3
QCA50B/QCB50A40/60
TRANSISTOR MODULE
UL;E76102 M
Maximum Ratings
Tj 25
Electrical Characteristics
Tj 25
Symbol Item Conditions
Ratings
QCA50B40
QCA50A40
QCA50B60
QCA50A60
Unit
VCBO Collector-Base Voltage 400 600 V
VCEX Collector-Emitter Voltage
VBE 2V
400 600 V
Emitter-Base Voltage
VVEBO 10
IC Collector Current
=pw 1ms 50 100
A
IC
Reverse Collector Current 50 A
I
B
Base Current 3 A
P
T
Total power dissipation
TC 25
300 W
T
j
Junction Temperature
40 150
Tstg Storage Temperature
40 125
VISO Isolation Voltage A.C.1minute 2500 V
Mounting
Torque
QCA50B
QCA50A
Mounting
M6
Terminal
M5
Mounting
M5
Terminal
M4
Recommended Value 2.5 3.9 25 40
4.7 48
Recommended Value 1.5 2.5 15 25
2.7 28
Recommended Value 1.5 2.5 15 25
2.7 28
Recommended Value 1.0 1.4 10 14
1.5 15
N m
f B
Mass
QCA50B/QCA50A
Typical Value
240/195
g
Unit A
Symbol Item Conditions
Ratings
Min. Max.
1.0
300
75/100
2.0
2.5
1.0
12.0
2.0
1.4
0.4/1.3
Unit
ICBO Collector Cut-off Current
VCBV
CBO
mA
IEBO Emitter Cut-off Current
VEBV
EBO
mA
300
V
CEO SUS
Collector Emitter
Sustaning Voltage
QCA50B40
QCB50A40
QCA50B60
QCB50A60
QCA50B40
QCB50A40
QCA50B60
QCB50A60
Ic 1A
V
450
400
V
CEX SUS
Ic 10A I
B2
5A
V
600
h
FE
DC Current Gain
Ic 50A VCE2V/5V
VCE(sat)
Collector-Emitter Saturation Voltage
Ic 50A IB0.67A
V
V
BE(sat)
Base-Emitter Saturation Voltage
Ic 50A IB0.67A
V
s
V
/W
ton On Time
Storage Time
Fall Time
Transistor part Diode part
ts
tf
Vcc 300V Ic 50A
I
B1
1A I
B2
1A
Ic 50A
V
ECO
Rth(j-c)
Switching Time
Collector-Emitter Reverse Voltage
Thermal Impedance (junction to case)
QCA QCB
QCA50B and QCB50A are dual Darlington power
transistor modules which have series-connected high speed,
high power Darlington transistors. Each transistor has a
reverse paralleled fast recovery diode.
IC 50A, VCEX 400/600V
Low saturation voltage for higher efficiency.
Isolated mounting base
V
EBO
10V for faster switching speed.
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application