SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or otherwise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
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For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
ⓒ 2018 Samsung Electronics Co., Ltd. All rights reserved.
IF THERE IS ANY OTHER OPERATION TO IMPLEMENT IN ADDITION TO SPECIFICATION
IN THE DATASHEET OR JEDEC STANDARD, PLEASE CONTACT EACH BRANCH OFFICE OR
HEADQUARTERS OF SAMSUNG ELECTRONICS.
- Random Read (7.68TB) Up to TBDK IOPS
(3.84/1.92TB) Up to 540K IOPS
(960GB) Up to 400K IOPS
- Random Write (7.68TB) Up to TBDK IOPS
(3.84/1.92TB) Up to 50K IOPS
(960GB) Up to 40K IOPS
· Latency (Sustained workload)
- Random Read/ Write (typical)
(3.84/1.92TB/960GB) 85/50 us
- Sequential Read/ Write (typical)
(3.84/1.92TB/960GB)15/15 us
- Drive Ready Time (typical) (7.68TB) TBD s
(3.84/1.92TB/960GB) 10 s
2)
4
(7.68TB) TBD us
5
(7.68TB) TBD us
RELIABILITY SPECIFICA TIONS
· Uncorrectable Bit Error Rate 1 sector per 10
· MTBF 2,000,000 hours
· Component Design Life 3 years
· Endurance
- 3.84/1.92TB/960GB 1.3 DWPD
· TBW (@4KB Random Write)
- 3.84TB 5466 TB
- 1.92TB 2733 TB
- 960GB 1366 TB
· Data Retention 3 months
17
ENVIRONMENTAL SPECIFICATIONS
· Temperature, Case (Tc6)
- Operating 0 ~ 70 °C
- Non-operating -40 ~ 85 °C
· Humidity (non-condensing) 5 ~ 95%
· Linear Shock (0.5ms duration with 1/2 sine wave)
- Non-operating 1,500 G
· Vibration
- Non-operating (10 ~ 2,000 Hz, Sinusoidal) 20 G
3
POWER REQUIREMENTS
3
· Supply Voltage / Tolerance 12V±8%
3
3
3
7
· Active
· Idle (typ.) 4.0 W
(max. RMS) 10.6 W
PHYSICAL DIMENSION
· Width 69.85 ± 0.25 mm
· Length 100.20 ± 0.25 mm
· Height 6.80 ± 0.20 mmT
· Weight Up to 70 g
OPERATING SYSTEMS
Windows Server 2012R2/2016
RHEL 6.6/7.2
CentOS 6.7/7.3
Ubuntu 14.10/15.10
SLES 11SP3/12
Oracle Linux 6.6/7.2
NOTE: Specifications are subject to change without notice.
__________________________________
1) 1MB = 1,000,000 Bytes, 1GB = 1,000,000,000 Bytes, unformatted Capacity. User
accessible capacity may vary depending on operating environment and formatting.
2) Based on PCI Express Gen3 x4, Random performance measured using FIO 2.1.3
in Linux RHEL 6.6(Kernel 3.14.29) with 4KB (4,096 bytes) of data transfer size in
queue depth 32 by 4 workers and Sequential performance with 128KB (131,072
bytes) of data transfer size in queue depth 32 by 1 worker. Actual performance may
vary depending on use conditions and environment.
3) 1 MB/sec = 1,000,000 bytes/sec was used in sequential performance.
4) The random latency is measured by using FIO 2.1.3 in Linux RHEL 6.6(Kernel
3.14.29) and 4KB (4,096 bytes) transfer size with queue depth 1 by 1 worker.
5) The Sequential latency is measured by using FIO 2.1.3 in Linux RHEL 6.6(Kernel
3.14.29) and 4KB (4,096 bytes) transfer size with queue depth 1 by 1 worker.
6) Tc is measured at the hottest point on the case. Sufficient airflow is recommended
to be operated properly on heavier workloads wthin device operating temperature.
7) Active power is measured using IOMeter2006 on Windows Server 2012.
bits read
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HEADQUARTERS OF SAMSUNG ELECTRONICS.
1.1 General Description................................................................................................................................................. 5
2.4 Quality of Service (QoS).......................................................................................................................................... 7
2.5 Power ...................................................................................................................................................................... 7
2.5.1 Maximum Voltage Ratings (12V) ...................................................................................................................... 7
2.5.2 Power Consumption (12V) ................................................................................................................................ 7
2.5.3 Inrush Current ................................................................................................................................................... 7
2.5.4 Power Loss Protection ...................................................................................................................................... 8
2.6.1 Mean Time Between Failures ........................................................................................................................... 8
2.6.2 Uncorrectable Bit Error Rate ............................................................................................................................. 8
2.6.3 Data Retention .................................................................................................................................................. 8
3.1 Physical Information ................................................................................................................................................ 10
5.1.8 Device Serial Number Capability Register ........................................................................................................ 28
5.1.9 Power Budgeting Extended Capability ......................................................................................
6.0 Supported Command Set ...........................................................................................................................................35
6.1 Admin Command Set .............................................................................................................................................. 35
7.0 SPOR Specification (Sudden Power Off and Recovery) ............................................................................................44
7.1 Data Recovery in Sudden Power off ....................................................................................................................... 44
7.2 Time to Ready Sequence ........................................................................................................................................ 44
8.2.3 Event Temperature, Critical Temperature Trip register ....................................................................................48
........................ 29
Rev. 1.0
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MZQLB960HAJR-00007
SAMSUNG CONFIDENTIAL
MZQLB1T9HAJR-00007
MZQLB3T8HALS-00007
MZQLB7T6HMLA-00007
8.2.4 Ambient Temperature Register ......................................................................................................................... 48
8.2.5 Manufacture ID Register ................................................................................................................................... 49
9.0 UEFI EXPANSION ROM ............................................................................................................................................50
9.1.1 General Features .............................................................................................................................................. 50
9.2 Supported Operating Systems ................................................................................................................................ 50
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MZQLB960HAJR-00007
M Z X X X X X X X X X X - X X X X X
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
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datasheet
SAMSUNG CONFIDENTIAL
Rev. 1.0
NVMe PCIe SSD
1.0 Introduction
1.1 General Description
This document describes the specifications of the Samsung SSD PM983, which is a native-PCIe SSD for enterprise application.
The Samsung SSD PM983 presents outstanding performance with instant responsiveness to the host system, by applying the Peripheral Component
Interconnect Express (PCIe) 3.0 interface standard, as well as highly efficient Non-Volatile Memory Express (NVMe) Protocol.
The Samsung SSD PM983 delivers wide bandwidth of up to 3,000MB/s for sequential read speed and up to 1,900MB/s for sequential write speed under
up to 10.6W power. With the help of Toggle 2.0 NAND Flash interface, the Samsung SSD PM983 delivers random performance of up to 540KIOPS for
random 4KB read and up to 50KIOPS for random 4KB write in the sustained state.
By combining the enhanced reliability Samsung NAND Flash memory silicon with NAND Flash management technologies, the Samsung SSD PM983
delivers the extended endurance of up to 1.3 drive writes per day over 3 years, which is suitable for enterprise applications, in 2.5" form factor lineups:
960GB, 1.92TB, 3.84TB and 7.68TB.
In addition, the Samsung SSD PM983 supports Power Loss Protection (PLP). PLP solution can guarantee that data issued by the host system are written
to the storage media without any loss in the event of sudden power off or sudden power failure.
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2) Capacity shown in Table 1 represents the total usable capacity of the SSD which may be less than the total physical capacity. A certain area in physical capacity,
not in the area shown to the user, might be used for the purpose of NAND flash management.
3) Max. LBA shown in Table 1 represents the total user addressable sectors in LBA mode and calculated by IDEMA rule.
2)
960GB1,875,385,008
1.92TB3,750,748,848
3.84TB7,501,476,528
7.68TB15,002,931,888
Max LBA
2.2 Performance
[Table 3] Sustained Random Read/Write Performance (IOPS)
Maximum Performance
Random 4KB Read (Up to)IOPS400K540K540KTBD
Random 4KB Write (Up to)IOPS40K50K50KTBD
NOTE:
1) Random performance in Table 3 was measured by using FIO 2.1.3 in Linux RHEL 6.5 with 4KB (4,096 bytes) of data transfer size in Queue Depth=32 by 4 workers.
Measurements were performed on a full Logical Block Address (LBA) span of the drive in sustained state. The actual performance may vary depending on use conditions
and environment.
[Table 4] Sequential Read/Write Performance
Maximum Performance
Sequential 128KB Read (Up to)
Sequential 128KB Write (Up to)
NOTE:
1)Sequential performance in Table 4 was measured by using FIO 2.1.3 in Linux RHEL 6.5 with 128KB (131,072 bytes) of data transfer size in Queue Depth=32 by 1 worker.
1)
1)
Unit960GB1.92TB3.84TB7.68TB
Unit960GB1.92TB3.84TB7.68TB
MB/s
MB/s
3,0003,0003,000TBD
1,0501,9001,900TBD
3)
[Table 5] IOPS Consistency
Maximum Performance
Random Read (4 KB)99%99%99%TBD
Random Write (4 KB)96%95%97%TBD
NOTE:
1) IOPS consistency measured using FIO with queue depth 32.
2) The random latency is measured by using FIO 2.1.3 in Linux RHEL 7.0(Kernel 3.10.0) and 4KB transfer size with queue depth 1 by 1 worker.
3) The sequential latency is measured by using FIO 2.1.3 in Linux RHEL 7.0(Kernel 3.10.0) and 4KB transfer size with queue depth 1 by 1 worker.
4) The maximum taking time to be ready for receiving commands after power-up (CSTS.Ready=1). It is expected that I/O commands may not be completed at this point.
2
3
4
us85 / 5085 / 5085 / 50TBD
us15 / 1515 / 1515 / 15TBD
sec101010TBD
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1. QoS is measured using Fio 2.1.3 (99 and 99.99%) in Linux RHEL 7.0(Kernel 3.10.0) with queue depth 1, 32 on 4KB random read and write.
2. QoS is measured as the maximum round-trip time taken for 99 and 99.99% of commands to host.
2.5 Power
The Samsung SSD PM983 is implemented in standardized 2.5" form factor and gets primary 12V power t from the host system.
For 12V, the allowable voltage tolerance and noise level in SSD are described in chapter 2.4.1, the power consumption in 2.4.2 and the inrush current in
2.4.3.
2.5.1 Maximum Voltage Ratings (12V)
[Table 8] Allowable Voltage Tolerance
Operating Voltage960GB1.92TB3.84TB7.68TB
Allowable Voltage12V±8%
Allowable noise/ripple
NOTE:
1) The components inside SSD were designed to endure the range of voltage fluctuations, which might be induced by the host system, in Table 6.
1
DC to 100Khz : 960 mVp-p Max
100Khz to 20Mhz : 150 mVp-p Max
2.5.2 Power Consumption (12V)
In enterprise server and storage system, the Samsung SSD PM983 is designed for the specific usage, which means that SSD will be always operated by
the host system during the entire life. Hence, the Samsung SSD PM983 does not manage any low power modes except for the Active/Idle and Off mode.
[Table 9] Power Consumption (12V Supply Voltage)
Power Mode960GB1.92TB3.84TB7.68TB
2
Active
3
Idle
Off0W0W0W0W
NOTE:
1) Power consumption was measured in the 12V power pins of the connector plug in SSD. The active and idle power is defined as the highest averaged
power value, which is the maximum RMS average value over 100 ms duration.
2) The measurement condition for active power is assumed for 100% sequential read and write.
3) The idle state is defined as the state that the host system can issue any commands into SSD at any time.
Read8.6W8.7W8.7WTBD
Write8.1W10.6W10.6WTBD
1
4.0W4.0W4.0WTBD
2.5.3 Inrush Current
[Table 10] Inrush Current
Inrush Current960GB1.92TB3.84TB7.68TB
12V
NOTE:
1) The measurement value of inrush current is also compatible with the standard specification of “Enterprise SSD Form Factor Version 1.0a” released by SSD Form Factor
Working Group
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By using internal back-up power technology, the Samsung SSD PM983 supports power loss protection (PLP) feature to guarantee the reliability of data
requested by the host system. When power is unpredictably lost, SSD can detect automatically this abnormal situation and transfer all user data and
meta-data cached in DRAM into the Flash media during any SSD operations.
2.6 Reliability
The reliability specification of the Samsung SSD PM983 follows JEDEC standard, which are included in JESD218A and JESD219A documents
2.6.1 Mean Time Between Failures
By definition, Mean Time between Failures (MTBF) is the estimated time between failures occurring during SSD operation.
[Table 11] MTBF Specifications
Parameter960GB1.92TB3.84TB7.68TB(target)
MTBF2,000,000 Hours
2.6.2 Uncorrectable Bit Error Rate
By definition, Uncorrectable Bit Error Rate (UBER) is a metric for the rate of occurrence of data errors, equal to the number of data errors per bits read as
specified in the JESD218 document of JEDEC standard.
[Table 12] UBER Specifications
Parameter960GB1.92TB3.84TB7.68TB(target)
UBER
1 sector per 10
17
bits read
2.6.3 Data Retention
By definition, data retention is the expected time period for retaining data in the SSD at the maximum rated endurance in power-off state as specified in
the JESD218 document of JEDEC standard.
[Table 13] Data Retention
Parameter960GB1.92TB3.84TB7.68TB(target)
Data Retention
NOTE:
1) Data retention was measured by assuming that SSD reaches the maximum rated endurance at 40C in power-off state.
1
3 months
2.6.4 Endurance
By definition, the endurance of SSD in enterprise application is defined as the maximum number of drive writes per day that can meet the requirements
specified in the JESD218 document of JEDEC standard.
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1) Tc is measured at the hottest point on the case. Sufficient airflow is recommended to be operated properly on heavier workloads wthin device operating temperature.
1
2.7.2 Humidity
[Table 17] Humidity
Parameter960GB1.92TB3.84TB7.68TB
Humidity
NOTE:
1) Humidity is measured in non-condensing state.
1
Operating0 to 70°C
Non-operating-40 to 85°C
Non-operating5% to 95%
2.7.3 Shock and Vibration
[Table 18] Shock and Vibration
Parameter960GB1.92TB3.84TB7.68TB
1
Shock
Vibration
NOTE:
1) Test condition for shock: 0.5ms duration with half sine wave.
2) Test condition for vibration: 10Hz to 2000Hz.
2
Non-operating1,500 G
Non-operating20 G
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The physical case of the Samsung SSD PM983 in 2.5 form factor follows the standardized dimensions defined by SSD Form Factor Work Group.
[Table 19] Physical Dimensions and Weight
ParameterUnit960GB1.92TB3.84TB7.68TB
Widthmm69.85 ± 0.25
Lengthmm100.20 ± 0.25
Thicknessmm6.80 ± 0.20
WeightgUp to 70g
Rev. 1.0
Figure 1. Mechanical Outline
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MZQLB960HAJR-00007
SAMSUNG CONFIDENTIAL
MZQLB1T9HAJR-00007
MZQLB3T8HALS-00007
MZQLB7T6HMLA-00007
datasheet
NVMe PCIe SSD
5.0 PCI and NVM Express Registers
5.1 PCI Express Registers
5.1.1 PCI Register Summary
[Table 21] PCI Register Summary
Start AddressEnd AddressNameType
00h3FhPCI HeaderPCI Capability
40h47hPCI Power Management CapabilityPCI Capability
MLBAR (BAR0)Memory Register Base Address (lower 32-bit)
MUBAR (BAR1)Memory Register Base Address (upper 32-bit)
IDBAR (BAR2)Index/Data Pair Register Base Address
BAR3Reserved
BAR4Reserved
BAR5Reserved
CCPTRCardBus CIS Pointer
SSSubsystem Identifiers
EROMExpansion ROM Base Address
CAPCapabilities Pointer
ROReserved
INTRInterrupt Information
MGNTMinimum Grant
MLATMaximum Latency
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[Table 32] Memory Register Base Address Lower 32-bits (BAR0) Register
BitsTypeDefault ValueDescription
31:14RW0h
13:4RO0hReserved
3RO0Pre-Fetchable
2:1RO2hAddress Type (64-bit)
0RO0Memory Space Indicator (MEMSI)
[Table 33] Memory Register Base Address Upper 32-bits (BAR1)
BitsTypeDefault ValueDescription
31:0RO0hBase Address
[Table 34] Index/Data Pair Register Base Address (BAR2) Register
BitsTypeDefault ValueDescription
31:0RO0hN/A
[Table 35] BAR3 Register
BitsTypeDefault ValueDescription
31:0RO0hN/A
Base Address
[Table 36] Vendor Specific BAR4 Register
BitsTypeDefault ValueDescription
31:0RO0hN/A
[Table 37] Vendor Specific BAR5 Register
BitsTypeDefault ValueDescription
31:0RO0hN/A
[Table 38] Cardbus CIS Pointer Register
BitsTypeDefault ValueDescription
31:0RO0hN/A
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