SANYO 2SC3086 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Triple Diffused Planar Silicon Transistor

500V/3A Switching Regulator Applications

Ordering number:EN1010B

2SC3086

Features

· High breakdown voltage (V

· Fast switching speed.

· Wide ASO.

CBO

≥800V).

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

tnerruCesaBI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

* : The hFE1 of the 2SC3086 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.

03L5104M0205N03

OBC
OEC
OBE

C

PW≤300µs, Duty Cycle≤10%

PC

B

C

Tc=25˚C

V

OBC
OBE

hEF1VECI,V5=
hEF2VECI,V5=

BC

V

BE

I

)tas(EC

C

I

C

)tas(EB

Package Dimensions

unit:mm

2010C

[2SC3086]

JEDEC : T O-220AB
EIAJ : SC-46

nimpytxam

I,V005=

0=01Aµ

E

I,V5=

0=01Aµ

C

A3.0=

C

A5.1=

C

I,A5.1=

A3.0=

B

I,A5.1=

A3.0=

B

1 : Base
2 : Collector
3 : Emitter

sgnitaR

*51*05

8

008V
005V
7V
3A
6A
1A

57.1W
04W

˚C
˚C

tinU

0.1V

5.1V

N1098HA (KT)/4207KI/3095MW, TS No.1010–1/4

2SC3086

retemaraPlobmySsnoitidnoC

tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuOC

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
egatloVniatsuSrettimE-ot-rotcelloCV
egatloVniatsuSrettimE-ot-rotcelloC

emiTNO-nruTt

emiTegarotSt

emiTllaFt

V
V

V

T

V

bo

I

OBC)RB(

C

I

OEC)RB(

C

I

OBE)RB(

E

I

)sus(OEC

C

I

1)sus(XEC

C

I

2)sus(XEC

C

I

no

C

I

gts

C

I

f

C

I,V01=

EC
BC

I,A3=

B

I,A3=

depmalc

I,A2=
I,A2=
I,A2=

A3.0=

C

zHM1=f,V01=

I,Am1=

0=008V

E

R,Am1=

=∞ 005V

EB

I,Am1=

0=7V

C

1B

I,A6.0=

1B

1B
1B
1B

Hµ05=L,A6.0=005V

I,A4.0=

2B

I,A4.0=

2B

I,A4.0=

2B

Switching Time Test Circuit

sgnitaR

nimpytxam

81zHM
04Fp

I,Hµ002=L,A6.0=

2B

I,Hµ002=L,A21.0=

2B

R,A4.0–=

001= Ω V,

L

R,A4.0–=

001= Ω V,

L

R,A4.0–=

001= Ω V,

L

depmalc,A6.0–=005V

,A21.0–=

V002=

CC

V002=

CC

V002=

CC

055V

tinU

0.1sµ

0.3sµ

0.1sµ

No.1010–2/4