SANYO 2SC3090 Datasheet

Ordering number:EN1013C
NPN Triple Diffused Planar Silicon Transistor
2SC3090
500V/10A Switching Regulator Applications
Features
· High breakdown voltage (V
· Fast switching speed.
· Wide ASO.
CBO
800V).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
B
C
Package Dimensions
unit:mm
2022
[2SC3090]
E : Emitter C : Collector B : Base
SANYO : TO-3PB
OBC OEC OBE
WP elcycytud,sµ003 %0102A
Tc=25˚C
008V 005V 7V 01A
4W
5.2W 001W
˚C ˚C
Switching Time T est Circuit
Unit (resistance : , capacitance : F)
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82098HA (KT)/D138MO/4207KI/2125MW, TS No.1013-1/4
Electrical Characteristics at Ta = 25˚C
2SC3090
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV egatloVnwodkaerBesaB-ot-rettimEV egatloVniatsuSrettimE-ot-rotcelloCV egatloVniatsuSrettimE-ot-rotcelloCV
egatloVniatsuSrettimE-ot-rotcelloCV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
hEF1VECI,V5= hEF2VECI,V5=
T
no
f
OBC OBE
bo
gts
V V
I
)tas(EC
C
I
)tas(EB
C
V V I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I
)sus(OEC
C
1ICI,A01=
)sus(XEC
I
C
2
)sus(XEC
I
C
RL6.82= V, I
C
RL6.82= V, I
C
RL6.82= V,
I,V005=
BC BE
EC BC
0=01Aµ
E
I,V5=
0=01Aµ
C
A2.1=*51*05
C
A6=8
C
I,A6=
A2.1=0.1V
B
I,A6=
A2.1=5.1V
B
I,V01=
A2.1=81zHM
C
zHM1=f,V01=061Fp
I,Am1=
0=008V
E
R,Am5=
= 005V
EB
I,Am1=
0=7V
C
I,A01=
B B
I,A4.2=
B
depmalc
I,A7=
B
I,A7=
B
I,A7=
B
Hµ05=L,A2=005V
I,Hµ002=L,A2=1
B
I,Hµ002=L,A84.0=1
B
I,A41.0=1
B
CC
I,A41.0=1
B
CC
I,A41.0=1
B
CC
,A4.1–=2
V002=
,A4.1–=2
V002=
,A4.1–=2
V002=
depmalc,A2–=2005V
,A84.0–=2
nimpytxam
* The hFE1 of the 2SC3090 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
03L5104M0205N03
sgnitaR
055V
tinU
0.1sµ
0.3sµ
0.1sµ
No.1013-2/4
Loading...
+ 2 hidden pages