SANYO 2SC3114 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP/NPN Epitaxial Planar Silicon Transistors
High-V
EBO
, AF Amp Applications
Ordering number:EN1047B
2SA1246/2SC3114
Features
· High V
· Wide ASO and highly resistant to breakdown.
( ) : 2SA1246
Specifications
Absolute Maximum Ratings at Ta = 25˚C
.
EBO
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2003A
[2SA1246/2SC3114]
JEDEC:TO-92
EIAJ:SC-43
SANYO:NP
OBC
OEC
OBE
B:Base
C:Collector
E:Emitter
06)–(V
05)–(V
51)–(V
051)–(Am
003)–(Am
004Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOesabnommoCC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
V
OBC
OBE
EF
T
bo
BC
V
BE
V
EC
V
EC
V
BC
I
)tas(EC
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
* : The 2SA1246/2SC3114 are classified as follows according to hFE at 1mA.
002R001082S041004T002065U082
I,V04)–(=
0=1.0)–(Aµ
E
I,V01)–(=
0=1.0)–(Aµ
C
I,V6)–(=
Am1)–(=*001*065
C
I,V6)–(=
Am1)–(=001zHM
C
zHM1=f,V6)–(=0.3)2.4(Fp
I,Am05)–(=
Am5)–(=5.0)–(V
B
I,Aµ01)–(=
0=06)–(V
E
R,Am1)–(=
=∞ 05)–(V
EB
I,Aµ01)–(=
0=51)–(V
C
71598HA (KT)/3257AT/8253KI, TS (KOTO) No.1047-1/4
nimpytxam
sgnitaR
tinU
2SA1246/2SC3114
No.1047-2/4
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