Samsung KM48V2100BSL-7, KM48V2100BSL-6, KM48V2100BSL-5, KM48V2100BS-7, KM48V2100BS-5 Datasheet
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KM48C2000B, KM48C2100B
CMOS DRAM
KM48V2000B, KM48V2100B
This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells
within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.
This 2Mx8 Fast Page Mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low power
consumption and high reliability.
It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
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Part Identification
- KM48C2000B/B-L (5V, 4K Ref.)
- KM48C2100B/B-L (5V, 2K Ref.)
- KM48V2000B/B-L (3.3V, 4K Ref.)
- KM48V2100B/B-L (3.3V, 2K Ref.)
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Fast Page Mode operation
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Byte/Word Read/Write operation
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CAS-before-RAS refresh capability
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RAS-only and Hidden refresh capability
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Self-refresh capability (L-ver only)
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Fast parallel test mode capability
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TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
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Early Write or output enable controlled write
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JEDEC Standard pinout
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Available in Plastic SOJ and TSOP(II) packages
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Single +5V
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10% power supply (5V product)
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Single +3.3V
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0.3V power supply (3.3V product)
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Row Decoder
Column Decoder
RAS
CAS
W
Vcc
Vss
DQ0
to
DQ7
A0-A11
(A0 - A10)*1
A0 - A8
(A0 - A9)*1
Memory Array
2,097,152 x 8
Cells
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
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Refresh Cycles
Part
NO.
VCC
Refresh
cycle
Refresh period
Normal L-ver
C2000B 5V
4K 64ms
128ms
V2000B 3.3V
C2100B 5V
2K 32ms
V2100B 3.3V
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Performance Range
Speed
tRAC tCAC tRC tPC
Remark
-5 50ns 13ns 90ns 35ns 5V/3.3V
-6 60ns 15ns 110ns 40ns 5V/3.3V
-7 70ns 20ns 130ns 45ns 5V/3.3V
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Active Power Dissipation
Speed
3.3V 5V
4K 2K 4K 2K
-5 324 396 495 605
-6 288 360 440 550
-7 252 324 385 495
Unit : mW
Sense Amps & I/O
Data out
Buffer
Data in
Buffer
OE
Note) *1 : 2K Refresh
KM48C2000B, KM48C2100B
CMOS DRAM
KM48V2000B, KM48V2100B
VCC
DQ0
DQ1
DQ2
DQ3
W
RAS
*A11(N.C)
A10
A0
A1
A2
A3
VCC
VSS
DQ7
DQ6
DQ5
DQ4
CAS
OE
A9
A8
A7
A6
A5
A4
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
PIN CONFIGURATION (Top Views)
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KM48C/V20(1)00BS
Pin Name Pin Function
A0 - A11 Address Inputs (4K Product)
A0 - A10 Address Inputs (2K Product)
DQ0 - 7 Data In/Out
VSS Ground
RAS Row Address Strobe
CAS Column Address Strobe
W Read/Write Input
OE Data Output Enable
VCC
Power(+5V)
Power(+3.3V)
N.C No Connection (2K Ref. product)
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VCC
DQ0
DQ1
DQ2
DQ3
W
RAS
*A11(N.C)
A10
A0
A1
A2
A3
VCC
VSS
DQ7
DQ6
DQ5
DQ4
CAS
OE
A9
A8
A7
A6
A5
A4
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
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KM48C/V20(1)00BK
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*A11 is N.C for KM48C/V2100B(5V/3.3V, 2K Ref. product)
K : 300mil 28 SOJ
S : 300mil 28 TSOP II
KM48C2000B, KM48C2100B
CMOS DRAM
KM48V2000B, KM48V2100B
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted
to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Parameter Symbol
Rating
Units
3.3V 5V
Voltage on any pin relative to VSS VIN,VOUT -0.5 to +4.6 -1.0 to +7.0 V
Voltage on VCC supply relative to VSS VCC -0.5 to +4.6 -1.0 to +7.0 V
Storage Temperature Tstg -55 to +150 -55 to +150
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Power Dissipation PD 1 1 W
Short Circuit Output Current IOS 50 50 mA
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70
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)
*1 : VCC+1.3V/15ns(3.3V), VCC+2.0V/20ns(5V), Pulse width is measured at VCC
*2 : -1.3V/15ns(3.3V), -2.0V/20ns(5V), Pulse width is measured at VSS
Parameter Symbol
3.3V 5V
Units
Min Typ Max Min Typ Max
Supply Voltage VCC 3.0 3.3 3.6 4.5 5.0 5.5 V
Ground VSS 0 0 0 0 0 0 V
Input High Voltage VIH 2.0 -
VCC+0.3
*1
2.4 -
VCC+1.0
*1
V
Input Low Voltage VIL
-0.3
*2
- 0.8
-1.0
*2
- 0.8 V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)
Max Parameter Symbol Min Max Units
3.3V
Input Leakage Current (Any input 0¡ÂVIN¡ÂVIN+0.3V,
all other input pins not under test=0 Volt)
II(L) -5 5 uA
Output Leakage Current
(Data out is disabled, 0V¡ÂVOUT¡ÂVCC)
IO(L) -5 5 uA
Output High Voltage Level(IOH=-2mA) VOH 2.4 - V
Output Low Voltage Level(IOL=2mA) VOL - 0.4 V
5V
Input Leakage Current (Any input 0¡ÂVIN¡ÂVIN+0.5V,
all other input pins not under test=0 Volt)
II(L) -5 5 uA
Output Leakage Current
(Data out is disabled, 0V¡ÂVOUT¡ÂVCC)
IO(L) -5 5 uA
Output High Voltage Level(IOH=-5mA) VOH 2.4 - V
Output Low Voltage Level(IOL=4.2mA) VOL - 0.4 V
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