Sanken MN1526 Data Sheet

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Sanken MN1526 Data Sheet

260 V, 15 A

Silicon NPN Epitaxial Planar Bipolar Transistor

MN1526

Features

Adopt LAPT Structure

Kept hFE-IC Linearity “Flat” to High current

Improved Switching Characteristics

High Frequency

Exceptional Safe Operation Area

Complementary to MP1526

RoHS Compliant

VCE

----------------------------------------------------- 260 V

IC---------------------------------------------------------

15 A

PC -----------------------------------------------------

1 5 0 W

fT-----------------------------------------------

6 0 MHz typ.

Package

 

TO-3P-3L

(4)

 

 

C

(1)

(2)

(3)

 

B

C

E

Not to scale

 

 

 

Applications

Power Amplifier Applications Equivalent circuit

High-End Consumer Audio Products

 

Professional Audio Amplifiers

C (2)

SMPS

 

 

B (1)

 

E (3)

Absolute Maximum Ratings

Unless otherwise specified, TA = 25 °C

Parameter

Symbol

Test conditions

Rating

Unit

 

 

 

 

 

Collector-Base Voltage

VCBO

 

260

V

 

 

 

 

 

 

Collector-Emitter Voltage

VCEO

 

2 6

0

V

 

 

 

 

 

 

Emitter-Base Voltage

VEBO

 

5

 

V

 

 

 

 

 

Collector Current

IC

 

15

A

 

 

 

 

 

 

Base Current

IB

 

4

 

A

 

 

 

 

 

 

Collector Power Dissipation

PC

TC = 25 °C

1 5

0

W

 

 

 

 

 

 

Junction Temperature

Tj

 

1 5

0

°C

 

 

 

 

 

Storage Temperature

Tstg

 

− 55 to 150

°C

 

 

 

 

 

 

MN1526-DS Rev.1.0

SANKEN ELECTRIC CO.,LTD.

1

Aug. 05, 2014

http://www.sanken-ele.co.jp/en/

 

MN1526

Thermal Characteristics

Unless otherwise specified, TA = 25 °C

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

 

 

 

 

 

 

 

Junction to Case

RθJC

 

0.83

°C/W

 

 

 

 

 

 

 

Junction to Ambient

RθJA

 

35.7

°C/W

 

 

 

 

 

 

 

Electrical Characteristics

Unless otherwise specified, TA = 25 °C

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

 

 

 

 

 

 

 

Collector Cut-off Current

ICBO

VCB = 260 V, IE = 0 A

1 0 0

µA

 

 

 

 

 

 

 

Emitter Cut-off Current

IEBO

VEB = 5 V, IC = 0 A

1 0 0

µA

 

 

 

 

 

 

 

Collector-Emitter Voltage

VCEO

IC = 25 mA

2 6 0

V

 

 

 

 

 

 

 

DC Current Transfer Ratio

hFE*

VCE = 4 V, IC = 5 A

4 0

1 4 0

 

 

 

 

 

 

 

Collector-Emitter Saturation

VCE (sat)

IC = 5 A, IB = 0.5 A

2.0

V

Voltage

 

 

 

 

 

 

Transition frequency

fT

VCE = 12 V, IE = − 2 A

6 0

MHz

 

 

 

 

 

 

 

Output Capacitance

Cob

VCB = 10 V, f = 1 MHz,

2 5 0

pF

IE = 0 A

 

 

 

 

 

 

*Rank of hFE : 40 to 80 (R), 50 to 100 (O), 70 to 140 (Y)

MN1526-DS Rev.1.0

SANKEN ELECTRIC CO.,LTD.

2

Aug. 05, 2014

 

 

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