SanKen STR-A6051M, STR-A6052M, STR-A6053M, STR-A6059H, STR-A6061H Schematic

VAC

C1

C

6

R

1

D

1

BR

1

R2

C2

T1

D

P

PC1

C3

R

OCP

C

Y

C5

1 2 3 4

D/ST D/STBRNC

S/OCP FB/OLP

GND

VCC

8 7

5

STR-A6000

U1

D2

C4

R

C

R

B

R

A

D51

C51

R51

R52

U51

R54

R56

C52

S

PC1

R53

R55

L51

C53

VOUT

(+)

TC_STR-A6000_1_R1

(-)

Products

P

(Adapter)

P

(Open frame)

AC230V

~265V

AC230V

~265V

f

OSC(AVG)

= 67 kHz

f

OSC(AVG)

= 100 kHz

Off-Line PWM Controllers with Integrated Power MOSFET

STR-A6000 Series Data Sheet

General Descriptions

The STR-A6000 series are power ICs for switching

power supplies, incorporating a MOSFET and a current

Package

DIP8

mode PWM controller IC.

The low standby power is accomplished by the automatic switching between the PWM operation in normal operation and the burst-oscillation under light load conditions. The product achieves high cost-performance power supply systems with few external components.

Not to Scale Lineup

Features

• Current Mode Type PWM Control

• Brown-In and Brown-Out function

• Auto Standby Function

No Load Power Consumption < 25mW

• Operation Mode

Normal Operation ----------------------------- PWM Mode

Standby ---------------------------- Burst Oscillation Mode

• Random Swit ching Functi on

• Slope Compensation Function

• Leading Edge Blanking Function

• Bias Assist Function

• Audible Noise Suppression function during Standby

mode

• Protections

・Overcurrent Protection (OCP)*; Pulse-by-Pulse,

built-in compensation circuit to minimize OCP point

variation on AC input vol tage

・Overload Protection (OLP); auto-restart ・Overvoltage Protection (OVP); latched shutdown ・Thermal Shutdown Protection (TSD); latched shutdown

*STR-A60××H D has two types OCP

Typical Application Circuit

• Electrical Characteristics

V

(min.) f

DSS

STR-A605×M 650 V STR-A607×M 800 V STR-A605×H 650 V STR-A606×H 700 V STR-A606×HD 700 V 100 kHz

*STR-A60××HD has two types OCP

• MOSFET ON Resistance and Output Power, P

OUT

R

Products

STR-A6051M 3.95 Ω 18.5 W 14 W 31 W 21 W STR-A6052M 2.8 Ω 22 W 17.5W 35 W 24.5 W STR-A6053M 1.9 Ω 26 W 21W 40 W 28 W STR-A6079M 19.2 Ω 8 W 6 W 13 W 9 W

STR-A6059H

STR-A6069HD STR-A6061H STR-A6061HD STR-A6062H STR-A6062HD STR-A6063HD 2.3 Ω 25 W 20 W 40 W 28 W

* The output power is actual continues power that is measured at

50 °C ambient. The peak output power can be 120 to 140 % of the value stat ed here. Core size, ON Duty, and thermal design affect the output power. It may be less than the value stated here.

DS(ON)

(max.)

AC85

6Ω 17 W 11 W 30 W 19.5 W STR-A6069H

3.95Ω 20.5 W 15 W 35 W 23.5 W

2.8 Ω 23 W 18 W 38 W 26.5 W

Applications

STR-A6000-DSJ Rev.4.4 SANKEN ELECTRIC CO., LTD. 1 Mar. 13, 2015 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2008

• Low power AC/DC adapter

• White goods

• Auxiliary power supply

• OA, AV and industrial equipment

OSC(AVG)

67 kHz

100 kHz

OUT

*

AC85

STR-A6000 Series

1. Absolute Maximum Ratings

Current polarities are defined as follo ws: current going into the IC (sinking) is po sitive current (+) ; and current coming out of the IC (sourcing) is negative current (−). Unless otherwise specified, T

Parameter

= 25 °C, 7 pin = 8 pin.

A

Symbol Test Conditions Pins Rating Units Remarks

1.2

1.8

Drain Peak Current

(1)

I

Single pulse 8 – 1

DPEAK

2.5

A

3.0

4.0

I

Avalanche Energy

S/OCP Pin Voltage

(2)(3)

=1.2A

LPEAK

I

=1.8A

LPEAK

I

=2A

LPEAK

I

=2A

LPEAK

I

LPEAK

I

LPEAK

I

LPEAK

I

LPEAK

=2.2A =2.3A =2.5A =2.7A

8 – 1

1 − 3 −2 to 6 V

V

EAS

S/OCP

7 24 46

47 56 62 72 86

mJ

BR Pin Voltage VBR 2 − 3 −0.3 to 7 V BR Pin Sink Curr ent IBR 2 − 3 1.0 mA

A6079M

A6053M / 63HD A6079M

A6061H / 61HD A6051M A6062H / 62HD A6052M A6063HD A6053M

FB/OLP Pin Voltage FB/OLP Pin S ink Current VCC Pin Voltage

(4)

VFB 4 − 3 −0.3 to 14 V

IFB 4 − 3 1.0 mA

VCC 5 − 3 32 V

PD1

(5)

8 – 1 1.35 W

PD2 5 – 3 1.2 W

(6)

Storage Temperature T

TOP — −20 to 125 °C

— −40 to 125 °C

stg

Channel Temperature Tch — 150 °C

(1)

Refer to 3.3 MOSFET Safe Operating Area Curves

(2)

Refer to Figure 3-2 Aval anche Energy Derating Coe fficient Curve

(3)

Single pulse, V

(4)

Refer to Figure 3-3 Ambient temperature versus power dissipation curve

(5)

When embedding this hybrid IC onto the printed circuit board (cupper area in a 15 mm × 15 mm)

(6)

The recommended internal frame temperature, TF, is 115°C (max.)

= 99 V, L = 20 mH

DD

STR-A6000-DSJ Rev.4.4 SANKEN ELECTRIC CO., LTD. 3 Mar. 13, 2015 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2008

STR-A6000 Series

Test

Conditions

Startup Circuit Operation Voltage

= 13.5 V

Startup Cur rent Biasin g Threshold Voltage

I

OCP Threshold Voltage at Zero ON Duty

OCP Threshold Voltage at 36% ON Duty

OCP Threshold Voltage in Leading Edge Blanking Time

FB/OLP pin Oscillation Stop Threshold Voltage

2. Electrical Characteristics

Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); and current

coming out of the IC (sourcing) is negative current (−).

Unless otherwise specified, T

Parameter Symbol

= 25 °C, VCC = 18 V, 7 pin = 8 pin.

A

Pins Min. Typ. Max. Units Remarks

Power Supply Start up Operation Operation Start Voltage V Operation Stop Voltage

(1)

V

Circuit Current in Operation I

V

Startup Cur rent I

STARTUP

V

Normal Operation Average Switching

Frequency

f

OSC(AVG)

Switching Frequency Modulation Deviation

Maximum ON Duty D

Minimum O N Time t

ON(MIN)

Protection Function

CC(ON)

CC(OFF)

CC(ON)

ST(ON)

CC(BIAS)

V

= − 100 µA

CC

= 12 V

5 − 3 13.8 15.3 16.8 V 5 − 3 7.3 8.1 8.9 V 5 − 3 — — 2.5 mA

8 − 3 — 38 — V 5 − 3 − 3.7 − 2.5 − 1.5 mA 5 − 3 8.5 9.5 10.5 V

60 67 74

8 − 3

kHz

90 100 110 — 5 —

Δf 8 − 3

kHz

— 8 —

MAX

8 − 3 77 83 89 %

— 540 — ns

8 − 3

— 470 —

A60××M A60××H / HD A60××M A60××H / HD

A60××M A60××H / HD

Leading Edge Blanking Time tBW

OCP Compensation Coefficient

OCP Compensation ON Duty

DPC

D

V

OCP(LEB)

Maximum Feedback Current I Minimum Feedback Current I

FB(MAX)

FB(MIN)

V

OLP Threshold Voltage V OLP Operation Current I

CC(OLP)

OLP Delay Time t

(1)

V

CC(BIAS)

> V

CC(OFF)

always.

—

— 280 — — 20 —

— 340 —

—

— 33 —

DPC

OCP(L)

OCP(H)

V

= 32 V

CC

— — 36 — %

1 − 3 0.70 0.78 0.86 V

1 − 3 0.81 0.9 0.99 V

1 − 3 1.32 1.55 1.78 V

V

= 12 V

CC

V

= 12 V

CC

4 − 3 − 340 − 230 − 150 µA 4 − 3 − 30 − 15 − 7 µA

4 − 3 0.85 0.95 1.05 V 4 − 3 7.3 8.1 8.9 V

5 − 3 − 300 600 µA

— 54 68 82 ms

FB(STB)

FB(OLP)

OLP

A60××M

ns

A60××H / HD A60××M

mV/μs

A60××H / HD

A60××HD

STR-A6000-DSJ Rev.4.4 SANKEN ELECTRIC CO., LTD. 4 Mar. 13, 2015 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2008

STR-A6000 Series

Test

Conditions

Brown-Out Threshold Voltage

BR Function Disabling Threshold

Latch Circuits Holding Current

Thermal Sh ut down Operat ing Temperature

A6059H / 69H / 69HD

A6051M / 61H / 61HD

A6052M / 62H / 62HD

Channel to Case Thermal Resistance

Parameter Symbol

FB/OLP Pin Clamp Voltage V

FB(CLAMP)

Brown-In Threshold V oltage V

V

BR Pin Clamp Voltage V

BR(CLAMP)

V

OVP Threshold Voltage V

(2)

I

CC(LATCH)

MOSFET

Drain-to-Source Breakdown Voltage

Drain Leakage Current I

Pins Min. Typ. Max. Units Remarks

4 − 3 11 12.8 14 V

V

BR(IN)

BR(OUT)

BR(DIS)

CC(OVP)

T

— 135 — — °C

j(TSD)

= 32 V

CC

V

= 32 V

CC

V

= 32 V

CC

V

= 32 V

CC

V

= 9.5 V

CC

2 − 3 5.2 5.6 6 V 2 − 3 4.45 4.8 5.15 V 2 − 3 6 6.4 7 V 2 − 3 0.3 0.48 0.7 V 5 − 3 26 29 32 V 5 − 3 — 700 — μA

650 — —

8 – 1

V

DSS

700 — — 800 — — A607×

8 – 1 — — 300 μA

DSS

— — 19.2

V

A605× A606×

A6079M

— — 6

On Resistance

R

DS(ON)

I

= 0.4A

DS

8 − 1

— — 3.95

Ω

— — 2.8

A6063HD A6053M

A6053M

Switching Time

Thermal Resistance

(3)

— — 2.3 — — 1.9 — — 250 ns

tf 8 – 1

— — 400 ns

θ

ch-C

— — — 22 °C/W

(2)

A latch circuit is a circuit operated with Overvoltage Protection function (OVP) and/or Thermal Shutdown function

(TSD) in operation.

(3)

θ

is thermal resistance between channel and case. Case temperature (TC) is measured at the center of the case top

ch-C

surface.

STR-A6000-DSJ Rev.4.4 SANKEN ELECTRIC CO., LTD. 5 Mar. 13, 2015 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2008

STR-A6000 Series

Safe Operating Area

Temperature Derating Coefficient (%)

1.35W

3. Performance Curves

3.1 Derating Curves

100

80

60

40

20

0

0 25 50 75 100 125 150

Channel Temperature, Tch (°C)

Figure 3-1. SOA Temperature Derating Coefficient

Curve

100

80

60

40

20

Temperature Derating Coefficient (%)

AS

0

E

Figure 3-2. Avalanche Energy Derating Coefficient

25 50 75 100 125 150

Channel Temperature, Tch (°C)

Curve

3.2 Ambient Temperature versus Power Dissipation Curve

1.6

1.4

1.2

(W)

1

D1

0.8

0.6

0.4

Power Dissipation, P

0.2

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, TA(°C )

Figure 3-3. Ambient Temperature Versus Power

Dissipation Curve

STR-A6000-DSJ Rev.4.4 SANKEN ELECTRIC CO., LTD. 6 Mar. 13, 2015 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2008

STR-A6000 Series

• STR-A6051M

• STR-A6052M

• STR-A6053M

• STR-A6079M

10

Drain Current, I

Drain-to-Source Voltage (V)

0.1ms

1ms

0.1ms

1ms

0.1ms

1ms

0.1ms

1ms

3.3 MOSFET Safe Operating Area Curves

When the IC is used, the safe operating area curve should be multiplied by the temperature derating coefficient

derived from Figure 3-1. The broken line in the safe operating area curve is the drain current curve limited by on-resistance.

Unless otherwise specified, T

= 25 °C, Single pulse.

A

10

1

(A)

D

0.1

0.01 1 10 100 1000

10

1

(A)

D

0.1

Drain Current, I

1

(A)

D

0.1

Drain Current, I

0.01 1 10 100 1000

Drain-to-Source Voltage (V)

10

1

(A)

D

0.1

Drain Current, I

0.01 1 10 100 1000

Drain-to-Source Voltage (V)

0.01 1 10 100 1000

Drain-to-Source Voltage (V)

STR-A6000-DSJ Rev.4.4 SANKEN ELECTRIC CO., LTD. 7 Mar. 13, 2015 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2008

STR-A6000 Series

• STR-A6059H

• STR-A6061H / 61HD

• STR-A6062H / 62HD

• STR-A6063HD

• STR-A6069H / 69HD

10

Drain Current, I

0.1ms

1ms

0.1ms

1ms

0.1ms

1ms

0.1ms

1ms

Drain Current, I

D

(A)

Drain-to-Source Voltage (V)

10

1

(A)

D

0.1

0.01 1 10 100 1000

Drain-to-Source Voltage (V)

10

1

(A)

D

0.1

Drain Current, I

1

(A)

D

0.1

Drain Current, I

0.01 1 10 100 1000

Drain-to-Source Voltage (V)

0.01 1 10 100 1000

Drain-to-Source Voltage (V)

10

1

(A)

D

0.1

Drain Current, I

0.01 1 10 100 1000

Drain-to-Source Voltage (V)

STR-A6000-DSJ Rev.4.4 SANKEN ELECTRIC CO., LTD. 8 Mar. 13, 2015 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2008

STR-A6000 Series

• STR-A6051M / 61H / 61HD

• STR-A6052M / 62H / 62HD

• STR-A6053M

Transient Thermal Resistance,

Time (s )

1µ 10µ 100µ 1m 10m 100m

10

Transient Thermal Resistance,

3.4 Transient Thermal Resistance Curves

10

1

0.1

θch-c (°C/W)

0.01

1

0.1

θch-c (°C/W)

0.01

10

1

0.1

θch-c (°C/W)

Transient Thermal Resistance,

0.01

Time (s)

Time (s )

STR-A6000-DSJ Rev.4.4 SANKEN ELECTRIC CO., LTD. 9 Mar. 13, 2015 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2008

SanKen STR-A6051M, STR-A6052M, STR-A6053M, STR-A6059H, STR-A6061H Schematic [ru]

Specifications and Main Features

Frequently Asked Questions

User Manual

Contents

1. Absolute Maximum Ratings

2. Electrical Characteristics

3. Performance Curves

3.1 Derating Curves

3.2 Ambient Temperature versus Power Dissipation Curve

3.3 MOSFET Safe Operating Area Curves

3.4 Transient Thermal Resistance Curves