Samsung MZWLJ3T8HBLS-00007 User Manual

Samsung PM1733

NVMe SSD

A New Generation of Flash Technology

Product Brief

WELCOME TO A NEW ERA OF PERFORMANCE AND RELIABILITY

Maximize your data transmission and data integrity with Samsung’s highly reliable, high-performance PM1733 SSD

Enterprise environments have unique requirements to ensure their storage hardware operates optimally 24/7, 365 days a year. Varied levels of performance with low latency is essential. It is also critical that these environments remain stable when processing countless read and write workloads. The most crucial criteria of all is protection from data corruption or loss due to unexpected power outages. Considering each of these factors, IT and data center managers are tasked with finding high performing and extremely dependable memory solutions.

For the first time, Samsung is introducing three new technologies on a single solid state drive

- the PM1733. Samsung's SSD virtualization allows each PM1733 to be divided into 64 separate virtual drives. V-NAND® Machine Learning enables the SSD to accurately predict

and verify cell characteristics, as well as detect any variations in circuit patterns.

Furthermore, the drive features revolutionary "fail-in-place" (FIP) technology, which allows Highlights the PM1733 to identify failing NAND cells, and actually recover then relocate the data without

interrupting normal operations or impacting performance. The PM1733 is the first of a new class of "never-die" SSDs - brought to you only by Samsung, the leader in flash technology.

Samsung PM1733 delivers:

•Extreme performance Featuring support for PCIe Gen 4, the PM1733 delivers up to 7GB/s Sequential and 1.5M IOPS Random Read speeds, making it the highest performing SSD ever.

•Revolutionary Reliability

Samsung's new Fail-in-Place ® technology coupled with V-NAND Machine Learning gives the PM1733 unmatched durability.*

•Unmatched Flexibility

The PM1733 supports a range of capacities, from 1.6TB to an industry leading 15.36TB. In addition, each PM1733 can be virtually provisioned, offering up to 64 separate virtual drives.

Samsung PM1733 Performance: PCIe Gen 4 vs PCIe Gen 3

Random 4kB Performance		Read		Write

PM1733 2.5" PCIe Gen 4

PM1725b 2.5" PCIe Gen 3

Sequential Performance		Read		Write

PM1733 2.5" PCIe Gen 4

PM1725b 2.5" PCIe Gen 3

The NVMe advantage

The NVMe protocol was built from the ground up to maximize flash storage performance and minimize latency. PM1733 offers 40% and 60% improvements in latency over SSDs using SAS and SATA protocols.

Physical and Digital Flexibility to fit your needs

The PM1733 supports PCIe Gen 3 and PCIe Gen 4, and is available in several capacities. In addition, its firmware can be modified by the user to exchange some drive capacity for additional endurance. These features provide you with the flexibility to bring top-tier performance and reliability to a variety of architectures and environments.

The PM1733 is configured as capacity-optimized, providing 1 DWPD at 1.92TB, 3.84TB, 7.68TB, and 15.36TB. Alternatively, it can be reconfigured for endurance and performance optimization, with 3 DWPD at 1.6TB, 3.2TB, 6.4TB and 12.8TB. The capacity-optimized version is most popular when utilizing dual port functionality in all-flash-array applications.

Samsung PM1733 NVMe SSD

Enterprise-grade power lossprotection

GET THE MOST FROM YOUR FLASH

During normal power-off periods, the host server allocates time to preserve data integrity by transmitting a standby command to each storage device. In the event of an unexpected power loss, though, the cached data in a device’s internal buffers (DRAM) can be lost. This can occur with unexpected power outages, or when users unplug devices from the system. However, the Samsung PM1733 SSD has been designed to prevent data loss resulting from unexpected power shutdowns with its power-loss protection architecture. Upon detection of a failure, the SSD immediately uses the stored energy from tantalum capacitors to provide enoughtimetotransferthe cached data in DRAMtothe flash memory, ensuring no loss of data.

Delivering highly optimized performance for various data center applications

The Samsung PM1733 SSD is optimized to excel in virtually any data center scenario. This enterprise-level, ultra-high performance SSD provides exceptional random read speeds and is particularly suitable for read-intensive data center applications.

Delivering Dual-Port NVMe to the Enterprise

PM1733 supports dual-port functionality, enabling highavailability via two access paths to the storage array controller. This delivers the reliability, availability and serviceability (RAS) that is required for enterprise storage, allowing SAS SSDs to be replaced by high-performance NVMe SSDs in all-flash-array architectures.

•Samsung’s SSD virtualization technology allows a single SSD to be subdivided into a maximum of 64 smaller SSDs, providing independent virtual workspaces. It also enables SSDs to take on certain tasks typically carried out by the server CPUs, such as SingleRoot I/O Virtualization (SR-IOV), requiring fewer server CPUs and SSDs. This significantly reduces the server footprint, for enhanced overall IT efficiency.

•V-NAND® Machine Learning, a new functionality available only on the Samsung PM1733, helps the SSD to accurately predict and verify cell characteristics, as well as detect any variation among circuit patterns through big data analytics. This capability allows the PM1733 to offer the superior data reliability, greater performance, and more efficient use of capacity needed in server and data center storage systems.

Additional Available Features

•Fail-In-Place technology: Ensures the SSD operates normally even when errors occur at the chip level.

•Zoned Namespace: PM1733 is capable of supporting ZNS implementations

•FIPS compliance: PM1733 can be FIPS certified to satisfy government requirements.

Samsung PM1733 specifications

Form factor	U.2 / 2.5"
Capacity	1.92 TB, 3.84 TB, 7.68TB, and 15.36TB
Host interface	PCIe Gen 3/4 x4
Spec Compliance	NVMe spec rev. 1.3
	PCIExpressbasespecificationrev.4.0
NANDflashmemory	Samsung V-NAND®
Power consumption (Active/Idle)	20W/8.5W
Uncorrectable Bit Error Rate (UBER)	1 sector per10^17 bits read
Mean Time Between Failure (MTBF)	2,000,000hours
Endurance	1 DWPD for 5 years
Sequential read	Gen 3: 3,500 MB/s, Gen 4: 7,000 MB/s
Sequential write	Gen3: 3,200MB/s, Gen4: 3,500 MB/s
Random read	Gen 3: 800K IOPS, Gen 4: 1.5M IOPS
Random write	Gen 3 & 4: Up to 135,000 IOPS
PhysicalDimensions	69 x 100 x 15 mm
Encryption Supported	TCG Opal 2.0
Manageability	NVMe-MI 1.0a compliant
Bytes per sector	512, 520, 4096, 4104, 4160 Bytes
Operating Temperature	0 - 70o C

*Additional features require custom firmware implemention. Details available from your Samsung representative.

©Copyright 2020 Samsung Electronics, Co. Ltd. All Rights Reserved. V-NAND is a registered trademark of Samsung Electronics, Co. Ltd. All brand, product, service names and logos are trademarks and/or registered trademarks of their respective owners and are hereby recognized and acknowledged. Specifications and designs are subject to change without notice. All data were deemed correct at time of creation. Samsung is not liable for errors or omissions.