Samsung KM684000BLTI-7L, KM684000BLTI-5L, KM684000BLRI-7L, KM684000BLRI-5L, KM684000BLR-7L Datasheet
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KM684000B Family
Document Title
512Kx8 bit Low Power CMOS Static RAM
Revision History
CMOS SRAM
Revision No.
0.0
0.1
1.0
2.0
3.0
History
Initial Draft
Revise
- Changed Operating current by reticle revision
ICC at write : 35mA → 45mA
ICC1 at read/write : 15/35mA → 10/45mA
Finalize
- Changed Operating current
ICC1 at write : 45mA → 40mA
ICC2; 90mA → 80mA
- Change test load at 55ns : 100pF → 50pF
Revise
- Change datasheet format
Revise
- Industrial product speed bin change:70/100ns → 55/70ns
Draft Date
December 7, 1996
March 6, 1997
October 9, 1997
February 17, 1998
September 8, 1998
Remark
Advance
Preliminary
Final
Final
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 3.0
September 1998
KM684000B Family
512Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
FEATURES
• Process Technology: TFT
• Organization: 512Kx8
• Power Supply Voltage: 4.5~5.5V
• Low Data Retention Voltage: 2V(Min)
• Three state output and TTL Compatible
• Package Type: 32-DIP-600, 32-SOP-525
32-TSOP2-400F/R
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range Speed
KM684000BL
KM684000BL-L
KM684000BLI
KM684000BLI-L
1. The parameter is measured with 50pF test load.
PIN DESCRIPTION
A18
1
A16
2
3
A14
4
A12
5
A7
6
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
32-DIP
7
32-SOP
8
32-TSOP2
9
(Forward)
10
11
12
13
14
15
16
Commercial (0~70°C)
Inderstrial (-40~85°C)
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VCC
A15
A17
WE
A13
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
A8
27
A9
26
25
24
23
22
21
20
19
18
17
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
32-TSOP2
(Reverse)
4.5~5.5V
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
551)/70ns
FUNCTIONAL BLOCK DIAGRAM
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
GENERAL DESCRIPTION
The KM684000B families are fabricated by SAMSUNG′s
advanced CMOS process technology. The families support
various operating temperature ranges and various package
types for user flexibility of system design. The family also
support low data retention voltage for battery back-up operation with low data retention current.
Power Dissipation
Standby
(ISB1, Max)
100µA
20µA
100µA
50µA
Clk gen.
A18
A16
A14
A12
A7
A6
A5
A4
A1
A0
I/O1 Data
I/O8
Row
select
cont
Data
cont
Operating
(ICC2, Max)
80mA
PKG Type
32-DIP,32-SOP
32-TSOP2-F/R
32-SOP
32-TSOP2-F/R
Precharge circuit.
Memory array
1024 rows
512×8 columns
I/O Circuit
Column select
Pin Name Function
A9 A8 A13A17A15 A11A10
A3
A2
WE Write Enable Input
CS Chip Select Input
OE Output Enable Input
A0~A18 Address Inputs
CS
WE
OE
Control
logic
I/O1~I/O8 Data Inputs/Outputs
Vcc Power
Vss Ground
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 3.0
September 1998
KM684000B Family
PRODUCT LIST
Commercial Temperature Products(0~70°C) Industrial Temperature Products(-40~85°C)
Part Name Function Part Name Function
KM684000BLP-5
KM684000BLP-5L
KM684000BLP-7
KM684000BLP-7L
KM684000BLG-5
KM684000BLG-5L
KM684000BLG-7
KM684000BLG-7L
KM684000BLT-5L
KM684000BLT-7L
KM684000BLR-5L
KM684000BLR-7L
FUNCTIONAL DESCRIPTION
CS OE WE I/O Pin Mode Power
H
L H H High-Z Output disbaled Active
L L H Dout Read Active
L
1. X means don′t care.( Must be in low or high state.)
32-DIP, 55ns, L-pwr
32-DIP, 55ns, LL-pwr
32-DIP, 70ns, L-pwr
32-DIP, 70ns, LL-pwr
32-SOP, 55ns, L-pwr
32-SOP, 55ns, LL-pwr
32-SOP, 70ns, L-pwr
32-SOP, 70ns, LL-pwr
32-TSOP2-F, 55ns, LL-pwr
32-TSOP2-F, 70ns, LL-pwr
32-TSOP2-R, 55ns, LL-pwr
32-TSOP2-R, 70ns, LL-pwr
1)
X
1)
X
CMOS SRAM
KM684000BLGI-5
KM684000BLGI-5L
KM684000BLGI-7
KM684000BLGI-7L
KM684000BLTI-5L
KM684000BLTI-7L
KM684000BLRI-5L
KM684000BLRI-7L
1)
X
L Din Write Active
High-Z Deselected Standby
32-SOP, 55ns, L-pwr
32-SOP, 55ns, LL-pwr
32-SOP, 70ns, L-pwr
32-SOP, 70ns, LL-pwr
32-TSOP2-F, 55ns, LL-pwr
32-TSOP2-F, 70ns, LL-pwr
32-TSOP2-R, 55ns, LL-pwr
32-TSOP2-R, 70ns, LL-pwr
ABSOLUTE MAXIMUM RATINGS
Item Symbol Ratings Unit Remark
Voltage on any pin relative to Vss VIN,VOUT -0.5 to 7.0 V Voltage on Vcc supply relative to Vss VCC -0.5 to 7.0 V Power Dissipation PD 1.0 W Storage temperature TSTG -65 to 150 °C -
Operating Temperature TA
Soldering temperature and time TSOLDER 260°C, 10sec(Lead Only) - -
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
1)
0 to 70 °C KM684000BL/L-L
-40 to 85 °C KM684000BLI/LI-L
3
Revision 3.0
September 1998
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