SANYO 2SC3135, 2SA1253 Datasheet
Ordering number:EN1049D
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1253/2SC3135
High-hFE, AF Amp Applications
Features
· High V
· Wide ASO and high durability against breakdown.
( ) : 2SA1253
EBO
.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
Package Dimensions
unit:mm
2033
[2SA1253/2SC3135]
B : Base
C : Collector
E : Emitter
SANYO : SPA
06)–(V
05)–(V
51)–(V
002)–(Am
004)–(Am
052Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOesaBnommoCboCV
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
V
OBC
V
OBE
V
EF
V
T
I
)tas(EC
I
OBC)RB(
I
OEC)RB(
I
OBE)RB(
* : The 2SA1253/2SC3135 are classified by 1mA hFE as follows :
002R001082S041004T002065U082
I,V04)–(=
BC
BE
EC
EC
BC
C
C
C
E
0=1.0)–(Aµ
E
I,V01)–(=
0=1.0)–(Aµ
C
I,V6)–(=
Am1)–(=*001*065
C
I,V6)–(=
Am1)–(=001zHM
C
zHM1=f,V6)–(=)8.3(
I,Am05)–(=
Am5)–(=)2.0–(
B
I,Aµ01)–(=
0=06)–(V
E
R,Am1)–(=
=∞ 05)–(V
EB
I,Aµ01)–(=
0=51)–(V
C
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3097KI/3135KI/D282KI (KOTO) No.1049-1/4
sgnitaR
5.2
51.0
tinU
Fp
5.0)–(V
2SA1253/2SC3135
No.1049-2/4
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