SAMSUNG S5T3170 User Manual

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LOW POWER DTMF RECEIVER S5T3170
INTRODUCTION
The S5T3170 is a complete Dual Tone Multiple Frequency (DTMF) receiver that is fabricated by low power CMOS and the Switched­Capacitor Filter technology. This LSI consists of band split filters, which separates counting section which verifies the frequency and duration of the received tones before passing the corresponding code to the output bus. It decodes all 16 DTMF tone pairs into a 4bits digital code. The externally required components are minimized by on chip provision of a differential input AMP, clock oscillator and latched three state interface. The on chip clock generator requires only a low cost TV crystal as an external component.
FEATURES
Detects all 16 standard tones.
Low power consumption: 15mW (Typ)
Single power supply: 5V
Uses inexpensive 3.58MHz crystal
Three state outputs for microprocessor interface
Good quality and performance for using in exchange system
18DIP300A
20SOP375
Power down mode/input inhibit
ORDERING INFORMATION
Device Package Operating
S5T3170X01-D0B0 18DIP300A S5T3170X01-S0B0 20SOP375
25°C — + 75°C
APPLICATIONS
• PABX • Key Phone System
• Central Office • Answering Phone
• Paging Systems • Home Automation System
• Remote Control • Mobile Radio
• Credit Card Systems • Remote Data Entry
1
S5T3170 LOW POWER DTMF RECEIVER
PIN CONFIGURATION
IN+
IN-
GS
V
REF
PDN
OSC1
OSC2
GND
1
2
3
4
I
IN
5
S5T3170
6
7
8
9 10
(18-DIP)
18
17
16
15
14
13
12
11
V
DD
SI/GTO
ESO
DSO
Q4
Q3
Q2
Q1
OE
IN+
IN-
GS
V
REF
PDN
NC
OSC1
OSC2
GND
1
2
3
4
I
IN
5
S5T3170
6
7
8
9 12
10
(20-SOP)
20
19
18
17
16
15
14
13
11
V
DD
SI/GTO
ESO
DSO
NC
Q4
Q3
Q2
Q1
OE
PIN DESCRIPTION
Pin No Symbol Description
1 IN + Non inverting input of the internal amp. 2 IN Inverting input of the internal amp. 3 GS Gain Select.
The output used for gain adjustment of analog input signal with a feedback resistor.
4 V
5 I
REF
IN
6 PDN Control input for the stand-by power down mode.
Reference Voltage output (VDD/2, Typ) can be used to bias the internal amp input of VDD/2.
Input inhibit. High input states inhibits the detection of tones. This pin is pulled down internally.
Power down occurs when the signal on this input is in high states. This pin is pulled down internally.
2
LOW POWER DTMF RECEIVER S5T3170
PIN DESCRIPTION (Continued)
Pin No Symbol Description
7, 8 OSC1
OSC2
Clock input/output. A inexpensive 3.579545MHz crystal connected between these pins completes internal oscillator. Also, external clock can be used.
9 GND Ground pin.
10 OE Output Enable input.
Outputs Q1-Q4 are CMOS push-pull when OE is High and open circuited (High impedance) when disabled by pulling OE low. Internal pull up resistor built in.
11 - 14 Q1 - Q4 Three state data output.
When enabled by OE, these digital outputs provide the hexadecimal code corresponding to the last valid tone pair received.
15 DSO Delayed Steering Output.
Indicates that valid frequencies have been present for the required guard time, thus constituting a valid signal. Presents a logic high when a received tone pair has been registered and the output latch is updated. Returns to logic low when the voltage on SI/GTO falls below VTH.
16 ESO Early Steering Outputs.
Indicates detection of valid tone output a logic high immediately when the digital algorithm detects a recognizable tone pair. Any momentary loss of signal condition will cause ESO to return to low.
17 SI/GTO Steering Input/Guard Time Output.
A voltage greater the V
detected at SI causes the device to register the detected
TS
tone pair and update the output latch. A voltage less than VTS frees the device to accept a new tone pair. The GTO output acts to reset the external steering time
constant, and its state is a function of ESO and the voltage on SI
18 V
DD
Power Supply (+5V, Typ)
ABSOLUTE MAXIMUM RATINGS
Characteristics Symbol Value Unit
Power Supply Voltage V Analog Input Voltage Range V Digital Input Voltage Range V Output Voltage Range V Current On Any Pin I Operating Temperature T Storage Temperature T
DD I (A) I (D)
O
I OPR STG
6 V
0.3 — VDD + 0.3 V
0.3 — VDD + 0.3 V
0.3 — VDD + 0.3 V
10 V
40 — + 85 mA
60 — + 150 °C
3
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