Ordering number:EN1013C
NPN Triple Diffused Planar Silicon Transistor
2SC3090
500V/10A Switching Regulator Applications
Features
· High breakdown voltage (V
· Fast switching speed.
· Wide ASO.
CBO
≥800V).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
B
C
Package Dimensions
unit:mm
2022
[2SC3090]
E : Emitter
C : Collector
B : Base
SANYO : TO-3PB
OBC
OEC
OBE
WP ≤ elcycytud,sµ003 ≤ %0102A
Tc=25˚C
008V
005V
7V
01A
4W
5.2W
001W
˚C
˚C
Switching Time T est Circuit
Unit (resistance : Ω, capacitance : F)
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82098HA (KT)/D138MO/4207KI/2125MW, TS No.1013-1/4
Electrical Characteristics at Ta = 25˚C
2SC3090
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
egatloVniatsuSrettimE-ot-rotcelloCV
egatloVniatsuSrettimE-ot-rotcelloCV
egatloVniatsuSrettimE-ot-rotcelloCV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
hEF1VECI,V5=
hEF2VECI,V5=
T
no
f
OBC
OBE
bo
gts
V
V
I
)tas(EC
C
I
)tas(EB
C
V
V
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I
)sus(OEC
C
1ICI,A01=
)sus(XEC
I
C
2
)sus(XEC
I
C
RL6.82= Ω V,
I
C
RL6.82= Ω V,
I
C
RL6.82= Ω V,
I,V005=
BC
BE
EC
BC
0=01Aµ
E
I,V5=
0=01Aµ
C
A2.1=*51*05
C
A6=8
C
I,A6=
A2.1=0.1V
B
I,A6=
A2.1=5.1V
B
I,V01=
A2.1=81zHM
C
zHM1=f,V01=061Fp
I,Am1=
0=008V
E
R,Am5=
=∞ 005V
EB
I,Am1=
0=7V
C
I,A01=
B
B
I,A4.2=
B
depmalc
I,A7=
B
I,A7=
B
I,A7=
B
Hµ05=L,A2=005V
I,Hµ002=L,A2=1
B
I,Hµ002=L,A84.0=1
B
I,A41.0=1
B
CC
I,A41.0=1
B
CC
I,A41.0=1
B
CC
,A4.1–=2
V002=
,A4.1–=2
V002=
,A4.1–=2
V002=
depmalc,A2–=2005V
,A84.0–=2
nimpytxam
* The hFE1 of the 2SC3090 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
03L5104M0205N03
sgnitaR
055V
tinU
0.1sµ
0.3sµ
0.1sµ
No.1013-2/4