1
QCA30B/QCB30A40/60
TRANSISTOR MODULE
UL;E76102 M
Maximum Ratings
Tj 25
Electrical Characteristics
Tj 25
Symbol Item Conditions
Ratings
QCA30B40
QCB30A40
QCA30B60
QCB30A60
Unit
VCBO Collector-Base Voltage 400 600 V
VCEX Collector-Emitter Voltage
VBE 2V
400 600 V
Emitter-Base Voltage
VVEBO 10
IC Collector Current
=pw 1ms 30 60
A
IC
Reverse Collector Current 30 A
I
B
Base Current 2 A
P
T
Total power dissipation
TC 25
250 W
T
j
Junction Temperature
40 150
Tstg Storage Temperature
40 125
VISO Isolation Voltage A.C.1minute 2500 V
Mounting
Torque
QCA30B
QCB30A
Mounting
M6
Terminal
M5
Mounting
M5
Terminal
M4
Recommended Value 2.5 3.9 25 40
4.7 48
Recommended Value 1.5 2.5 15 25
2.7 28
Recommended Value 1.5 2.5 15 25
2.7 28
Recommended Value 1.0 1.4 10 14
1.5 15
N m
f B
Mass
QCA30B/QCB30A
Typical Value
240/195
g
Unit A
Symbol Item Conditions
Ratings
Min. Max.
1.0
300
75/100
2.0
2.5
1.0
12.0
2.0
1.4
0.5/1.6
Unit
ICBO Collector Cut-off Current
VCBV
CBO
mA
IEBO Emitter Cut-off Current
VEBV
EBO
mA
300
V
CEO SUS
Collector-Emitter
Sustaning Voltage
QCA30B40
QCB30A40
QCA30B60
QCB30A60
QCA30B40
QCB30A40
QCA30B60
QCB30A60
Ic 1A
V
450
400
V
CEX SUS
Ic 6A I
B2
5A
V
600
h
FE
DC Current Gain
Ic 30A VCE2V/5V
VCE(sat)
Collector-Emitter Saturation Voltage
Ic 30A IB0.4A
V
V
BE(sat)
Base-Emitter Saturation Voltage
Ic 30A IB0.4A
V
s
V
/W
ton On Time
Storage Time
Fall Time
Transistor part Diode part
ts
tf
Vcc 300V Ic 30A
I
B1
0.6A I
B2
0.6A
Ic 30A
V
ECO
Rth(j-c)
Switching Time
Collector-Emitter Reverse Voltage
Thermal Impedance (junction to case)
QCA QCB
QCA30B and QCB30A are dual Darlington power
transistor modules which have series-connected high speed,
high power Darlington transistors. Each transistor has a
reverse paralleled fast recovery diode.
IC30A, V
CEX
400/600V
Low saturation voltage for higher efficiency.
Isolated mounting base
V
EBO
10V for faster switching speed.
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application