Samsung KM6264BLP-7L, KM6264BLP-7, KM6264BLP-10L, KM6264BLP-10, KM6264BLGI-10L Datasheet

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KM6264B Family

8Kx8 bit Low Power CMOS Static RAM

FEATURE SUMMARY GENERAL DESCRIPTION

CMOS SRAM

• Process Technology : CMOS

• Organization : 8K x 8

• Power Supply Voltage : Single 5V ± 10%

• Low Data Retention Voltage : 2V(Min)

• Three state output and TTL Compatible

• Package Type : JEDEC Standard

28-DIP, 28-SOP

PRODUCT FAMILY

Product

Family

KM6264BL KM6264BL-L KM6264BLE KM6264BLE-L KM6264BLI KM6264BLI-L

* measured with 30pF test load

Operating

Temperature

Commercial (0~70 °C) Extended (-25~-85 °C) Industrial (-40~85 °C)

70/100/120ns

100*ns

PIN DESCRIPTION

The KM6264B family is fabricated by SAMSUNG's advanced CMOS process technology. The family can support various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-up operations with low data retention current.

PKG TypeSpeed

Standby(Isb1, Max)

Power Dissipation

Operating(Icc2)

100uA

28-DIP, 28-SOP

28-SOP

10uA

100uA

50uA

55mA

100uA

28-SOP

50uA

FUNCTIONAL BLOCK DIAGRAM

N.C A12

I/O1 I/O2 I/O3

Vss

A7 A6 A5 A4 A3 A2 A1 A0

1 2 3 4 5 6 7

28-Pin DIP

28-Pin SOP

9 10 11 12 13 14

ELECTRONICS

Y-Decoder

Vcc

/WE

CS2

A11

/OE

A10

/CS1

I/O8

I/O7

I/O6

I/O5

I/O4

A0~A12

X-Decoder

I/O1~8

Pin Name

A0~A12 /WE /CS1, CS2 /OE I/O1~I/O8 Vcc Vss N.C

Cell Array

I/O Buffer

Function

Address Inputs Write Enable Input Chip Select Input Output Enable Input Data Input/Output Power(5V) Ground No Connection

Control Logic

/CS1, CS2 /WE, /OE

Revision. 0.0

Auust. 1996

KM6264B Family

PRODUCT LIST & ORDERING INFORMATION

PRODUCT LIST

Commercial Temp Products

(0~70 °C)

Extended Temp Products

(-25~85 °C)

CMOS SRAM

Industrial Temp Products

(-40~85 °C)

Part Name

KM6264BLP-7 KM6264BLP-7L KM6264BLP-10 KM6264BLP-10L KM6264BLP-12 KM6264BLP-12L KM6264BLG-7 KM6264BLG-7L KM6264BLG-10 KM6264BLG-10L KM6264BLG-12 KM6264BLG-12L

Function

28-DIP, 70ns, L-pwr 28-DIP, 70ns, , LL-pwr 28-DIP, 100ns, , L-pwr 28-DIP, 100ns, LL-pwr 28-DIP, 120ns, , L-pwr 28-DIP, 120ns, LL-pwr 28-SOP, 70ns, L-pwr 28-SOP, 70ns, LL-pwr 28-SOP, 100ns, L-pwr 28-SOP, 100ns, LL-pwr 28-SOP, 120ns, L-pwr 28-SOP, 120ns, LL-pwr

ORDERING INFORMATION

K M6 2 X 64 B X X XX - XX X

Part Name Function

KM6264BLGE-10 KM6264BLGE-10L

Function

28-SOP, 100ns, L-pwr 28-SOP, 100ns, LL-pwr

Part Name

KM6264BLGI-10 KM6264BLGI-10L

28-SOP, 100ns, L-pwr 28-SOP, 100ns, LL-pwr

ELECTRONICS

L-Low Low Power, Blank-Low Power or High Power

Access Time : 7=70ns, 10=100ns, 12=120ns Operating Temperature :

I=Industrial, E=Extended, Blank=Commercial Package Type : G=SOP, P=DIP,

L-Low Power or Low Low Power, Blank-High Power

Die Version : B=3rd generation Density : 64=64K bit Blank=5V

Organization : 2= x8 SEC Standard SRAM

Revision. 0.0

Auust. 1996

KM6264B Family

ABSOLUTE MAXIMUM RATINGS *

CMOS SRAM

Item Ratings

Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature

Symbol

Vin, Vout Vcc Pd Tstg Ta

-0.5 to Vcc+0.5

-0.5 to 7.0

1.0

-65 to 150 0 to 70

-25 to 85

-40 to 85

Soldering temperature and time

* Stresses greater than those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Tsolder

260 °C, 10sec(Lead Only)

Unit

V V

°C

°C °C °C

Remark

KM6264BL/L-L

KM6264BLE/LE-L

KM6264BLI/LI-L

RECOMMENDED DC OPERATING CONDITIONS*

Item

Supply voltage Ground Input high voltage Input low voltage

* 1) Commercial Product : Ta=0 to 70 ° C, unless otherwise specified

2) Extended Product : Ta=-25 to 85 ° C, unless otherwise specified

3) Industrial Product : Ta=-40 to 85 ° C, unless otherwise specified ** Ta=25 °C *** Vil(min)=-3.0V for ¡Â50ns pulse

Symbol

Vcc Vss

Vih

Vil

Min

4.5 0

2.2

-0.5***

Typ**

5.0 0

Max

5.5 0

Vcc+0.5

0.8

Unit

V V V V

CAPACITANCE * (f=1MHz, Ta=25 °C)

Item

Symbol

Input capacitance Input/Output capacitance

* Capacitance is sampled not 100% tested

ELECTRONICS

Cin Cio

Test Condition

Vin=0V Vio=0V

Min

Max

6 8

Unit

pF pF

Revision. 0.0

Auust. 1996

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