Ordering number:EN1066A
NPN Epitaxial Planar Silicon Transistor
2SC3142
High-Frequency
General-Purpose Amplifier Applications
Features |
Package Dimensions |
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· FBET series. |
unit:mm |
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· Compact package enabling compactness of sets. |
2018A |
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· HighTf and small cre (fT=750MHz typ, cre=0.6 typ). |
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[2SC3142] |
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C : Collector |
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B : Base |
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E : Emitter |
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Specifications |
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SANYO : CP |
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Absolute Maximum Ratings at Ta = 25˚C |
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Parameter |
Symbol |
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Conditions |
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Ratings |
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Unit |
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Collector-to-Base Voltage |
VCBO |
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25 |
V |
Collector-to-Emitter Voltage |
VCEO |
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20 |
V |
Emitter-to-Base Voltage |
VEBO |
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3 |
V |
Collector Current |
IC |
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30 |
mA |
Collector Dissipation |
PC |
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150 |
mW |
Junction Temperature |
Tj |
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125 |
˚C |
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Storage Temperature |
Tstg |
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–40 to +125 |
˚C |
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Electrical Characteristics at Ta = 25˚C |
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Parameter |
Symbol |
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Conditions |
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Ratings |
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Unit |
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min |
typ |
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max |
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Collector Cutoff Current |
ICBO |
VCB=10V, IE=0 |
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0.1 |
µA |
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Emitter Cutoff Current |
IEBO |
VEB=3V, IC=0 |
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0.1 |
µA |
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DC Current Gain |
hFE |
VCE=6V, IC=1mA |
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40* |
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180* |
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Gain-Bandwidth Product |
fT |
VCE=6V, IC=4mA |
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450 |
750 |
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MHz |
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Feedback Capacitance |
Cre |
VCB=6V, f=1MHz |
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0.6 |
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0.9 |
pF |
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Base-to-Collector Time Constant |
rbb'CC |
VCE=6V, IC=1mA, f=31.9MHz |
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19 |
ps |
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Noise Figure |
NF |
VCE=6V, IC=1mA, f=100MHz |
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2.2 |
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dB |
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Power Gain |
PG |
VCE=6V, IC=1mA, f=100MHz |
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28 |
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dB |
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* : The 2SC3142 are classified as follows according to hFE at 1mA : |
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40 2 80 |
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60 3 120 |
90 4 180 |
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(Note) Marking : J |
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hFE rank : 2, 3, 4 |
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3098HA (KT)/4207KI/8192KI, TS No.1066–1/5
2SC3142
NF, PG Test Circuit
No.1066–2/5
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