Ordering number:EN1049D
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1253/2SC3135
High-hFE, AF Amp Applications
Features
· High V .
EBO
· Wide ASO and high durability against breakdown.
( ) : 2SA1253
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2033
[2SA1253/2SC3135]
B : Base
C : Collector
E : Emitter
SANYO : SPA
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
(–)60 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
(–)50 |
V |
Emitter-to-Base Voltage |
VEBO |
|
(–)15 |
V |
Collector Current |
IC |
|
(–)200 |
mA |
Collector Current (Pulse) |
ICP |
|
(–)400 |
mA |
Collector Dissipation |
PC |
|
250 |
mW |
Junction Temperature |
Tj |
|
150 |
˚C |
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
VCB=(–)40V, IE=0 |
|
|
(–)0.1 |
µA |
Emitter Cutoff Current |
IEBO |
VEB=(–)10V, IC=0 |
|
|
(–)0.1 |
µA |
DC Current Gain |
hFE |
VCE=(–)6V, IC=(–)1mA |
100* |
|
560* |
|
Gain-Bandwidth Product |
fT |
VCE=(–)6V, IC=(–)1mA |
|
100 |
|
MHz |
Common Base Output Capacitance |
Cob |
VCB=(–)6V, f=1MHz |
|
(3.8) |
|
pF |
|
|
|
|
2.5 |
|
|
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(–)50mA, IB=(–)5mA |
|
(–0.2) |
(–)0.5 |
V |
|
|
|
|
0.15 |
|
|
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(–)10µA, IE=0 |
(–)60 |
|
|
V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(–)1mA, RBE=∞ |
(–)50 |
|
|
V |
Emitter-to-Base Breakdown Voltage |
V(BR)EBO |
IE=(–)10µA, IC=0 |
(–)15 |
|
|
V |
* : The 2SA1253/2SC3135 are classified by 1mA hFE as follows :
100 R 200 140 S 280 200 T 400 280 U 560
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3097KI/3135KI/D282KI (KOTO) No.1049-1/4
2SA1253/2SC3135
No.1049-2/4
Loading...