SanRex QF20AA60, QF20AA40 Datasheet

61

QF20AA40/60

TRANSISTOR MODULE

THREE PHASES BRIDGE TYPE

Maximum Ratings

Tj 25

Electrical Characteristics

Tj 25

Symbol Item Conditions

Ratings

QF20AA40 QF20AA60

Unit

VCBO Collector-Base Voltage 400 600 V

VCEX Collector-Emitter Voltage

VBE 2V

400 600 V

Emitter-Base Voltage VVEBO 10

IC Collector Current

=pw 1ms 20 40

A

IC

Reverse Collector Current 20 A

I

B

Base Current 2 A

P

T

Total power dissipation

TC 25

160 W

T

j

Junction Temperature

40 150

Tstg Storage Temperature

40 125

VISO Isolation Voltage A.C.1minute 2500 V

Mounting Torque M5 Recommended Value 1.5 2.5 15 25 2.7 28

N m

f B

Mass Typical Value 95 g

Unit A

Symbol Item Conditions

Ratings

Min. Max.

1.0

200

75

100

2.0

2.5

1.0

12.0

2.0

1.6

0.8

2.2

Unit

ICBO Collector Cut-off Current

VCBV

CBO

mA

IEBO Emitter Cut-off Current

VEBV

EBO

mA

300

V

CEO SUS

Collector Emitter
Sustaning Voltage

QF20AA40

QF20AA60

QF20AA40

QF20AA60

Ic 1A

V

450

400

V

CEX SUS

Ic 4A I

B2

1A

V

600

h

FE

DC Current Gain

Ic 20A VCE2V

Ic 20A VCE5V

VCE(sat)

Collector-Emitter Saturation Voltage

Ic 20A IB0.27A

V

V

BE(sat)

Base-Emitter Saturation Voltage

Ic 20A IB0.27A

V

s

V

/W

ton On Time

Storage Time

Fall Time

Transistor part

Diode part

ts

tf

Vcc 300V Ic 20A
I

B1

0.5A I

B2

0.5A

Ic 20A

V

ECO

Rth(j-c)

Switching
Time

Collector-Emitter Reverse Voltage

Thermal Impedance
(junction to case)

QF20AA is six pack Darlington power transistor module which has six transistors
connected in three phase bridge configuraction. Each transistor has a reverse paralleled
fast recovery diode. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction,

IC 20A, VCEX 400/600V
Low saturation voltage for higher efficiency.
High DC current gain h

FE

Isolated mounting base
VEBO 10V for faster switching speed.

Applications

Motor Control VVVF , AC Servo, UPS

62

QF20AA40/60