SANYO 2SC3086 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Triple Diffused Planar Silicon Transistor
500V/3A Switching Regulator Applications
Ordering number:EN1010B
2SC3086
Features
· High breakdown voltage (V
· Fast switching speed.
· Wide ASO.
CBO
800V).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
* : The hFE1 of the 2SC3086 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
03L5104M0205N03
OBC OEC OBE
C
PW300µs, Duty Cycle10%
PC
B
C
Tc=25˚C
V
OBC OBE
hEF1VECI,V5= hEF2VECI,V5=
BC
V
BE
I
)tas(EC
C
I
C
)tas(EB
Package Dimensions
unit:mm
2010C
[2SC3086]
JEDEC : T O-220AB EIAJ : SC-46
nimpytxam
I,V005=
0=01Aµ
E
I,V5=
0=01Aµ
C
A3.0=
C
A5.1=
C
I,A5.1=
A3.0=
B
I,A5.1=
A3.0=
B
1 : Base 2 : Collector 3 : Emitter
sgnitaR
*51*05
8
008V 005V 7V 3A 6A 1A
57.1W 04W
˚C ˚C
tinU
0.1V
5.1V
N1098HA (KT)/4207KI/3095MW, TS No.1010–1/4
2SC3086
retemaraPlobmySsnoitidnoC
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV egatloVnwodkaerBesaB-ot-rettimEV egatloVniatsuSrettimE-ot-rotcelloCV egatloVniatsuSrettimE-ot-rotcelloC
emiTNO-nruTt
emiTegarotSt
emiTllaFt
V V
V
T
V
bo
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I
)sus(OEC
C
I
1)sus(XEC
C
I
2)sus(XEC
C
I
no
C
I
gts
C
I
f
C
I,V01=
EC BC
I,A3=
B
I,A3=
depmalc
I,A2= I,A2= I,A2=
A3.0=
C
zHM1=f,V01=
I,Am1=
0=008V
E
R,Am1=
= 005V
EB
I,Am1=
0=7V
C
1B
I,A6.0=
1B
1B 1B 1B
Hµ05=L,A6.0=005V
I,A4.0=
2B
I,A4.0=
2B
I,A4.0=
2B
Switching Time Test Circuit
sgnitaR
nimpytxam
81zHM 04Fp
I,Hµ002=L,A6.0=
2B
I,Hµ002=L,A21.0=
2B
R,A4.0–=
001= V,
L
R,A4.0–=
001= V,
L
R,A4.0–=
001= V,
L
depmalc,A6.0–=005V
,A21.0–=
V002=
CC
V002=
CC
V002=
CC
055V
tinU
0.1sµ
0.3sµ
0.1sµ
No.1010–2/4
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