- This Service Manual is a property of Samsung Electronics Co.,Ltd.
Any unauthorized use of Manual can be punished under applicable
International and/or domestic law. -
FACSIMILE
WC-M15i Series
SERVICE
FACSIMILE
MANUAL
Contents
1. Precautions
2. Specifications
3. Circuit Description
4. Disassembly
5. T roubleshooting
6. Exploded Views and Parts List
7. Electrical Parts List
8. Block Diagram
9. Connection Diagram
10. Schematic Diagrams
Precautions
1. Precautions
Follow these safety, ESD, and servicing precautions to prevent personal injury and equipment damage.
1-1 Safety Precautions
1. Be sure that all built-in protective devices are in
place. Restore any missing protective shields.
2. Make sure there are no cabinet openings
through which people- particularly childrenmight insert fingers or objects and contact dangerous voltages.
3. When re-installing chassis and assemblies, be
sure to restore all protective devices, including
control knobs and compartment covers.
4. Design Alteration Warning:Never alter or add to
the mechanical or electrical design of this equipment, such as auxiliary connectors, etc. Such
alterations and modifications will void the manufacturer’s warranty.
5. Components, parts, and wiring that appear to
have overheated or are otherwise damaged
should be replaced with parts which meet the
original specifications. Always determine the
cause of damage or overheating, and correct any
potential hazards.
7. Product Safety Notice:Some electrical and
mechanical parts have special safety-related
characteristics which might not be obvious from
visual inspection. These safety features and the
protection they provide could be lost if a replacement component differs from the original. This
holds true, even though the replacement may be
rated for higher voltage, wattage, etc.
8. Components critical for safety are indicated in
the parts list with symbols .
Use only replacement components that have the
same ratings, especially for flame resistance and
dielectric specifications. A replacement part that
does not have the same safety characteristics as
the original may create shock, fire, or other
safety hazards.
6. Observe the original lead dress, especially near
sharp edges, AC, and high voltage power supplies. Always inspect for pinched, out-of-place,
or frayed wiring. Do not change the spacing
between components and the printed circuit
board.
1-1
Precautions
1-2 ESD Precautions
1. Certain semiconductor devices can be easily
damaged by static electricity. Such components
are commonly called “Electrostatically Sensitive
(ES) Devices”, or ESDs. Examples of typical
ESDs are: integrated circuits, some field effect
transistors, and semiconductor “chip” components.
The techniques outlined below should be followed to help reduce the incidence of component
damage caused by static electricity.
CAUTION : Be sure no po wer is applied to the chassis
or circuit, and observe all other safety precautions.
2. Immediately before handling a semiconductor
component or semiconductor-equipped assembly, drain off any electrostatic charge on your
body by touching a known earth ground. Alternatively, employ a commercially available wrist
strap device, which should be removed for your
personal safety reasons prior to applying power
to the unit under test.
3. After removing an electrical assembly equipped
with ESDs, place the assembly on a conductive
surface, such as aluminum or copper foil, or conductive foam, to prevent electrostatic charge
buildup in the vicinity of the assembly.
4. Use only a grounded tip soldering iron to solder
or desolder ESDs.
Use only an “anti-static” solder removal device.
Some solder removal devices not classified as
“anti-static” can generate electrical charges sufficient to damage ESDs.
5. Do not use Freon-propelled chemicals. When
sprayed, these can generate electrical charges
sufficient to damage ESDs.
6. Do not remove a replacement ESD from its protective packaging until immediately bef ore installing it. Most replacement ESDs are packaged
with all leads shorted together by conductive
foam, aluminum f oil, or a comparable conductive
material.
7. Immediately before removing the protective
shorting material from the leads of a replacement ESD, touch the protective material to the
chassis or circuit assembly into which the device
will be installed.
8. Maintain continuous electrical contact between
the ESD and the assembly into which it will be
installed, until completely plugged or soldered
into the circuit.
9. Minimize bodily motions when handling unpackaged replacement ESDs. Normal motions, such
as the brushing together of clothing fabric and
lifting one’s f oot from a carpeted floor , can generate static electricity sufficient to damage an ESD.
1-3 Super Capacitor or Lithium Battery Precautions
1. Exercise caution when replacing a super capacitor or Lithium battery. There could be a danger of
explosion and subsequent operator injury and/or
equipment damage if incorrectly installed.
2. Be sure to replace the battery with the same or
equivalent type recommended by the manufacturer.
1-2
3. Super capacitor or Lithium batteries contain toxic
substances and should not be opened, crushed,
or burned for disposal.
4. Dispose of used batteries according to the manufacture’s instructions.
Specification
2. Specification
Specifications are correct at the time of printing. Product specifications are subject to change without notice.
See below for product specifications.
2-1 General Specifications
ItemDescription
Type of UnitDesktop
Operation SystemWin95/98/ME/ NT /2000/XP
Duplex PrintingYes(Default)
InterfaceIEEE1284(ECP)
USB(without HUB mode)
CPU120 MHz(ARM946ES)
EmulationPCL6
Warming up Time30 Sec (Stand-By), 25˚C
Absolute Storage ConditionTemperature : -20°C ~ 40°C, Humidity : 10% RH ~ 95% RH
Operating ConditionTemperature : 10˚C ~ 32˚C, Humidity : 20% RH ~ 80 % RH
Recommended Operating ConditionTemperature : 16°C ~ 30°C, Humidity : 30% RH ~ 70% RH
Dimension(W X D X H)560 X 433 X 459 mm
WeightAbout 22.5 Kg(with CRU)
* Acoustic NoiseLess than 56/50 dB(Copy/Printing mode)
Power RatingAC 100VAC ~ 127VAC ± 15 %, 50/60Hz ± 3Hz
AC 220VAC ~ 240VAC ± 15 % , 50/60Hz ± 3Hz
Power ConsumptionAvg. 320Wh
Power Save ConsumptionAvg. 35Wh
Recommended System RequirementPentium IV 1.2 Ghz, 128 MB RAM, 220MB(Hard Disk)
Minimum System RequirementPentium II 400Mhz, 64 MB RAM, 120MB(Hard Disk)
LCD 16 characters X 2 lines
Memory4 Mbyte for flash Memory , 16 Mbyte for SDRAM
* Sound Pressure Level, ISO 7779
Samsung Electronics
2-1
Specification
2-2 Printer Specifications
ItemDescription
Printing MethodLaser Scanning Unit + Electro Photography
*SpeedSingle Side : Up to 15 PPM
(Letter Size, 5% Character Pattern)
Duplex : Up to 7.5 IPM(Images/Min) (Letter Size, 5% Character Pattern)
Source of LightLSU(Laser Scanning Unit)
Duplex PrintingYes(Default)
Resolution(Horizontal X Vertical)Up to 1200 x 1200 DPI effective output
Feed MethodCassette Type , By Pass Tray,
By Pass Tray : 100 Sheets(based on 75g/ß
Paper Capacity(Output)Face Down : 250 Sheets
Effective Print Width203 ± 1mm (8 inch)
* Print speed will be affected by Operating System used, computing performance, application software,
connecting method, media type, media size and job complexity.
≥, 20lb)
2-3 Facsimile Specification(SCX-5315F Only)
ItemDescription
Standard Recommendation ITU-T Group3(ITU : International Telecommunications Union)
Application CircuitPSTN or behind PABX
Type Flatbed(with ADF)
*SpeedMono : Up to 1.2 msec/line, Color : Up to 2.5 msec/line
DeviceColor CCD(Charge Coupled Device) Module
InterfaceIEEE1284(ECP Support)
USB(without HUB Mode)
CompatibilityTWAIN Standard , WIA
Optical Resolution(H X V)Up to 600 x 600 DPI effective output
Interpolation ResolutionMax. 4800 dpi
Halftone256 Levels
Specification
Effective Scan width8.2 inches(208 mm)
* Speed will be affected by Operating System used, computing performance, application software, connecting
method, media type, media size and job complexity.
2-5 Copy Specification
ItemDescription
ModeB/W
QualityText/Photo/Mixed
Mono Copy Speed
(1)
Optical Resolution (H x V)Up to 600 x 600 DPI effective output
Multi Copy99 pages
Maximum Original SizeLegal
Maximum Page SizeLegal
Platen(SDMP) : Up to 12 cpm in A4 size, IDC 5% pattern
ADF (SDMP) : Up to 12 cpm in A4 size, IDC 5% pattern
ADF (MDSP) : Text/mixed : Approx. 7 cpm in A4 size, IDC 5% pattern
: Photo : Approx. 3 cpm in A4 size, IDC 5% pattern
Paper Type SelectionPlain , Legal , Cardstock , Transparency
Zoom RangePlaten : 25 ~ 400%(1% Step)
ADF : 25~100 %(1% Step)
NOTE :
(1) Speed claims based on the test chart : Letter size.
SDMP : Single Document Multiple Printout
MDSP : Multiple Document Single Printout
• Speed will be affected by Operating System used, computing performance, application software,
connecting method, media type, media size and job complexity.
Samsung Electronics
2-3
Specification
2-6 Telephone Specification(SCX-5315F Only)
ItemDescription
Speed Dial80EA
Tone/PulseTone only user modeTone/Pulse selectable in tech mode.
2-7 Consumables
ItemDescription
TypeSeparate type
(Toner Cartridge / Drum Cartridge)
LifeToner CartridgeUp to 6,000 sheets
( 5% coverage pattern, simplex normal mode )
Drum CartridgeUp to 15,000 sheets
(simplex normal mode )
Samsung Electronics2-4
Circuit Description
3. Circuit Description
3-1 Main PBA
3-1-1 Summary
The main circuit that consists of CPU, MFP controller (built-in 32bit RISC processor core: ARM946ES) including various I/O device drivers, system memory, scanner, printer, motor driver, PC I/F, and FAX transceiver controls the whole system. The entire structure of the main circuit is as follows :
M
DEV
SUPPLY
H
V
BLADE
LCD 20x2line
T
H
V
SCAN
OPE
MICOM
- LCD Drive
- Key Scan
5P
Platen
15P D-SUB
D-SUB
CONN.
FLAT MOTOR
Opti o n
ADF
MOTOR
DRIVER
DADF MOTOR
PAPER SENSOR
POS,DET
3P x 2EA
CENTRONICS
CABLE
SCF
OUT BIN FULL
PCNT
HYPER
DEV CNT
OPC
USB CABLE
22P
CCD MODULE
CN8
CN2
C
24P
N
6
Flash DIMM
Net workCARD
C
N
1
36P
6
C
N
8P
3
1
C
N
1
4P
2
C
N
2P
1
9
C
N
2
4P
5
C
N
4P
1
9
C
N
1
2P
7
C
N
4P
1
3
C
N
5
CN1
10P
MAIN PBA
CN2 0CN24CN3
CN30
CN27
External
Auditron
2P6P2P
2P
(2MB)
PS3
CN15(100 P)
SDRAM DIMM
16MB
CN15(100P)
CN28
3P
3P
CN2 2
C
N
10P
1
4
C
N
8P
3
3
C
11P
N
4
C
N
2P
7
C
N
3P
1
0
C
N
3P
1
1
3P
C
N
1
8
C
3P
N
2
3
C
N
4P
2
1
C
N
2P
2
6
C
N
4P
2
9
TRANSFORMER
4P
1
600/ / 600
SMPS / HVPS
+5V/+24V/+12V/+24Vs/Fuser
DEV M OTOR
FEED MOTOR
LSU
THERMISTOR
FAN1
FAN1
DEV_ID
TONER_TX
TONER_RX
PTL
COVER OPEN
S/W
+24 V / +5V
Tx: Rx
MODEM
EXT_PHONE
SEPRATING
PART
LIU
LINE 1
EXTERNAL
PHONE
INTERFACE
PART
EXTERNAL
PHONE
SOLENOID
PICK_UP,DUPLEX,MP
PAPER
SEN SOR
FEED+P. EMP,EXIT,MP
LINE
INT ERFAC E
<Block Diagram>
3-1
Circuit Description
3-2 Circuit Operation
3-2-1 Clock
1) System Clock
DeviceOscillator
Frequency12MHz
• ARM946ES RISC PROCESSOR: drives PLL internally uses 120MHz and external Bus uses 60 MHz.
2) Video Clock
DeviceOscillator
Frequency57.0167MHz
• Fvd =((PAPER 1SCAN LINE sending time * SCAN effective late /1SCAN LINE DOT #)*4
=(600dpi*600dpi*58.208mm/s*216mm*4)/(25.4mm*25.4mm*76.1%)=28.697MHz
•PAPER 1SCAN LINE sending time=SCAN LINE interval/DOCUMENT SPEED (58.208mm/S)
•1SCAN LINE DOT #=MAZ SCAN distance(216mm)*DOT# per 1mm
3)USB Clock
DeviceOscillator
Frequency48MHz
3-2-2 POWER ON/OFF RESET
1) Signal Operation
Input Signal +3.3V Power Line (VCC)
Output Signal ARM946ES nRESET and 29LU16ø
• POWER ON/OFF DETECT VCC RISING/FALLING 4.5° ≠4.6V
B11SD15I/OSDRAM Bus Data[15]BD8TARP_TC
C22VSS_PLL1-VSS for Core PLLD23VDD_PLL1-VDD for Core PLL (1.8V)D34DATA0 / GPI1I/OROM Bus Data[0] / GPI[1]BD8TRP_FT
E45MCLKICore PLL Clock Input (12MHz)TLCHT_TC
C16DATA6 / GPI7I/OROM Bus Data[6] / GPI[7]BD8TRP_FT
D17DATA1 / GPI2I/OROM Bus Data[1] / GPI[2]BD8TRP_FT
E38DATA5 / GPI6I/OROM Bus Data[5] / GPI[6]BD8TRP_FT
E29VDD_RING_OSC-VDD for Ring Oscillator (1.8V)E110DATA3 / GPI4I/OROM Bus Data[3] / GPI[4]BD8TRP_FT
F311DATA9 / GPI10I/OROM Bus Data[9] / GPI[10]BD8TRP_FT
G412GND-GROUND_RINGF213DATA8 / GPI9I/OROM Bus Data[8] / GPI[9]BD8TRP_FT
F114DATA7 / GPI8I/OROM Bus Data[7] / GPI[8]BD8TRP_FT
G315DATA12 / GPI13I/OROM Bus Data[12] / GPI[13]BD8TRP_FT
G216DATA11 / GPI12I/OROM Bus Data[11] / GPI[12]BD8TRP_FT
G117DATA10 / GPI11I/OROM Bus Data[10] / GPI[11]BD8TRP_FT
H318DATA4 / GPI5I/OROM Bus Data[4] / GPI[5]BD8TRP_FT
H219DATA15 / GPI16I/OROM Bus Data[15] / GPI[16]BD8TRP_FT
H120DATA14 / GPI15I/OROM Bus Data[14] / GPI[15]BD8TRP_FT
J421VDD_CORE-VDD for CORE (1.8V)J322DATA19I/OROM Bus Data[19]BD8TRP_FT
J223DATA18I/OROM Bus Data[18]BD8TRP_FT
J124DATA17I/OROM Bus Data[17]BD8TRP_FT
K225DATA16I/OROM Bus Data[16]BD8TRP_FT
K326DATA22I/OROM Bus Data[22]BD8TRP_FT
K127DATA13 / GPI14I/OROM Bus Data[14] / GPI[14]BD8TRP_FT
L128DATA20I/OROM Bus Data[20]BD8TRP_FT
L229DATA21I/OROM Bus Data[21]BD8TRP_FT
L330DATA25I/OROM Bus Data[25]BD8TRP_FT
L431DATA26I/OROM Bus Data[26]BD8TRP_FT
M132DATA23I/OROM Bus Data[23]BD8TRP_FT
M233DATA24I/OROM Bus Data[24]BD8TRP_FT
M334DATA29I/OROM Bus Data[29]BD8TRP_FT
M435DATA30I/OROM Bus Data[30]BD8TRP_FT
N136DATA27I/OROM Bus Data[27]BD8TRP_FT
N237DATA28I/OROM Bus Data[28]BD8TRP_FT
N338VDD_ARM-VDD for ARMP139DATA31I/OROM Bus Data[31]BD8TRP_FT
P240DATA2 / GPI3I/OROM Bus Data[2] / GPI[3]BD8TRP_FT
R141VDD_CORE-VDD for CORE (1.8V)P342nROMCS2OROM Bank2 Select_nB4TR_TC
3-3
Circuit Description
Ball NoPin NoPin NameI/ODescriptionPAD
R243nRDOROM Bus Read_nB4TR_TC
T144nROMCS0OROM Bank0 Select_nB4TR_TC
P445nROMCS3 / nIOCS3 /
R346nWROROM Bus Write_nB4TR_TC
T247nROMCS1OROM Bank1 Select_nB4TR_TC
U148ADDR12OROM Bus Addr[12]B8TR_TC
T349ADDR10OROM Bus Addr[10]B8TR_TC
U250ADDR13OROM Bus Addr[13]B8TR_TC
V151ADDR15OROM Bus Addr[15]B8TR_TC
T452ADDR11OROM Bus Addr[11]B8TR_TC
U353ADDR14OROM Bus Addr[14]B8TR_TC
V254ADDR16OROM Bus Addr[16]B8TR_TC
W155ADDR19I/OROM Bus Addr[19]BD8TRP_TC
V356ADDR17I/OROM Bus Addr[17]BD8TRP_TC
W257ADDR20I/OROM Bus Addr[20]BD8TRP_TC
Y158nIOCS0OIO Bank0 Select_nB4TR_TC
W359ADDR21I/OROM Bus Addr[21]BD8TRP_TC
Y260nIOCS1OIO Bank1 Select_nB4TR_TC
W461ADDR22I/OROM Bus Addr[22]BD8TRP_TC
V462ADDR18I/OROM Bus Addr[18]BD8TRP_TC
U563ADDR7OROM Bus Addr[7]B8TR_TC
Y364VDD_COREOVDD for CORE (1.8V)Y465nIOCS2 / nDACK0 /
V566ADDR1OROM Bus Addr[1]B8TR_TC
W567ADDR8OROM Bus Addr[8]B8TR_TC
Y568ADDR9OROM Bus Addr[9]B8TR_TC
V669ADDR4OROM Bus Addr[4]B8TR_TC
U770ADDR6OROM Bus Addr[6]B8TR_TC
W671ADDR2OROM Bus Addr[2]B8TR_TC
Y672ADDR3OROM Bus Addr[3]B8TR_TC
V773ADDR5OROM Bus Addr[5]B8TR_TC
W774VDD_ARM-VDD for ARM Hard Macro(1.8V)-
Y775VDD_CORE-VDD for CORE (1.8V)V876EINT0 / TnRSTIExt. Interrupt0 / TAP Controller
W877EINT1 / TCKIExt. Interrupt1 / TAP Controller
Y878EINT2 / nRXD2 / TMSIExt. Interrupt2 / U AR T RX DAT A[2] /
N19135nFSYNC / nLFPHA1I/OFrame Sync_n / Motor Out A_nBD4STRP_FT
N20136nHSYNCILine Sync_nSCHMITT_FT
M17137nSTROBEIParallel Port Data Strobe_nSCHMITT_FT
M18138PD5I/OParallel Port Data[5]BD4STRP_FT
M19139nWAIT0 / PDEI/OWait_n / Parallel Port Data EnableBD4STRP_TC
M20140nIOCS5 / nSCS4 /
L19141PD3I/OParallel Port Data[3]BD4STRP_FT
L18142nFAULTOParallel Port Fault_nB4TR_TC
L20143nDREQ0 / GPI0 /
K20144nRESETIExternal Reset_n InputSCHMITT_TC
K19145PERROROParallel Port Paper ErrorB4TR_TC
K18146nAUTOFDIParallel Port Auto Feed_nSCHMITT_FT
K17147nDACK2 / DQM7 /
F20157PD0I/OParallel Port Data[0]BD4STRP_FT
G18158SLCT_OUTOParallel Port Selection OutB4TR_TC
F19159nACKOParallel Port Acknowledge_nB4TR_TC
E20160nDACK1 / DQM5 /
G17161nRSTOUT / CLKOUT /
F18162SA7OSDRAM Bus Addr[7]BD8TARP_TC
E19163SA9OSDRAM Bus Addr[9]BD8TARP_TC
GPO11
PWMOUT3
GPO3 / TONEOUT
ADDR23
GPO5
GPO6
GPO8
GPO4
GPO7
GPO0
OLSU Clock / Command Busy_n /
GPO[11]
I/OEngine Message_n / DMA
ACK[3]_n / PWM Output[3]
ODRAM Bank4 / IO Bank5 Select_n /
GPO[3] / Tone Pulse Out
I/ODMA REQ[0]_n / GPI[0] / ADDR[23]BD4STRP_TC
ODMA ACK[2]_n / DQM[7] / GPO[5]BD8TARP_TC
I/ODMA REQ[2]_n / DQM[6] / GPO[6]BD8TARP_TC
I/ODMA REQ[1]_n / DQM[4] / GPO[8]BD8TARP_TC
OIO Bank4 / SDRAM Bank3 Select_n
/ GPO[4]
ODMA ACK[1]_n / DQM[5] / GPO[7]BD8TARP_TC
OInternal Reset_n Out / Internal Sys-
tem Clock Out / GPO[0]
B4TR_TC
BD4STRP_FT
BD8TARP_TC
BD8TARP_TC
B8TR_TC
3-6
Ball NoPin NoPin NameI/ODescriptionPAD
D20164VDD_USB-VDD for USB Hard Macro (1.8V)E18165SA10OSDRAM Bus Addr[10]BD8TARP_TC
D19166SA12OSDRAM Bus Addr[120BD8TARP_TC
C20167BA0OSDRAM Bus Bank Select Addr[0]BD8TARP_TC
E17168nRASOSDRAM Row Address Select_nBD8TARP_TC
D18169DQM2OSDRAM Bus DQM[2]BD8TARP_TC
C19170DQM1OSDRAM Bus DQM[1]BD8TARP_TC
B20171BA1OSDRAM Bus Bank Select Addr[1]BD8TARP_TC
C18172DQM0OSDRAM Bus DQM[0]BD8TARP_TC
B19173DQM3OSDRAM Bus DQM[3]BD8TARP_TC
A20174RREFI/OUSB PHY Register ReferenceANA_FT
A19175VSSL-VSS for Deserialisation Flip flopsB18176VDDL-VDD for Deserialisation Flip flops
(1.8V)
B17177VSSB-VSS for buffersC17178DMNSI/OUSB2 DATA-ANA_FT
D16179DPLSI/OUSB2 DATA+ANA_FT
A18180VDD3_USB-VDD for USB1.1 FS compliance
(3.3V)
A17181VSSC-VSS for DLL and Xor treeC16182VDDC-VDD for DLL and Xor tree (1.8V)B16183VDDB-VDD for buffers (1.8V)A16184VDD_USB-VDD for USB Hard Macro (1.8V)C15185UCLKIUSB PLL Input Clock (12MHz)TLCHT_TC
D14186VSS_PLL2-VSS for USB PLLB15187VDD_PLL2-VSS for USB PLL (1.8V)A15188SA11OSDRAM Bus Addr[11]BD8TARP_TC
C14189SA6OSDRAM Bus Addr[6]BD8TARP_TC
B14190SA5OSDRAM Bus Addr[5]BD8TARP_TC
A14191SA8OSDRAM Bus Addr[8]BD8TARP_TC
C13192SA3OSDRAM Bus Addr[3]BD8TARP_TC
B13193SA2OSDRAM Bus Addr[2]BD8TARP_TC
A13194SA4OSDRAM Bus Addr[4]BD8TARP_TC
D12195SA0OSDRAM Bus Addr[0]BD8TARP_TC
C12196SA1OSDRAM Bus Addr[1]BD8TARP_TC
B12197CKEOSDRAM Clock EnableBD8TARP_TC
A12198nWEOSDRAM Write Enable_nBD8TARP_TC
B11199SD30I/OSDRAM Bus Data[30]BD8TARP_TC
C11200SD31I/OSDRAM Bus Data[31]BD8TARP_TC
A11201SD29I/OSDRAM Bus Data[29]BD8TARP_TC
A10202SD25I/OSDRAM Bus Data[25]BD8TARP_TC
B10203SD26I/OSDRAM Bus Data[26]BD8TARP_TC
C10204SD27I/OSDRAM Bus Data[27]BD8TARP_TC
D10205SD28I/OSDRAM Bus Data[28]BD8TARP_TC
A9206SD21I/OSDRAM Bus Data[21]BD8TARP_TC
B9207SD22I/OSDRAM Bus Data[22]BD8TARP_TC
Circuit Description
-
-
3-7
Circuit Description
Ball NoPin NoPin NameI/ODescriptionPAD
C9208SD23I/OSDRAM Bus Data[23]BD8TARP_TC
D9209SD24I/OSDRAM Bus Data[24]BD8TARP_TC
A8210SD18I/OSDRAM Bus Data[18]BD8TARP_TC
B8211SDCLK0OSDRAM Clock Output0BD8TARP_TC
C8212SD20I/OSDRAM Bus Data[20]BD8TARP_TC
A7213SD14I/OSDRAM Bus Data[14]BD8TARP_TC
B7214SD19I/OSDRAM Bus Data[19]BD8TARP_TC
A6215SD11I/OSDRAM Bus Data[11]BD8TARP_TC
C7216SD16I/OSDRAM Bus Data[16]BD8TARP_TC
B6217SDCLK1OSDRAM Clock Output1BD8TARP_TC
A5218SD12I/OSDRAM Bus Data[12]BD8TARP_TC
D7219SD17I/OSDRAM Bus Data[17]BD8TARP_TC
C6220SD13I/OSDRAM Bus Data[13]BD8TARP_TC
B5221SD8I/OSDRAM Bus Data[8]BD8TARP_TC
A4222SD5I/OSDRAM Bus Data[5]BD8TARP_TC
C5223SD9I/OSDRAM Bus Data[9]BD8TARP_TC
B4224SD6I/OSDRAM Bus Data[6]BD8TARP_TC
A3225SD3I/OSDRAM Bus Data[3]BD8TARP_TC
D5226SD10I/OSDRAM Bus Data[10]BD8TARP_TC
C4227SD7I/OSDRAM Bus Data[7]BD8TARP_TC
B3228SD4I/OSDRAM Bus Data[4]BD8TARP_TC
B2229SD1I/OSDRAM Bus Data[1]BD8TARP_TC
A2230SD0I/OSDRAM Bus Data[0]BD8TARP_TC
C3231SD2I/OSDRAM Bus Data[2]BD8TARP_TC
3-8
Circuit Description
2) RISC MICROCESSOR PIN & INTERFACE(CIP4)
NoPin NameI/ODescriptionP ad TypeCurrent drive
1GND2PVss Supplyvss2i2NTESTINand Tree Test Mode Selectionpticd3TMIGlobal Test Mode Selectionpticd4TEST1ITest Mode Selection 1pticd5GND17PVss Supplyvss3op6TEST2ITest Mode Selection 2pticd7XDACK1IDMA Acknowledge Signal 1ptis8XDREQ1ODMA Request Signal 1phob44mA
9VDD1PVdd Supplyvdd2i-
10XDACK2IDMA Acknowledge Signal 2ptis11XDREQ2ODMA Request Signal 2phob44mA
12XDACK3IDMA Acknowledge Signal 3ptis13XDREQ3ODMA Request Signal 3phob44mA
14nRESETIGlobal Resetptis15CLK_OUTOPLL Clock Outphob1212mA
16GND3PVss Supplyvss2i17XPIClock Oscillation Inputphsoscm2610~40MHz
18XPOUTOClock Oscillation Outputphsoscm2610~40MHz
19GNDD16PVss Supplyvss2t_abb20FILTER*OPLL Filter Pump Outpoar50_abb21GND1PVss Supplyvbb_abb22VDDA9,VDDD9PVdd Supplyvdd2t_abb23GND24,GND33PVss Supplyvss3t_abb24RTC_XOORTC Clock Oscillation Outputpoar50_abb25RTC_XIIRTC Clock Oscillation Inputpiar50_abb26VDD8,VDD18PVdd Supplyvdd3t_abb27IRQOInterrupt Request Signalphob44mA
28nCSICIP4 Chip Selectptis29GND4PVss Supplyvss2i30nRDICIP4 CPU Read Controlptis31nWRICIP4 CPU Write Controlptis32BA1IBank Address Bus [1]ptis33BA0IBank Address Bus [0]ptis34GND19PVss Supplyvss3op35A5ICPU Address Bus [5]ptis36A4ICPU Address Bus [4]ptis37A3ICPU Address Bus [3]ptis38VDD2PVdd Supplyvdd2i39A2ICPU Address Bus [2]ptis40A1ICPU Address Bus [1]ptis41A0ICPU Address Bus [0]ptis42GND5PVss Supplyvss2i43D31BCPU Data Bus [31]phbst88mA
3-9
Circuit Description
NoPin NameI/ODescriptionPad TypeCurrent drive
44D30BCPU Data Bus [30]phbst88mA
45D29BCPU Data Bus [29]phbst88mA
46D28BCPU Data Bus [28]phbst88mA
47GND20PVss Supplyvss3op48D27BCPU Data Bus [27]phbst88mA
49D26BCPU Data Bus [26]phbst88mA
50D25BCPU Data Bus [25]phbst88mA
51VDD11PVdd Supplyvdd3op52D24BCPU Data Bus [24]phbst88mA
53D23BCPU Data Bus [23]phbst88mA
54D22BCPU Data Bus [22]phbst88mA
55D21BCPU Data Bus [21]phbst88mA
56GND6PVss Supplyvss2i57D20BCPU Data Bus [20]phbst88mA
58D19BCPU Data Bus [19]phbst88mA
59D18BCPU Data Bus [18]phbst88mA
60GND21PVss Supplyvss3op61D17BCPU Data Bus [17]phbst88mA
62D16BCPU Data Bus [16]phbst88mA
63D15BCPU Data Bus [15]phbst88mA
64D14BCPU Data Bus [14]phbst88mA
65VDD3PVdd Supplyvdd2i66D13BCPU Data Bus [13]phbst88mA
67D12BCPU Data Bus [12]phbst88mA
68D11BCPU Data Bus [11]phbst88mA
69GND7PVss Supplyvss2i70D10BCPU Data Bus [10]phbst88mA
71D9BCPU Data Bus [9]phbst88mA
72D8BCPU Data Bus [8]phbst88mA
73D7BCPU Data Bus [7]phbst88mA
74GND22PVss Supplyvss3op75D6BCPU Data Bus [6]phbst88mA
76D5BCPU Data Bus [5]phbst88mA
77D4BCPU Data Bus [4]phbst88mA
78VDD12PVdd Supplyvdd3op79D3BCPU Data Bus [3]phbst88mA
80D2BCPU Data Bus [2]phbst88mA
81D1BCPU Data Bus [1]phbst88mA
82D0BCPU Data Bus [0]phbst88mA
83GND8PVss Supplyvss2i84TX_EN1OMotor Control Tx Enable 1phob44mA
85TX_EN2OMotor Control Tx Enable 2phob44mA
86TX_AOMotor Control Tx Channel Aphob44mA
87TX_BOMotor Control Tx Channel Bphob44mA
88GND23PVss Supplyvss3op-
99ADC_CLKOAFE ADC Clockphob88mA
100VDD13PVdd Supplyvdd3op101CDS2_CLKOAFE CDS2 Clockphob88mA
102SCLK1OAFE SIO Sync. Clockphob88mA
103SLOAD1OAFE SIO Read/Write Control Signalphob88mA
104VDD10PVdd Supplyvdd3op105SDO1OAFE SIO Serial Output 1phob88mA
106SDIO1BAFE SIO Serial Inout/Output 1phbst88mA
107SDIO2BAFE SIO Serial Inout/Output 2phbst88mA
108GND10PVss Supplyvss2i109AFE_D9IA/D Converted Data Bus [9]ptis110AFE_D8IA/D Converted Data Bus [8]ptis111AFE_D7IA/D Converted Data Bus [7]ptis112AFE_D6IA/D Converted Data Bus [6]ptis113VDD5PVdd Supplyvdd2i114AFE_D5IA/D Converted Data Bus [5]ptis115AFE_D4IA/D Converted Data Bus [4]ptis116AFE_D3IA/D Converted Data Bus [3]ptis117GND25PVss Supplyvss3op118AFE_D2IA/D Converted Data Bus [2]ptis119AFE_D1IA/D Converted Data Bus [1]ptis120AFE_D0IA/D Converted Data Bus [0]ptis121GND11PVss Supplyvss2i122SRAM_A15OSRAM Address Bus [15]phob88mA
123SRAM_A14OSRAM Address Bus [14]phob88mA
124SRAM_A13OSRAM Address Bus [13]phob88mA
125SRAM_A12OSRAM Address Bus [12]phob88mA
126VDD14PVdd Supplyvdd3op127SRAM_A11OSRAM Address Bus [11]phob88mA
128SRAM_A10OSRAM Address Bus [10]phob88mA
129SRAM_A9OSRAM Address Bus [9]phob88mA
130GND26PVss Supplyvss3op131SRAM_A8OSRAM Address Bus [9]phob88mA
132SRAM_A7OSRAM Address Bus [9]phob88mA
133SRAM_A6OSRAM Address Bus [9]phob88mA
Circuit Description
3-11
Circuit Description
NoPin NameI/ODescriptionPad TypeCurrent drive
134SRAM_A5OSRAM Address Bus [9]phob88mA
135GND12PVss Supplyvss2i136SRAM_A4OSRAM Address Bus [9]phob88mA
137SRAM_A3OSRAM Address Bus [9]phob88mA
138SRAM_A2OSRAM Address Bus [9]phob88mA
139SRAM_A1OSRAM Address Bus [9]phob88mA
140VDD6PVdd Supplyvdd2i141SRAM_A0OSRAM Address Bus [9]phob88mA
142SRAM_nWROSRAM Write Enable Signalphob88mA
143SRAM_D15BSRAM Data Bus [15]phbst88mA
144SRAM_D14BSRAM Data Bus [14]phbst88mA
145GND27PVss Supplyvss3op146SRAM_D13BSRAM Data Bus [13]phbst88mA
147SRAM_D12BSRAM Data Bus [12]phbst88mA
148SRAM_D11BSRAM Data Bus [11]phbst88mA
149GND13PVss Supplyvss2i150SRAM_D10BSRAM Data Bus [10]phbst88mA
151SRAM_D9BSRAM Data Bus [9]phbst88mA
152SRAM_D8BSRAM Data Bus [8]phbst88mA
153SRAM_D7BSRAM Data Bus [7]phbst88mA
154VDD15PVdd Supplyvdd3op155SRAM_D6BSRAM Data Bus [6]phbst88mA
156SRAM_D5BSRAM Data Bus [5]phbst88mA
157SRAM_D4BSRAM Data Bus [4]phbst88mA
158GND28PVss Supplyvss3op159SRAM_D3BSRAM Data Bus [3]phbst88mA
160SRAM_D2BSRAM Data Bus [2]phbst88mA
161SRAM_D1BSRAM Data Bus [1]phbst88mA
162SRAM_D0BSRAM Data Bus [0]phbst88mA
163GND14PVss Supplyvss2i164GPO7/PItg2OGeneral Purpose Output [7]phob88mA
165GPO6/RLEDOGeneral Purpose Output [6]phob88mA
166GPO5/GLEDOGeneral Purpose Output [5]phob88mA
167GPO4/BLEDOGeneral Purpose Output [4]phob88mA
168VDD7PVdd Supplyvdd2i169GPO3/PItg3OGeneral Purpose Output [3]phob88mA
170GPO2/PIshOGeneral Purpose Output [2]phob88mA
171GPO1/
EPROM PROGRAMMER or PROGRAMMING at the factory
DOWNLOAD from PC
3) OPERATING PRINCIPLE
When the RCSO(ROM CHIP SELECT)signal is activated from the CPU after the POWER is ON, it activates RD SIGNAL and reads the DATA(HIGH/LOW) stored in the FLASH MEMORY to control the over all system. The FLASH MEMORY may also write. When turning the power on, press and hold the key(power
switch) for 2 - 3 seconds, then the LED will scroll and the PROGRAM DOWNLOAD MODE will be activated.
In this mode, you can download the program through the parallel port.
AC CHARACTERISTICS
Read Status Data (last two cycles)
PA
Addresses
Program Command Sequence (last two cycles)
t
WC
555h
t
AS
PAPA
t
AH
CE#
OE#
t
WP
WE#
Data
RY/BY#
V
t
VCS
CC
t
CS
t
DS
t
DH
A0h
Notes:
1. PA = program address, PD = program data, D
2. Illustration shows device in word mode.
Figure 17. Program Operation Timings
CE#
WE#
BYTE
t
CH
t
WPH
PD
t
BUSY
is the true data at the program address.
OUT
The falling edge of the last WE# signal
t
SET
(tAS)
t
HOLD
t
WHWH1
(tAH)
Status
D
OUT
t
RB
Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 16. BYTE# Timings for Write Operations
3-14
3-2-5 DRAM CONTROL
1) DEVICE
Circuit Description
TYPE NO.
CAPACITY
2) OPERATING PRINCIPLE
DRAM can either read or write. The data can be stored in the DRAM only when the power is on. It stores
data white the CPU processes data. The address to read and write the data is specified by RAS SIGNAL
and CAS SIGNAL. DRAMWE*SIGNAL is activ ated when writing data and DRAMOE*SIGNAL, when reading. You can expand up to 64MBYTE of DRAM in this system.
Basically the Extended Data Out DRAM is similar to Fast Page Mode DRAM. For FPM, the data are v alid only
when the nCAS is active while reading the internal data, however, it has a latch that the data will be
continuously outputted even after the nCAS is inactivated.
While configuring the software, you must set the timing register of SFR considering the clock speed and the
DRAM spec.
*Note : 1. To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.
2. To interrupt burst wrige by Row precharge, both the write and the prechargebanks must be the
same.
3-17
Circuit Description
3-2-6 FS781 (FREQUENCY ATTENUATOR)
This system used FS741 for the main clock for EMI SUPPRESSION.
It spreads the source clock in a consistent bandwidth to disperse the energy gathered in order to attenuate
the energy.
The capacitor value of the loop filter(PIN 4) is set depending on the source clock used or the spread bandwidth. Refer to FS781 Spec. for detail.
3-2-7 USB (Universal Serial Bus)
NS’s USBN9602 is used as the interface IC and 48MHz clock is used.
When the data is received through the USB port, EIRQ1 SIGNAL is activated to send interrupt to CPU,
then it directly sends the data to DRAM by IOCS4*&DRAMA(11) SIGNAL through DRAMD (24;31).
3-2-8 SRAM : 1MByte SRAM K6F1008U2C
It stores a variety of option data.
3-2-9 FAX Transceiver
3-2-9-1. GENERAL
This circuit processes transmission signals of modem and between LIU and modem.
3-2-9-2. modem (u44)
FM336 is a single ship fax modem. It has functions of DTMF detection and DTMF signal production as well as
functioins of modem. TX A1, 2 is transmission output port and RX IN is received data input port. / POR signal
controlled by MFP controller (U3:ARM946ES) can initialize modem (/M_RST) without turning off the system.
D0-D7 are 8-bit data buses. RS0-RS4 signals to select the register in modem chips. /RS and /WR signals control READ and WRITE respectively. /IRQ is a signal for modem interrupt.
Transmission speed of FM336 is supported up to 33.6k.
The modem is connected to LINE through transformer directly.
3-18
< FAX TRANSCEIVER >
Circuit Description
3-3 Scanner
3-3-1 SUMMARY
This flat-bed type device to read manuscripts has 600dpi CCD as an image sensor. There is one optical sensor for detecting CCD home position and Scan-end position. The home position is detected by a optical sensor which is attached to the CCD Module. The Scan-end position is calculated by numer of motor step.
CCD
Charge Coupled Device improves productivity and allows a compact design.
(Shading correction, Gamma correction, Enlargement/Reducement, and Binarization)
Shading Correction
(1) White shading correction support for each R/G/B
(2) White shading data memory : 3x8Kx12bits = 288Kbits 384Kbits (external)
(3) Black shading data memory : 3x8Kx12bits = 288Kbits 384Kbits (external)
Gamma Correction
(1) Independent Gamma table for each RGB component
(2) Gamma table data memory : 3x1Kx8bits = 24Kbits (internal)
Binarization (mono)
(1) 256 Gray’s halftone representation for Photo document : 3x5 EDF(Error DifFusion) method proposed by
Stucki.
(2) LAT(Local Adaptive Thresholding) for Text document :
36 General Purpose Input/Output : 8(GPO), 28(GPIO)
Black/White reversion, and Image Mirroring support
DATA MEMORY
CPU
SPGPm
ADD R- BUSADDR- BUS
DAT A- BUS
ADDR BU S
DATA BUS
Scan/Motor
Driver
DATA- BUS
DMA Controller
(SPGPm
CLK_LINE
CLK_PIX
LINE_PERIOD
IW IN
ADC_CLK
CDS2_CLK
AFE Contro l
Signal
PI_TG
PI1 , PI2
Tx_A, Tx_B,
nTx_A, nTx_B
)
T
T
R
R
D
D
M
M
A
A
_
_
R
A
E
C
Q
K
1M bit
SRAM
Image
Processor
AFE
12b i t A DC
12bit (R/ G/ B)
Analog Sign al
Scanner
CIP4
DOCUMENT IMAGE
<External interfce with CIP4>
3-21
Circuit Description
AIN
ADC_REF T
12-bit
A
/D converter
AFE_CIP4
1024x8
(R/G/B)
8192x8
ADC_REFB
SRAM
SRAM
( 2line)
PI_TG
PI1
Sensor
Interface
Gamma
Correctio n
Enlargemen t
/Reduct ion
PI2
Shadi ng
Correction
EXT SRAM
Shading
Acquisition
Imag e
Proces sing
Module
Vertical
Decimation
SRAM_A[ 15:0]
SRAM_D[15:0]
SRAM_nRD
SRAM_nWR
SRAM
256x8
SRAM
4096x16
(2 line)
IRQ
Int errupt
Control
CPU I/F
Module
Vp eak
Control
DMA
CIP4
Interface
Register
A[5:0]D[15:0]nCSnRD nWRnXDREQnXDACK
<Block diagram of CIP4>
Motor
Con trol
SRAM
1024x8
TX_A, B
nTX_ A, B
TX_EN1, EN2
3-22
Circuit Description
3-4 HOST INTERFACE:
Referred to IEEE 1284 standard.
3-4-1. Host Interface
PARALLEL PORT INTERFACE PART ARM946ES has the Parallel Port Interface Part that enables Parallel
Interface with PC. This part is connected to PC through Centronics connector. It generates major control
signals that are used to actuate parallel communication. It is comprised of/ERROR, PE, BUSY, /ACK,
SLCT, /INIT, /SLCTIN, /AUTOFD and /STB. This part and the PC data transmission method support the
method specified in IEEE P1283 Parallel Port Standard (http://www.fapo.com/ieee1284.html). In other
words, it supports both compatibility mode (basic print data transmitting method), the nibble mode
(4bit data; supports data uploading to PC) and ECP (enhanced capabilities port: 8bits data - high speed
two-way data transmission with PC). Compatibility mode is generally referred to as the Centronics mode
and this is the protocol used by most PC to transmit data to the printer. ECP mode is an improved protocol for the communication between PC and peripherals such as printer and scanner, and it provides
high speed two-way data communication. ECP mode provides two cycles in the two-way data transmission; data cycle and command cycle. The command cycle has two formats; Run-Length Count and Channel Addressing. RLE (Run-Length Count) has high compression rate (64x) and it allows real-time data
compression that it is useful for the printer and scanner that need to transmit large raster image that has a
series of same data. Channel Addressing was designed to address multiple devices with single structure. For example, like this system, when the fax/printer/scanner have one structure, the parallel port can be
used for other purposes while the printer image is being processed.This system uses RLE for high speed
data transmission. PC control signals and data send/receive tasks such as PC data printing, high speed
uploading of scanned data to PC, upload/download of the fax data to send or receive and monitoring the system control signal and overall system from PC are all processed through this part.
PPD(7: 0)
BUSY
nSTROBE
nAC
K
DATA
<Compatibility Hardware Handshaking Timing>
3-23
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