KM681002A
KM681002A, KM681002AI |
CMOS SRAM |
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Document Title
128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range.
Revision History
Rev.No. |
History |
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Rev. 0.0 |
Initial release with Preliminary. |
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Rev. 1.0 |
Release to final Data Sheet. |
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1.1. Delete Preliminary |
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Rev. 2.0 |
Update D.C parameters. |
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2.1. Update D.C parameters |
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Items |
Previous spec. |
Updated spec. |
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(12/15/17/20ns part) |
(12/15/17/20ns part) |
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Icc |
200/190/180/170mA |
170/165/165/160mA |
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Isb |
30mA |
25mA |
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Isb1 |
10mA |
8mA |
Rev. 3.0 Add Industrial Temperature Range parts and 300mil-SOJ PKG.
3.1.Add 32-Pin 300mil-SOJ Package.
3.2.Add Industrial Temperature Range parts with the same parameters as Commercial Temperature Range parts.
3.2.1.Add KM68002AI parts for Industrial Temperature Range.
3.2.2.Add ordering information.
3.2.3.Add the condition for operating at Industrial Temp. Range.
3.3.Add the test condition for Voh1 with Vcc=5V±5% at 25°C
3.4.Add timing diagram to define tWP as ²(Timing Wave Form of Write Cycle(CS=Controlled)²
Rev. 4.0 4.1. Delete 17ns Part
DraftData |
Remark |
Apr. 22th, 1995 |
Preliminary |
Feb. 29th, 1996 |
Final |
Jul. 16th, 1996 |
Final |
Jun. 2nd, 1997 |
Final |
Feb. 25th, 1998 |
Final |
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
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Rev 4.0 |
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Ferruary 1998 |
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KM681002A, KM681002AI |
CMOS SRAM |
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128K x 8 Bit High-Speed CMOS Static RAM |
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FEATURES |
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GENERAL DESCRIPTION |
• Fast Access Time 12, 15, 20ns(Max.) |
The KM681002A is a 1,048,576-bit high-speed Static Random |
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• Low Power Dissipation |
Access Memory organized as 131,072 words by 8 bits. The |
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Standby (TTL) |
: 25mA(Max.) |
KM681002A uses 8 common input and output lines and has an |
(CMOS) |
: 8mA(Max.) |
output enable pin which operates faster than address access |
Operating KM681002A - 12 : 170mA(Max.) |
time at read cycle. The device is fabricated using Samsung′s |
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KM681002A - 15 : 165mA(Max.) |
advanced CMOS process and designed for high-speed circuit |
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KM681002A - 20 : 160mA(Max.) |
technology. It is particularly well suited for use in high-density |
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• Single 5.0V±10% Power Supply |
high-speed system applications. The KM681002A is packaged |
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• TTL Compatible Inputs and Outputs |
in a 400mil 32-pin plastic SOJ or TSOP2 forward. |
•I/O Compatible with 3.3V Device
•Fully Static Operation
-No Clock or Refresh required
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Three State Outputs |
ORDERING INFORMATION |
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• Center Power/Ground Pin Configuration |
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KM681002A -12/15/20 |
Commercial Temp. |
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Standard Pin Configuration |
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KM681002AI -12/15/20 |
Industrial Temp. |
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KM681002AJ : 32-SOJ-400 |
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KM681002AT: 32-TSOP2-400F |
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FUNCTIONAL BLOCK DIAGRAM
A0 |
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Clk Gen. |
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Pre-Charge Circuit |
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A1 |
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A2 |
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Select |
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A3 |
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Memory Array |
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A4 |
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Row |
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512 Rows |
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A5 |
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256x8 Columns |
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A6 |
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A7 |
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A8 |
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I/O1~I/O8 |
Data |
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I/O Circuit |
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Cont. |
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Column Select |
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CLK |
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Gen. |
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A9 |
A10 |
A11 A12 A13 A14 |
A15 |
A16 |
CS |
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WE |
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OE |
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PIN CONFIGURATION(Top View)
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A0 |
1 |
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32 |
A16 |
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A1 |
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31 |
A15 |
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A2 |
3 |
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30 |
A14 |
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A3 |
4 |
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29 |
A13 |
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CS |
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5 |
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28 |
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OE |
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I/O1 |
6 |
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27 |
I/O8 |
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I/O2 |
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I/O7 |
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7 |
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26 |
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Vcc |
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Vss |
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8 |
SOJ/ |
25 |
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Vss |
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Vcc |
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TSOP2 |
24 |
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I/O3 |
10 |
23 |
I/O6 |
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I/O4 |
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I/O5 |
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11 |
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A12 |
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WE |
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A4 |
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A11 |
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A5 |
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A10 |
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14 |
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A6 |
15 |
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A9 |
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A7 |
16 |
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17 |
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A8 |
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PIN FUNCTION
Pin Name |
Pin Function |
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A0 - A16 |
Address Inputs |
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Write Enable |
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WE |
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Chip Select |
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CS |
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Output Enable |
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OE |
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I/O1 ~ I/O8 |
Data Inputs/Outputs |
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VCC |
Power(+5.0V) |
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VSS |
Ground |
- 2 - |
Rev 4.0 |
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Ferruary 1998 |
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KM681002A, KM681002AI |
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CMOS SRAM |
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ABSOLUTE MAXIMUM RATINGS* |
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Parameter |
Symbol |
Rating |
Unit |
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Voltage on Any Pin Relative to VSS |
VIN, VOUT |
-0.5 to 7.0 |
V |
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Voltage on VCC Supply Relative to VSS |
VCC |
-0.5 to 7.0 |
V |
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Power Dissipation |
PD |
1.0 |
W |
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Storage Temperature |
TSTG |
-65 to 150 |
°C |
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Operating Temperature |
Commercial |
TA |
0 to 70 |
°C |
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Industrial |
TA |
-40 to 85 |
°C |
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*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS(TA=0 to 70°C)
Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
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Supply Voltage |
VCC |
4.5 |
5.0 |
5.5 |
V |
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Ground |
VSS |
0 |
0 |
0 |
V |
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Input High Voltage |
VIH |
2.2 |
- |
VCC + 0.5** |
V |
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Input Low Voltage |
VIL |
-0.5* |
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0.8 |
V |
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NOTE: The above parameters are also guaranteed at industrial temperature range.
*VIL(Min) = -2.0V a.c(Pulse Width≤10ns) for I≤20mA
**VIH(Max) = VCC + 2.0V a.c (Pulse Width≤10ns) for I≤20mA
DC AND OPERATING CHARACTERISTICS(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)
Parameter |
Symbol |
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Test Conditions |
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Min |
Max |
Unit |
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Input Leakage Current |
ILI |
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VIN=VSS to VCC |
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-2 |
2 |
mA |
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Output Leakage Current |
ILO |
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-2 |
2 |
mA |
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CS=VIH or OE=VIH or WE=VIL |
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VOUT=VSS to VCC |
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Operating Current |
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Min. Cycle, 100% Duty |
12ns |
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170 |
mA |
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CS=VIL, VIN=VIH or VIL, |
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15ns |
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165 |
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IOUT=0mA |
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20ns |
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160 |
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Standby Current |
ISB |
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Min. Cycle, |
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25 |
mA |
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CS=VIH |
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ISB1 |
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f=0MHz, |
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³VCC-0.2V, |
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8 |
mA |
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CS |
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VIN³VCC-0.2V or VIN£0.2V |
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Output Low Voltage Level |
VOL |
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IOL=8mA |
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0.4 |
V |
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Output High Voltage Level |
VOH |
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IOH=-4mA |
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2.4 |
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V |
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VOH1* |
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IOH1=-0.1mA |
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3.95 |
V |
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NOTE: The above parameters are also guaranteed at industrial temperature range. * VCC=5.0V, Temp.=25°C
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item |
Symbol |
Test Conditions |
MIN |
Max |
Unit |
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Input/Output Capacitance |
CI/O |
VI/O=0V |
- |
8 |
pF |
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Input Capacitance |
CIN |
VIN=0V |
- |
6 |
pF |
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* NOTE : Capacitance is sampled and not 100% tested.
- 3 - |
Rev 4.0 |
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Ferruary 1998 |
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