SANYO 2SC3254, 2SA1290 Datasheet

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SANYO 2SC3254, 2SA1290 Datasheet

Ordering number:EN1200C

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1290/2SC3254

60V/7A High-Speed Switching Applications

Applications

·Various inductance lamp drivers for electrical equipment.

·Inverters, converters (strobo, flash, fluorescent lamp lighting circuit).

·Power amp (high power car stereo, motor controller).

·High-speed switching (switching regulator, driver).

Features

· Low saturation voltage.

· Excellent current dependence of h .

FE

· Short switching time.

( ) : 2SA1290

Package Dimensions

unit:mm

2010B

[2SA1290/2SC3254]

JEDEC : TO-220AB

E : Emitter

EIAJ : SC-46

C : Collector

 

B : Base

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Conditions

Ratings

Unit

 

 

 

 

 

Collector-to-Base Voltage

VCBO

 

(–)80

V

Collector-to-Emitter Voltage

VCEO

 

(–)60

V

Emitter-to-Base Voltage

VEBO

 

(–)5

V

Collector Current

IC

 

(–)7

A

Collector Current (Pulse)

ICP

 

(–)10

A

Collector Dissipation

PC

Tc=25˚C

35

W

Junction Temperature

Tj

 

150

˚C

 

 

 

 

 

Storage Temperature

Tstg

 

–55 to +150

˚C

 

 

 

 

 

Electrical Characteristics at Ta = 25˚C

 

Parameter

 

Symbol

Conditions

 

Ratings

 

Unit

 

 

 

 

 

 

 

 

 

 

 

min

typ

max

 

 

 

 

 

 

 

 

 

 

 

Collector Cutoff Current

 

ICBO

VCB=(–)40V, IE=0

 

 

(–)0.1

mA

Emitter Cutoff Current

 

IEBO

VEB=(–)4V, IC=0

 

 

(–)0.1

mA

DC Current Gain

 

hFE

VCE=(–)2V, IC=(–)1A

70*

 

280*

 

Gain-Bandwidth Product

 

fT

VCE=(–)5V, IC=(–)1A

 

100

 

MHz

Collector-to-Emitter Saturation Voltage

 

VCE(sat)

IC=(–)3.5A, IB=(–)0.175A

 

 

(–)0.4

V

Collector-to-Base Breakdown Voltage

 

V(BR)CBO

IC=(–)1mA, IE=0

(–)80

 

 

V

Collector-to-Emitter Breakdown Voltage

 

V(BR)CEO

IC=(–)1mA, RBE=

(–)60

 

 

V

Emitter-to-Base Breakdown Voltage

 

V(BR)EBO

IE=(–)1mA, IC=0

(–)5

 

 

V

Turn-ON Time

 

ton

See specified Test Circuit

 

0.1

 

µs

Storage Time

 

tstg

See specified Test Circuit

 

0.5

 

µs

Fall Time

 

tf

See specified Test Circuit

 

0.1

 

µs

* : The 2SA1290/2SC3254 are classified by 1A hFE as follows

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

70 Q 140

100 R 200

140 S 280

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71598HA (KT)/D051MH, (KOTO) No.1200-1/3

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