Samsung KM416V1200CT-5, KM416V1200CJL-6, KM416V1200CJL-5, KM416V1200CTL-6, KM416V1200CTL-5 Datasheet

KM416C1000C, KM416C1200C

CMOS DRAMKM416V1000C, KM416V1200C

This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power con­sumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS­before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This
1Mx16 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

• Part Identification

- KM416C1000C/C-L (5V, 4K Ref.)

- KM416C1200C/C-L (5V, 1K Ref.)

- KM416V1000C/C-L (3.3V, 4K Ref.)

- KM416V1200C/C-L (3.3V, 1K Ref.)

• Fast Page Mode operation

• 2 CAS Byte/Word Read/Write operation

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Self-refresh capability (L-ver only)

• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II)
400mil packages

• Single +5V±10% power supply (5V product)

• Single +3.3V±0.3V power supply (3.3V product)

Control
Clocks

VBB Generator

Refresh Timer

Refresh Control

Refresh Counter

Row Address Buffer

Col. Address Buffer

Row Decoder

Column Decoder

Lower

Data out

Buffer

RAS
UCAS
LCAS

W

Vcc
Vss

DQ0

to

DQ7

A0-A11

(A0 - A9)*1

A0 - A7

(A0 - A9)*1

Memory Array
1,048,576 x16

Cells

SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.

1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

DESCRIPTION

FEATURES

FUNCTIONAL BLOCK DIAGRAM

• Refresh Cycles
Part

NO.

VCC

Refresh

cycle

Refresh period

Normal L-ver

C1000C 5V

4K 64ms

128ms

V1000C 3.3V
C1200C 5V

1K 16ms

V1200C 3.3V

• Perfomance Range

Speed

tRAC tCAC tRC tPC

Remark

-5 50ns 15ns 90ns 35ns 5V/3.3V

-6 60ns 15ns 110ns 40ns 5V/3.3V

• Active Power Dissipation

Speed

3.3V 5V

4K 1K 4K 1K

-5 324 504 495 770

-6 288 468 440 715

Unit : mW

Sense Amps & I/O

Upper

Data in

Buffer

Upper

Data out

Buffer

Lower

Data in

Buffer

DQ8

to

DQ15

OE

Note) *1 : 1K Refresh

KM416C1000C, KM416C1200C

CMOS DRAMKM416V1000C, KM416V1200C

VCC
DQ0
DQ1
DQ2
DQ3

VCC
DQ4
DQ5
DQ6
DQ7

N.C

N.C
N.C

W

RAS

*A11(N.C)
*A10(N.C)

A0
A1
A2
A3

VCC

VSS
DQ15
DQ14
DQ13
DQ12
VSS
DQ11
DQ10
DQ9
DQ8
N.C

N.C
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
VSS

1
2
3
4
5
6
7
8
9
10
11

12
13
14
15
16
17
18
19
20
21
22

44
43
42
41
40
39
38
37
36
35
34

33
32
31
30
29
28
27
26
25
24
23

PIN CONFIGURATION (Top Views)

Pin Name Pin Function

A0 - A11 Address Inputs (4K Product)

A0 - A9 Address Inputs (1K Product)

DQ0 - 15 Data In/Out

VSS Ground

RAS Row Address Strobe

UCAS Upper Column Address Strobe

LCAS Lower Column Address Strobe

W Read/Write Input

OE Data Output Enable

VCC

Power(+5V)
Power(+3.3V)

N.C No Connection

VCC
DQ0
DQ1
DQ2
DQ3

VCC
DQ4
DQ5
DQ6
DQ7

N.C

N.C

W

RAS

*A11(N.C)
*A10(N.C)

A0
A1
A2
A3

VCC

VSS
DQ15
DQ14
DQ13
DQ12
VSS
DQ11
DQ10
DQ9
DQ8
N.C
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
VSS

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21

42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22

*A10 and A11 are N.C for KM416C/V1200C(5V/3.3V, 1K Ref. product)
J : 400mil 42 SOJ

T : 400mil 50(44) TSOP II

•KM416C/V10(2)00CJ

•KM416C/V10(2)00CT

KM416C1000C, KM416C1200C

CMOS DRAMKM416V1000C, KM416V1200C

ABSOLUTE MAXIMUM RATINGS

* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted

to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.

Parameter Symbol

Rating

Units

3.3V 5V

Voltage on any pin relative to VSS VIN,VOUT -0.5 to +4.6 -1.0 to +7.0 V
Voltage on VCC supply relative to VSS VCC -0.5 to +4.6 -1.0 to +7.0 V
Storage Temperature Tstg -55 to +150 -55 to +150 °C
Power Dissipation PD 1 1 W
Short Circuit Output Current IOS 50 50 mA

RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70°C)

*1 : VCC+1.3V/15ns(3.3V), VCC+2.0V/20ns(5V), Pulse width is measured at VCC
*2 : -1.3V/15ns(3.3V), -2.0V/20ns(5V), Pulse width is measured at VSS

Parameter Symbol

3.3V 5V
Units

Min Typ Max Min Typ Max

Supply Voltage VCC 3.0 3.3 3.6 4.5 5.0 5.5 V
Ground VSS 0 0 0 0 0 0 V
Input High Voltage VIH 2.0 -

VCC+0.3

*1

2.4 -

VCC+1.0

*1

V

Input Low Voltage VIL

-0.3

*2

- 0.8

-1.0

*2

- 0.8 V

DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)

Max Parameter Symbol Min Max Units

3.3V

Input Leakage Current (Any input 0≤VIN≤VIN+0.3V,
all other input pins not under test=0 Volt)

II(L) -5 5 uA

Output Leakage Current
(Data out is disabled, 0V≤VOUT≤VCC)

IO(L) -5 5 uA

Output High Voltage Level(IOH=-2mA) VOH 2.4 - V
Output Low Voltage Level(IOL=2mA) VOL - 0.4 V

5V

Input Leakage Current (Any input 0≤VIN≤VIN+0.5V,
all other input pins not under test=0 Volt)

II(L) -5 5 uA

Output Leakage Current
(Data out is disabled, 0V≤VOUT≤VCC)

IO(L) -5 5 uA

Output High Voltage Level(IOH=-5mA) VOH 2.4 - V
Output Low Voltage Level(IOL=4.2mA) VOL - 0.4 V

KM416C1000C, KM416C1200C

CMOS DRAMKM416V1000C, KM416V1200C

*Note :

ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one fast page mode cycle time, tPC.

DC AND OPERATING CHARACTERISTICS (Continued)

ICC1* : Operating Current (RAS and UCAS, LCAS cycling @tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS cycling @tRC=min.)
ICC4* : Fast Page Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS, UCAS or LCAS cycling @tRC=min.)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(V IL)=0.2V, UCAS, LCAS=0.2V,
DQ=Don′t care, TRC=31.25us(4K/L-ver), 125us(1K/L-ver),
TRAS=TRASmin~300ns
ICCS : Self Refresh Current
RAS=UCAS=LCAS=VIL, W=OE=A0 ~ A11=VCC-0.2V or 0.2V,
DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open

Symbol Power Speed

Max

Units

KM416V1000C KM416V1200C KM416C1000C KM416C1200C

ICC1 Don′t care

-5

-6

90
80

140
130

90
80

140
130

mA
mA

ICC2

Normal

L

Don′t care

1
1

1
1

2
1

2
1

mA
mA

ICC3 Don′t care

-5

-6

90
80

140
130

90
80

140
130

mA
mA

ICC4 Don′t care

-5

-6

90
80

90
80

90
80

90
80

mA
mA

ICC5

Normal

L

Don′t care

0.5

200

0.5

200

1

200

1

200

mA

uA

ICC6 Don′t care

-5

-6

90
80

140
130

90
80

140
130

mA

mA
ICC7 L Don′t care 300 200 350 250 uA
ICCS L Don′t care 150 150 200 200 uA

KM416C1000C, KM416C1200C

CMOS DRAMKM416V1000C, KM416V1200C

CAPACITANCE (TA=25°C, VCC=5V or 3.3V, f=1MHz)

Parameter Symbol Min Max Units

Input capacitance [A0 ~ A11] CIN1 - 5 pF
Input capacitance [RAS, UCAS, LCAS, W, OE] CIN2 - 7 pF
Output capacitance [DQ0 - DQ15] CDQ - 7 pF

Test condition (5V device) : VCC=5.0V±10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V

Parameter Symbol

-5 -6
Units Notes

Min Max Min Max

Random read or write cycle time

tRC

90 110 ns

Read-modify-write cycle time

tRWC

133 155 ns

Access time from RAS

tRAC

50 60 ns 3,4,10

Access time from CAS

tCAC

15 15 ns 3,4,5

Access time from column address

tAA

25 30 ns 3,10

CAS to output in Low-Z

tCLZ

0 0 ns 3

Output buffer turn-off delay

tOFF

0 13 0 15 ns 6

Transition time (rise and fall)

tT

3 50 3 50 ns 2

RAS precharge time

tRP

30 40 ns

RAS pulse width

tRAS

50 10K 60 10K ns

RAS hold time

tRSH

13 15 ns

CAS hold time

tCSH

50 60 ns

CAS pulse width

tCAS

13 10K 15 10K ns

RAS to CAS delay time

tRCD

20 37 20 45 ns 4

RAS to column address delay time

tRAD

15 25 15 30 ns 10

CAS to RAS precharge time

tCRP

5 5 ns

Row address set-up time

tASR

0 0 ns

Row address hold time

tRAH

10 10 ns

Column address set-up time

tASC

0 0 ns 11

Column address hold time

tCAH

10 10 ns 11

Column address to RAS lead time

tRAL

25 30 ns

Read command set-up time

tRCS

0 0 ns

Read command hold time referenced to CAS

tRCH

0 0 ns 8

Read command hold time referenced to RAS

tRRH

0 0 ns 8

Write command hold time

tWCH

10 10 ns

Write command pulse width

tWP

10 10 ns

Write command to RAS lead time

tRWL

13 15 ns

Write command to CAS lead time

tCWL

13 15 ns

AC CHARACTERISTICS (0°C≤TA≤70°C, See note 1,2)

Test condition (3.3V device) : VCC=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V

KM416C1000C, KM416C1200C

CMOS DRAMKM416V1000C, KM416V1200C

AC CHARACTERISTICS (Continued)

Parameter Symbol

-5 -6
Units Notes

Min Max Min Max

Data set-up time

tDS

0 0 ns 9,17

Data hold time

tDH

10 10 ns 9,17

Refresh period (1K, Normal)

tREF

16 16 ms

Refresh period (4K, Normal)

tREF

64 64 ms

Refresh period (L-ver)

tREF

128 128 ms

Write command set-up time

tWCS

0 0 ns 7

CAS to W delay time

tCWD

36 40 ns 7,13

RAS to W delay time

tRWD

73 85 ns 7

Column address to W delay time

tAWD

48 55 ns 7

CAS precharge to W delay time

tCPWD

53 60 ns 7

CAS set-up time (CAS-before-RAS refresh)

tCSR

5 5 ns 15

CAS hold time (CAS-before-RAS refresh)

tCHR

10 10 ns 16

RAS to CAS precharge time

tRPC

5 5 ns

Access time from CAS precharge

tCPA

30 35 ns 3

Fast Page mode cycle time

tPC

35 40 ns

Fast Page read-modify-write cycle time

tPRWC

76 80 ns

CAS precharge time (Fast Page cycle)

tCP

10 10 ns 12

RAS pulse width (Fast Page cycle)

tRASP

50 200K 60 200K ns

RAS hold time from CAS precharge

tRHCP

30 35 ns

OE access time

tOEA

13 15 ns 3

OE to data delay

tOED

13 15 ns

Output buffer turn off delay time from OE

tOEZ

0 13 0 15 ns

OE command hold time

tOEH

13 15 ns

RAS pulse width (C-B-R self refresh)

tRASS

100 100 us 18,19,20

RAS precharge time (C-B-R self refresh)

tRPS

90 110 ns 18,19,20

CAS hold time (C-B-R self refresh)

tCHS

-50 -50 ns 18,19,20

KM416C1000C, KM416C1200C

CMOS DRAMKM416V1000C, KM416V1200C

NOTES

An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles
before proper device operation is achieved.
Input voltage levels are Vih/Vil. VIH(min) and VIL(max) are reference levels for measuring timing of input signals.
Transition times are measured between VIH(min) and VIL(max) and are assumed to be 5ns for all inputs.
Measured with a load equivalent to 2 TTL(5V)/1TTL(3.3V) loads and 100pF.
Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only.
If tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by tCAC.
Assumes that tRCD≥tRCD(max).
This parameter defines the time at which the output achieves the open circuit condition and is not referenced to Voh or Vol.

tWCS, tRWD, tCWD, tAWD and tCPWD are non restrictive operating parameters. They are included in the data sheet as electrical

characteristics only. If tWCS≥tWCS(min), the cycle is an early write cycle and the data output will remain high impedance for the
duration of the cycle. If tCWD≥tCWD(min), tRWD≥tRWD(min), tAWD≥tAWD(min) and tCPWD≥tCPWD(min), then the cycle is a read­modify-write cycle and the data output will contain the data read from the selected address. If neither of the above conditions
is satisfied, the condition of the data out is indeterminate.
Either tRCH or tRRH must be satisfied for a read cycle.
These parameters are referenced to CAS falling edge in early write cycles and to W falling edge in OE controlled write cycle

and read-modify-write cycles.
Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference point only.
If tRAD is greater than the specified tRAD(max) limit, then access time is controlled by tAA.
tASC, tCAH are referenced to the earlier CAS falling edge.
tCP is specified from the later CAS rising edge in the previous cycle to the earlier CAS falling edge in the next cycle.

KM416C/V10(2)00C/C-L Truth Table

RAS LCAS UCAS W OE DQ0 - DQ7 DQ8-DQ15 STATE

H X X X X Hi-Z Hi-Z Standby

L H H X X Hi-Z Hi-Z Refresh
L L H H L DQ-OUT Hi-Z Byte Read
L H L H L Hi-Z DQ-OUT Byte Read
L L L H L DQ-OUT DQ-OUT Word Read
L L H L H DQ-IN - Byte Write
L H L L H - DQ-IN Byte Write
L L L L H DQ-IN DQ-IN Word Write
L L L H H Hi-Z Hi-Z -

6.

5.

10.

8.

3.

2.

1.

4.

11.

12.

7.

9.

KM416C1000C, KM416C1200C

CMOS DRAMKM416V1000C, KM416V1200C

tCWD is referenced to the later CAS falling edge at word read-modify-write cycle.

tCWL is specified from W falling edge to the earlier CAS rising edge.
tCSR is referenced to the earlier CAS falling edge before RAS transition low.
tCHR is referenced to the later CAS rising edge after RAS transition low.

tCSR tCHR

RAS

LCAS

UCAS

16.

15.

14.

13.

tDS, tDH is independently specified for lower byte DQ(0-7), upper byte DQ(8-15)

If tRASS≥100us, then RAS precharge time must use tRPS instead of tRP.
For RAS-only refresh and burst CAS-before-RAS refresh mode, 4096(4K)/1024(1K) cycles of burst refresh must be executed
within 64ms/16ms before and after self refresh, in order to meet refresh specification.
For distributed CAS-before-RAS with 15.6us interval CAS-before-RAS refresh should be executed with in 15.6us immediately
before and after self refresh in order to meet refresh specification.

17.

18.

19.

20.

KM416C1000C, KM416C1200C

CMOS DRAMKM416V1000C, KM416V1200C

RAS

VIH -
VIL -

UCAS

VIH -
VIL -

A

VIH -
VIL -

W

VIH -
VIL -

OE

VIH -
VIL -

VOH -
VOL -

DQ0 ~ DQ7

COLUMN

ADDRESS

ROW

ADDRESS

tRAS

tRC

tCRP

tRP

tCSH

tRSHtRCD

tCAS

tRAL

tASR tRAH

tASC

tCAH

tCRP

tAA

tOEA

tCAC

tCLZ

tRAC

OPEN

tOFF

tRCH

Don′t care

Undefined

LCAS

VIH -
VIL -

tCRP

tCSH

tRSHtRCD

tCAS

tRAD

tCRP

tRRH

VOH -
VOL -

DQ8 ~ DQ15

tCAC

tCLZ

tRAC

OPEN DATA-OUT

DATA-OUT

tOFF

tOEZ

tOEZ

tRCS

WORD READ CYCLE

KM416C1000C, KM416C1200C

CMOS DRAMKM416V1000C, KM416V1200C

tCRP

NOTE : DIN = OPEN

LOWER BYTE READ CYCLE

RAS

VIH -
VIL -

LCAS

VIH -
VIL -

A

VIH -
VIL -

W

VIH -
VIL -

OE

VIH -
VIL -

VOH -
VOL -

DQ0 ~ DQ7

COLUMN

ADDRESS

ROW

ADDRESS

tRAS

tRC

tRP

tCSH

tRSHtRCD

tCAS

tRAL

tRAD

tASR tRAH

tASC

tCAH

tCRP

tAA

tOEA

tCAC

tCLZ

tRAC

OPEN DATA-OUT

tOEZ

tOFF

tRCH

Don′t care

Undefined

tRPC

UCAS

VIH -
VIL -

OPEN

VOH -
VOL -

DQ8 ~ DQ15

tRCS

tRRH

KM416C1000C, KM416C1200C

CMOS DRAMKM416V1000C, KM416V1200C

NOTE : DIN = OPEN

UPPER BYTE READ CYCLE

RAS

VIH -
VIL -

LCAS

VIH -
VIL -

A

VIH -
VIL -

W

VIH -
VIL -

OE

VIH -
VIL -

VOH -
VOL -

DQ0 ~ DQ7

COLUMN

ADDRESS

ROW

ADDRESS

tRAS

tRC

tCRP

tRP

tCSH

tRSHtRCD
tCAS

tRAL

tRAD

tASR tRAH tASC

tCAH

tCRP

tAA

tOEA

tCAC

tCLZ

tRAC

OPEN

DATA-OUT

tOEZ

tOFF

tRRH

tRCH

Don′t care

Undefined

UCAS

VIH -
VIL -

OPEN

VOH -
VOL -

DQ8 ~ DQ15

tCRP

tRPC

tRCS