SANYO 2SC3256, 2SA1292 Datasheet

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Ordering number:EN2370

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1292/2SC3256

60V/15A High-Speed Switching Applications

Applications

·Various inductance, lamp drivers for electrical equipment.

·Inverters, converters (strobo, flash, fluorescent lamp lighting circuit).

·Power amp (high-power care stereo, motor control).

·High-speed siwtching (switching regulators, driver).

Features

· Low saturation voltage.

· Excellent dependence of h on current.

FE

· Fast switching time.

( ) : 2SA1292

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2022

[2SA1292/2SC3256]

E : Emitter

C : Collector

B : Base

Parameter

Symbol

Conditions

Ratings

Unit

 

 

 

 

 

Collector-to-Base Voltage

VCBO

 

(–)80

V

Collector-to-Emitter Voltage

VCEO

 

(–)60

V

Emitter-to-Base Voltage

VEBO

 

(–)5

V

Collector Current

IC

 

(–)15

A

Collector Current (Pulse)

ICP

 

(–)20

A

Collector Dissipation

PC

Tc=25˚C

80

W

Junction Temperature

Tj

 

150

˚C

 

 

 

 

 

Storage Temperature

Tstg

 

–55 to +150

˚C

 

 

 

 

 

Electrical Characteristics at Ta = 25˚C

 

Parameter

 

Symbol

 

Conditions

 

Ratings

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

min

typ

max

 

 

 

 

 

 

 

 

 

 

 

 

Collector Cutoff Current

 

ICBO

VCB=(–)40V, IE=0

 

 

(–)0.1

mA

Emitter Cutoff Current

 

IEBO

VEB=(–)4V, IC=0

 

 

(–)0.1

mA

DC Current Gain

 

hFE

VCE=(–)2V, IC=(–)1A

70*

 

280*

 

Gain-Bandwidth Product

 

fT

VCE=(–)5V, IC=(–)1A

 

100

 

MHz

Collector-to-Emitter Saturation Voltage

 

VCE(sat)

IC=(–)7.5A, IB=(–)0.375A

 

 

(–)0.4

V

Collector-to-Base Breakdown Voltage

 

V(BR)CBO

IC=(–)1mA, IE=0

(–)80

 

 

V

Collector-to-Emitter Breakdown Voltage

 

V(BR)CEO

IC=(–)1mA, RBE=

(–)60

 

 

V

Emitter-to-Base Breakdown Voltage

 

V(BR)EBO

IE=(–)1mA, IC=0

(–)5

 

 

V

Turn-ON Time

 

ton

See specified Test Circuit

 

0.1

 

µs

Storage Time

 

tstg

See specified Test Circuit

 

0.5

 

µs

Fall Time

 

tf

See specified Test Circuit

 

0.1

 

µs

* : The 2SA1292/2SC3256 are classified by 1A hFE as follows :

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

70 Q 140

100 R 200

140 S 280

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71598HA (KT)/5137TA, TS No.2370-1/4

SANYO 2SC3256, 2SA1292 Datasheet

2SA1292/2SC3256

Switching Time Test Circuit

20IB1=–20IB2=IC=6A

(For PNP, the polarity is reversed)

Unit (resistance : Ω, capacitance : F)

No.2370-2/4

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