Ordering number:EN1058D
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SA1258/2SC3144
60V/3A for High-Speed Drivers Applications
Features |
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Package Dimensions |
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· HighTf. |
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unit:mm |
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· High switching speed. |
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2010C |
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· Wide ASO. |
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[2SA1258/2SC3144] |
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JEDEC : TO-220AB |
1 : Base |
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( ) : 2SA1258 |
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EIAJ : SC-46 |
2 : Collector |
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Specifications |
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3 : Emitter |
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Absolute Maximum Ratings at Ta = 25˚C |
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Parameter |
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Conditions |
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Ratings |
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Unit |
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Collector-to-Base Voltage |
VCBO |
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(–)70 |
V |
Collector-to-Emitter Voltage |
VCEO |
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(–)60 |
V |
Emitter-to-Base Voltage |
VEBO |
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(–)5 |
V |
Collector Current |
IC |
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(–)3 |
A |
Collector Current (Pulse) |
ICP |
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(–)5 |
A |
Collector Dissipation |
PC |
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1.75 |
W |
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Tc=25˚C |
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20 |
W |
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Junction Temperature |
Tj |
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125 |
˚C |
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Storage Temperature |
Tstg |
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–55 to +125 |
˚C |
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Electrical Characteristics at Ta = 25˚C |
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Parameter |
Symbol |
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Conditions |
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Ratings |
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Unit |
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min |
typ |
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max |
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Collector Cutoff Current |
ICBO |
VCB=(–)40V, IE=0 |
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(–)0.1 |
mA |
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Emitter Cutoff Current |
IEBO |
VEB=(–)5V, IC=0 |
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(–)3 |
mA |
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DC Current Gain |
hFE |
VCE=(–)2V, IC=(–)1.5A |
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2000 |
5000 |
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Gain-Bandwidth Product |
fT |
VCE=(–)5V, IC=(–)1.5A |
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200 |
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MHz |
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Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(–)1.5A, IB=(–)3mA |
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(–1.0) |
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(–)1.5 |
V |
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0.9 |
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Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=(–)1.5A, IB=(–)3mA |
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(–)2.0 |
V |
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Collector-to-Base Saturation Voltage |
V(BR)CBO |
IC=(–)5mA, IE=0 |
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(–)70 |
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V |
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Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(–)50mA, RBE=∞ |
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(–)60 |
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V |
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Rise Time |
ton |
See specified Test Circuit |
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0.3 |
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µs |
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Storage Time |
tstg |
See specified Test Circuit |
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(1.3) |
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µs |
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1.2 |
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Fall Time |
tf |
See specified Test Circuit |
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0.2 |
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µs |
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SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/63095TS/D251MH/3187AT/3085KI/D222KI 8-4742 No.1058-1/4
2SA1258/2SC3144
Specified Test Circuit (for PNP, the polarity is reversed) |
Electrical Connection |
No.1058-2/4
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