Ordering number:EN1201C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1291/2SC3255
60V/10A High-Speed Switching Applications
Applications
·Various inductance lamp drivers for electrical equipment.
·Inverters, converters (strobo, flash, fluorescent lamp lighting circuit).
·Power amp (high power car stereo, motor controller).
·High-speed switching (switching regulator, driver).
Features
· Low saturation voltage.
· Excellent current dependence of h .
FE
· Short switching time.
( ) : 2SA1291
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2010B
[2SA1291/2SC3255]
JEDEC : TO-220AB |
E : Emitter |
EIAJ : SC-46 |
C : Collector |
|
B : Base |
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
(–)80 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
(–)60 |
V |
Emitter-to-Base Voltage |
VEBO |
|
(–)5 |
V |
Collector Current |
IC |
|
(–)10 |
A |
Collector Current (Pulse) |
ICP |
|
(–)12 |
A |
Collector Dissipation |
PC |
Tc=25˚C |
40 |
W |
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
|
|
|
|
|
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
VCB=(–)40V, IE=0 |
|
|
(–)0.1 |
mA |
Emitter Cutoff Current |
IEBO |
VEB=(–)4V, IC=0 |
|
|
(–)0.1 |
mA |
DC Current Gain |
hFE |
VCE=(–)2V, IC=(–)1A |
70* |
|
280* |
|
Gain-Bandwidth Product |
fT |
VCE=(–)5V, IC=(–)1A |
|
100 |
|
MHz |
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(–)5A, IB=(–)0.25A |
|
|
(–)0.4 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(–)1mA, IE=0 |
(–)80 |
|
|
V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(–)1mA, RBE=∞ |
(–)60 |
|
|
V |
Emitter-to-Base Breakdown Voltage |
V(BR)EBO |
IE=(–)1mA, IC=0 |
(–)5 |
|
|
V |
Turn-ON Time |
ton |
See specified Test Circuit |
|
0.1 |
|
µs |
Storage Time |
tstg |
See specified Test Circuit |
|
0.5 |
|
µs |
Fall Time |
tf |
See specified Test Circuit |
|
0.1 |
|
µs |
* : The 2SA1291/2SC3255 are classified by 1A hFE as follows :
70 Q 140 100 R 200 140 S 280
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/D251MH/D151MH, (KOTO) No.1201-1/3
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