Samsung MZ7LM480HMHQ-00005 User Manual

Brochure

Samsung
PM863a/SM863a SSD
for data centers

Keep ahead of ever-increasing data demands

Brochure

Stay on top of big data

Overview

With the rise of personal, mobile, social and cloud computing, leading data centers are turning to SSDs to meet big
data demands. Samsung’s 3rd-generation V-NAND technology provides high capacities up to 3.84 TB in the same

2.5-inch form factor. Boasting exceptional performance, endurance and power efciency, the new Samsung SATA

2.5-inch PM863a and SM863a SSDs deliver superb IOPS consistency, latency and QoS (quality of service). These
high-performance SSDs provide the essentials for 24/7 data center environments.

High QoS IOPS Consistency Low TCO Power Efciency

PM863a – Robust performance and lower TCO

The PM863a is designed for mixed workload data center
applications, such as CDNs (content delivery networks),
streaming and web servers.

With sequential R/W (read/write) speeds up to 520/480
MB/s and 4 KB random R/W speeds up to 97K/24K IOPS,
it delivers robust performance
workloads.

Generating a better performance-to-power ratio than
HDDs, the PM863a reduces data center operating
costs, resulting in lower TCO (total cost of ownership)
Furthermore, by using the same 2.5-inch SATA interface,
and with capacity options up to 3.84 TB, IT managers can
scale up their data centers using existing infrastructure.

1

under various heavy

2

.

SM863a – Enhanced performance and endurance

With a higher level of endurance than the PM863a,
the SM863a is the ideal choice for write-intensive
applications, such as servers for OLTP (online transaction
processing), emails and databases. The SM863a delivers
sequential R/W speeds up to 510/485 MB/s and 4 KB
random R/W IOPS up to 95K/28K.

3. Performance of SM863a 1,920 GB

3

1. Performance of PM863a 3,840 GB

2. TCO results can vary depending upon the application and conditions of the
contract.

3

Brochure

Safeguard priceless data with robust features

Enhanced data integrity

Both the PM863a and SM863a demonstrate a low
probability of data corruption. End-to-end protection
keeps data consistent along the entire data transfer
path and Power Loss Protection safeguards data in the
write cache in the event of a power failure. The Dynamic
Thermal Guard algorithm monitors the temperature of
the SSD to help prevent thermal shutdown.

End-to-End

Data Protection

Power Loss

Protection

Dynamic

Thermal Guard

Data Security

A technology leader in innovation

With innovation as its foundation, Samsung is one of the
leading solution providers of world-class technology
and scale. Samsung actually designs and integrates a
wide array of critical SSD components in house, from the

DRAM and NAND to the controller and rmware. Based

on its intimate knowledge of every component, Samsung

ne-tunes each element, enabling them to work in

perfect synergy.

Self-encrypted drives

The PM863a and SM863a protect data with AES 256­bit hardware-based encryption. This encryption engine
secures data without the performance degradation often
experienced with software-based encryption.

V-NAND

DRAM Controller Firmware

+ + +

4

Brochure

Technical specications

Specications

Capacity

1

PM863a

MZ7LM240HMHQ MZ7LM480HMHQ MZ7LM960HMJP MZ7LM1T9HMJP MZ7LM3T8HMLP

240 GB 480 GB 960 GB 1,920 GB 3,840 GB

Seq. read (128 KB) 330 MB/s 520 MB/s 520 MB/s 520 MB/s 520 MB/s

Performance

2

Seq. write (128 KB) 300 MB/s 480 MB/s 480 MB/s 480 MB/s 480 MB/s

Rand. read (4KB, QD32) 86K IOPS 97K IOPS 97K IOPS 97K IOPS 97K IOPS

Rand. write (4KB, QD32) 9K IOPS 16K IOPS 24K IOPS 24K IOPS 24K IOPS

Average power consumption

TBW (Terabytes written)

5

DWPD

1

Capacity

3

(3,840 GB) Active Read (Typ.) 3 W, Active Write (Typ.) 4 W, Idle 1.3 W

4

SM863a

341 TB 683 TB 1,366 TB 2,733 TB 5,466 TB

MZ7KM240HMHQ MZ7KM480HMHQ MZ7KM960HMJP MZ7KM1T9HMJP

240 GB 480 GB 960 GB 1,920 GB

Seq. read (128 KB) 410 MB/s 510 MB/s 510 MB/s 510 MB/s

Performance

2

Seq. write (128 KB) 450 MB/s 485 MB/s 485 MB/s 485 MB/s

Rand. read (4KB, QD32) 90K IOPS 95K IOPS 95K IOPS 95K IOPS

Rand. write (4KB, QD32) 10K IOPS 19K IOPS 25K IOPS 28K IOPS

Average power consumption

TBW (Terabytes written)

5

DWPD

3

(1,920 GB) Active Read (Typ.) 2.5 W, Active Write (Typ.) 3 W, Idle 1.4 W

4

1,540 TB 3,080 TB 6,160 TB 12,320 TB

Form factor 2.5 inch 7mmT

Interface SATA 6.0 Gbps

Dimension (WxDxH) Max. 100.2 x 69.85 x 6.8 (mm)

Weight Max. 55 g (PM863a) / Max. 60 g (SM863a)

NAND type Samsung V-NAND

Common features

Encryption support AES 256-bit Encryption Engine

Allowable voltage 5.0 V ± 5%

6

MTBF

7

UBER

Operating temperature 0 - 70°C

Shock 1500 G, duration 0.5 ms, Half Sine Wave

1. 1 GB = 1 Billion bytes by IDEMA. Actual usable capacity may be less (due to formatting, partitioning,
operating system, applications or otherwise).

2. Actual performance may vary depending on use conditions and environment.

1) Performance measured using IOMeter 2006 with queue depth 32, C216 Intel

2) Measurements are performed on whole LBA range.

3) Write cache enabled.

4) 1 MB/sec = 1,048,576 bytes/sec was used in sequential performance.

3. Actualpowerconsumptionmayvarydependingonsystemhardware&conguration.Activewrite

power is measured on 128 KB sequential write and active read power is measured on 4 KB random
read.

®

SATA 6G port.

1.3 (3 Years)

3.6 (5 Years)

2,000,000 hours

1 sector per 1017 bits read

4. TBW is measured while running 100 % random 4 KB writes across the entire SSD. (TBW = DWPD x
365 x 3 x User capacity).

5. Drive Write Per Day (DWPD)

6. MTBF is Mean Time Between Failure. As same word, annual failure ratio is 0.438%.

7. Uncorrectable Bit Error Rate (UBER) is a metric for the rate of occurrence of data errors, equal to the

numberofdataerrorsperbitsreadasspeciedintheJESD218documentofJEDECstandard.Forthe
enterpriseapplication,JEDECrecommendsthatUBERshallbebelow10-16.

For more information

For more information about the Samsung PM863a/SM863a SSD, visit www.samsung.com/semiconductor.

Copyright © 2016 Samsung Electronics Co., Ltd. All rights reserved. Samsung is a registered trademark of Samsung Electronics Co., Ltd. Specications and designs are subject to change without

notice. Nonmetric weights and measurements are approximate. All data were deemed correct at time of creation. Samsung is not liable for errors or omissions. All brand, product, service names

and logos are trademarks and/or registered trademarks of their respective owners and are hereby recognized and acknowledged.

Intel is a registered trademark of Intel Corporation in the U.S. and/or other countries.

Samsung Electronics Co., Ltd.

129 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16677, Korea www.samsung.com 2016-11

1