
B
Tc=25˚C
C
Package Dimensions
unit:mm
2010C
[2SC3292]
JEDEC : T O-220AB
EIAJ : SC-46
1 : Base
2 : Collector
3 : Emitter
*05V
*05V
6V
2.1A
5.2A
52.0A
02W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
V
OBC
V
OBE
h
V
EF
V
T
I
)tas(EC
C
I
)tas(EB
C
I,V04=
BC
BE
EC
EC
0=01Aµ
E
I,V5=
0=2Am
C
I,V5=
A5.0=
C
I,V5=
A5.0=
C
I,A5.0=
Am2=
B
I,A5.0=
Am2=0.2V
B
N1098HA (KT)/8253KI, TS No.1332–1/3
nimpytxam
00010004
sgnitaR
081zHM
0.15.1V
tinU
2SC3292
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
ygeanedaolevitcudnidepmalcnUb/sER,Hm001=L
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
OBC)RB(
C
I
OEC)RB(
C
V
no
V
gts
V
f
I,Am1.0=
0=050607V
E
R,Am1=
=∞ 050607V
EB
001= Ω 51Jm
EB
I,V02=
I,A5.0=
I–=
CC
C
I,V02=
CC
C
I,V02=
CC
C
1B
I,A5.0=
1B
I,A5.0=
1B
Am2=
2B
I–=
Am2=
2B
I–=
Am2=
2B
Switching Time Test Circuit Es/b Test Circuit
sgnitaR
nimpytxam
2.0sµ
2.2sµ
4.0sµ
tinU
No.1332–2/3