SAMSUNG SLSNNWW815TS Technical data

ISSUE NO :

Rev:

00008083789

DATE OF ISSUE :

SPECIFICATION

MODEL : SLSNNWW815TS

WARM WHITE TOP VIEW

CUSTOMER :

2007. 12. 10

CUSTOMER :

DRAWN CHECKED APPROVED

SAMSUNG ELECTRO-MECHANICS

DRAWN CHECKED APPROVED

SAMSUNG ELECTRO-MECHANICS

SAMSUNG ELECTRO-MECHANICS CO,.LTD.

314. MAETAN3-DONG, YEONGTONG-KU,

SUWON-SI,GYUNGKI-DO,KOREA,442-743

PAGE 1/18

Contents

1. Product outline-------------------- 3

2. Absolute Maximum Rating------------ 3

3. Characteristics ------------------- 3

4. Chromaticity Diagram -------------- 4

5. Typical Characteristic Graph ---------- 5

6. Outline Drawing and Dimension ------- 6

7. Reliability Test Items and Conditions --- 7

8. Solder Conditions ------------------ 8

9. Taping Dimension ------------------ 9

10. Label Structure ------------------- 10

11. Lot Number ---------------------- 10

12. Reel Packing Structure ------------- 11

13. Aluminum Vinyl Bag----------------- 12

14. Precaution for Use ----------------- 13

15. Hazard Substance Analysis------------15

16. Revision History ------------------- 18

SAMSUNG ELECTRO-MECHANICS

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1. Product Outline

1) Feature
. Lead Frame Type LED Package ( 5.2 * 6.0 * t 1.3mm )

0

.BeamAngle(△θ:120
.AlGaInP,GaN/Al

Chip&LongTimeReliability

2O3

)

2) Applications
. Indoor, Outdoor Display and etc.

2. Absolute Maximum Rating

1). Operation Forward Current Per Chip............ 30 ㎃

2). Peak Pulsed Forward Current Per Chip....... 100 ㎃

(Duty 1/10 Pulse Width 10msec)

3). Reverse Current......................................... 85 ㎃

4). Operating Temperature Range ( T

5). Storage Temperature Range ( T

) ........ -30℃ ∼ 85℃

opr

) ........... -40℃ ∼100℃

stg

3. Characteristics

Electrical properties

Item Symbol Conditions Rank Min. Typ. Max. Unit

Forward

Voltage (

*)

V

IF=60㎃ S 2.9 - 3.6 V

F

Reverse

Voltage(**)

V

r

IR=10㎃ - 0.6 - 2.0 V

Chromaticity Coordinate

Item Condition Rank x y

0.3235 0.3545 0.3610 0.3165 0.3080 0.3408 0.3850 0.3480

M

0.3545 0.3822 0.3988 0.3610 0.3408 0.3580 0.4116 0.3850

Chromaticity

T

IF=

Coordinate

S

0.3822 0.4129 0.4390 0.3988 0.3580 0.3725 0.4310 0.4116

U

60mA

(*)

0.4129 0.4355 0.4588 0.4970 0.3725 0.3785 0.3838 0.4466

V

0.4680 0.4390 0.4255 - 0.4385 0.4310 0.4000 -

Luminous Intensity

Item Symbol Conditions Rank Min. Typ. Max. Unit

Luminous

Intensity (

*)

I

V

IF=60㎃ S 4 - 6.8 cd

(Ta:25OC)

(Ta:25OC)

(Ta:25OC)

*Tolerance: VF:±0.1, IV:±5%, x,y:±0.01
* Luminous intensity measuring equipment : CAS140 B
** Value for one LED device.

SAMSUNG ELECTRO-MECHANICS

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4. Chromaticity Diagram

0.9

520

0.8
510

y

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

500

490

470

450

550

M

T

U

570

V

590

610

700

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

SAMSUNG ELECTRO-MECHANICS

x

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5. Typical Characteristics Graph

s

* These graphs show typical values.

Relative Luminous Intensity vs.

Forw ard Current

Forward Current(mA)

Forward Current Derating Curve

Forward Current

1000

100

10

Intensity(%)

Relative Luminou

1

110100

100

80

60

IF(mA)

40

20

Forward Current vs.

100

10

IF(mA)

Forward Current

1

2.5 2.7 2.9 3.1 3.3 3.5

100

80

60

40

Intensity(%)

20

Relative Emission

Forw ard Voltage

Forward V oltage VF(V )

Spectrum Distribution

(Ta:25OC)

I

=60㎃

F

T

=R.T

a

20

10

0

0

0 20 40 60 80 100

Ambient Temp(deg)

Radiation Diagram

90

80

70

60

50

40

30

402020406080100 8060 1000

30

40

50

60

70

80

Relative Luminous Intensity(%)

0

400 500 600 700 800

Wav e Len gth (n m)

Y

X

20

10

0

SAMSUNG ELECTRO-MECHANICS

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6. LED Package Outline Dimensions

Common Cathode

Anode

Cathode

Circuit Diagram

Land Pattern

⑥

④

③

NUMBER ITEM MATERIAL

① FRAME Copper Frame(Silver Plated)

②LEDCHIP GaN/Al

③ Zener Diode Si

④WIRE GoldWire

⑤ RESIN Resin

⑥ PACKAGE Heat-resistant Polymer

2O3

⑤

②

①

SAMSUNG ELECTRO-MECHANICS

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