Samsung KM416V1200BTL-7, KM416V1200BTL-6, KM416V1200BTL-5, KM416V1200BT-7, KM416V1200BT-6 Datasheet

KM416C1000B, KM416C1200B

CMOS DRAM

KM416V1000B, KM416V1200B

This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-5,-6 or -7), power
consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS­before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This
1Mx16 Fast Page Mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

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Part Identification

- KM416C1000B/B-L (5V, 4K Ref.)

- KM416C1200B/B-L (5V, 1K Ref.)

- KM416V1000B/B-L (3.3V, 4K Ref.)

- KM416V1200B/B-L (3.3V, 1K Ref.)

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Fast Page Mode operation

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2 CAS Byte/Word Read/Write operation

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CAS-before-RAS refresh capability

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RAS-only and Hidden refresh capability

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Self-refresh capability (L-ver only)

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TTL(5V)/LVTTL(3.3V) compatible inputs and outputs

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Early Write or output enable controlled write

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JEDEC Standard pinout

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Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II)

400mil packages

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Single +5V

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10% power supply (5V product)

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Single +3.3V

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0.3V power supply (3.3V product)

Control
Clocks

VBB Generator

Refresh Timer

Refresh Control

Refresh Counter

Row Address Buffer

Col. Address Buffer

Row Decoder

Column Decoder

Lower

Data out

Buffer

RAS
UCAS
LCAS

W

Vcc
Vss

DQ0

to

DQ7

A0-A11

(A0 - A9)*1

A0 - A7

(A0 - A9)*1

Memory Array
1,048,576 x16

Cells

SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.

1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

DESCRIPTION

FEATURES

FUNCTIONAL BLOCK DIAGRAM

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Refresh Cycles

Part
NO.

VCC

Refresh

cycle

Refresh period

Normal L-ver

C1000B 5V

4K 64ms

128ms

V1000B 3.3V
C1200B 5V

1K 16ms

V1200B 3.3V

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Perfomance Range

Speed

tRAC tCAC tRC tPC

Remark

-5 50ns 15ns 90ns 35ns 5V/3.3V

-6 60ns 15ns 110ns 40ns 5V/3.3V

-7 70ns 20ns 130ns 45ns 5V/3.3V

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Active Power Dissipation

Speed

3.3V 5V

4K 1K 4K 1K

-5 396 576 605 880

-6 360 540 550 825

-7 324 504 495 770

Unit : mW

Sense Amps & I/O

Upper

Data in

Buffer

Upper

Data out

Buffer

Lower

Data in

Buffer

DQ8

to

DQ15

OE

Note) *1 : 1K Refresh

KM416C1000B, KM416C1200B

CMOS DRAM

KM416V1000B, KM416V1200B

VCC
DQ0
DQ1
DQ2
DQ3

VCC
DQ4
DQ5
DQ6
DQ7

N.C

N.C
N.C

W

RAS

*A11(N.C)
*A10(N.C)

A0
A1
A2
A3

VCC

VSS
DQ15
DQ14
DQ13
DQ12
VSS
DQ11
DQ10
DQ9
DQ8
N.C

N.C
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
VSS

1
2
3
4
5
6
7
8
9
10
11

12
13
14
15
16
17
18
19
20
21
22

44
43
42
41
40
39
38
37
36
35
34

33
32
31
30
29
28
27
26
25
24
23

PIN CONFIGURATION (Top Views)

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KM416C/V10(2)00BT

Pin Name Pin Function

A0 - A11 Address Inputs (4K Product)

A0 - A9 Address Inputs (1K Product)

DQ0 - 15 Data In/Out

VSS Ground

RAS Row Address Strobe

UCAS Upper Column Address Strobe

LCAS Lower Column Address Strobe

W Read/Write Input

OE Data Output Enable

VCC

Power(+5V)
Power(+3.3V)

N.C No Connection

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VCC
DQ0
DQ1
DQ2
DQ3

VCC
DQ4
DQ5
DQ6
DQ7

N.C

N.C

W

RAS

*A11(N.C)
*A10(N.C)

A0
A1
A2
A3

VCC

VSS
DQ15
DQ14
DQ13
DQ12
VSS
DQ11
DQ10
DQ9
DQ8
N.C
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
VSS

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21

42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22

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KM416C/V10(2)00BJ

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*A10 and A11 are N.C for KM416C/V1200B(5V/3.3V, 1K Ref. product)
J : 400mil 42 SOJ

T : 400mil 50(44) TSOP II

KM416C1000B, KM416C1200B

CMOS DRAM

KM416V1000B, KM416V1200B

ABSOLUTE MAXIMUM RATINGS

* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to

the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.

Parameter Symbol

Rating

Units

3.3V 5V

Voltage on any pin relative to VSS VIN,VOUT -0.5 to +4.6 -1.0 to +7.0 V
Voltage on VCC supply relative to VSS VCC -0.5 to +4.6 -1.0 to +7.0 V
Storage Temperature Tstg -55 to +150 -55 to +150

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Power Dissipation PD 1 1 W
Short Circuit Output Current IOS 50 50 mA

RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70

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)

*1 : VCC+1.3V/15ns(3.3V), VCC+2.0V/20ns(5V), Pulse width is measured at VCC
*2 : -1.3V/15ns(3.3V), -2.0V/20ns(5V), Pulse width is measured at VSS

Parameter Symbol

3.3V 5V
Units

Min Typ Max Min Typ Max

Supply Voltage VCC 3.0 3.3 3.6 4.5 5.0 5.5 V
Ground VSS 0 0 0 0 0 0 V
Input High Voltage VIH 2.0 -

VCC+0.3

*1

2.4 -

VCC+1.0

*1

V

Input Low Voltage VIL

-0.3

*2

- 0.8

-1.0

*2

- 0.8 V

DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)

Max Parameter Symbol Min Max Units

3.3V

Input Leakage Current (Any input 0¡ÂVIN¡ÂVIN+0.3V,
all other input pins not under test=0 Volt)

II(L) -5 5 uA

Output Leakage Current
(Data out is disabled, 0V¡ÂVOUT¡ÂVCC)

IO(L) -5 5 uA

Output High Voltage Level(IOH=-2mA) VOH 2.4 - V
Output Low Voltage Level(IOL=2mA) VOL - 0.4 V

5V

Input Leakage Current (Any input 0¡ÂVIN¡ÂVIN+0.5V,
all other input pins not under test=0 Volt)

II(L) -5 5 uA

Output Leakage Current
(Data out is disabled, 0V¡ÂVOUT¡ÂVCC)

IO(L) -5 5 uA

Output High Voltage Level(IOH=-5mA) VOH 2.4 - V
Output Low Voltage Level(IOL=4.2mA) VOL - 0.4 V