Samsung KM416S8030T-G-F10, KM416S8030T-G-FL, KM416S8030T-G-FH, KM416S8030T-G-F8 Datasheet
Preliminary
KM416S8030 CMOS SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM
GENERAL DESCRIPTIONFEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS Latency (2 & 3)
-. Burst Length (1, 2, 4, 8 & full page)
-. Burst Type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system
clock.
• Burst Read Single-bit Write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
The KM416S8030 is 134,217,728 bits synchronous high data
rate Dynamic RAM organized as 4 x 2,097,152 words by 16
bits, fabricated with SAMSUNG′s high performance CMOS
technology. Synchronous design allows precise cycle control
with the use of system clock I/O transactions are possible on
every clcok cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high performance memory system applications.
ORDERING INFORMATION
Part NO. MAX Freq. Interface Package
KM416S8030T-G/F8 125MHz
KM416S8030T-G/FH 100MHz
KM416S8030T-G/FL 100MHz
KM416S8030T-G/F10 100MHz
LVTTL
54pin
TSOP(II)
FUNCTIONAL BLOCK DIAGRAM
Bank Select
Refresh Counter
Row Buffer
Address Register
CLK
ADD
LRAS
LCBR
LCKE
LRAS LCBR LWE LDQM
Data Input Register
Row Decoder Col. Buffer
LCAS LWCBR
Timing Register
2M x 16
2M x 16
2M x 16
2M x 16
Column Decoder
Latency & Burst Length
Programming Register
LWE
LDQM
Sense AMP
Output BufferI/O Control
DQi
CLK CKE CS RAS CAS WE LDQM
UDQM
Samsung Electronics reserves the right to
*
change products or specification without
notice.
REV. 2 Mar. '98
Preliminary
KM416S8030 CMOS SDRAM
PIN CONFIGURATION (TOP VIEW)
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
VDD
LDQM
WE
CAS
RAS
CS
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
VSS
N.C/RFU
UDQM
CLK
CKE
N.C
A11
A9
A8
A7
A6
A5
A4
VSS
54PIN TSOP (II)
(400mil x 875mil)
(0.8 mm PIN PITCH)
PIN FUNCTION DESCRIPTION
PIN NAME INPUT FUNCTION
CLK System Clock Active on the positive going edge to sample all inputs.
CS Chip Select
CKE Clock Enable
A0 ~ A11 Address
BA0 ~ BA1 Bank Select Address
RAS Row Address Strobe
CAS Column Address Strobe
WE Write Enable
L(U)DQM Data Input/Output Mask
DQ0 ~ 15 Data Input/Output Data inputs/outputs are multiplexed on the same pins.
VDD/VSS Power Supply/Ground Power and ground for the input buffers and the core logic.
VDDQ/VSSQ Data Output Power/Ground
N.C/RFU
No Connection/
Reserved for Future Use
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
Row / column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA11, column address : CA0 ~ CA8
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when L(U)DQM active.
Isolated power supply and ground for the output buffers to provide improved noise
immunity.
This pin is recommended to be left No Connection on the device.
REV. 2 Mar. '98
Preliminary
KM416S8030 CMOS SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Value Unit
Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 4.6 V
Voltage on VDD supply relative to Vss VDD, VDDQ -1.0 ~ 4.6 V
Storage temperature TSTG -55 ~ +150 °C
Power dissipation PD 1 W
Short circuit current IOS 50 mA
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter Symbol Min Typ Max Unit Note
Supply voltage VDD, VDDQ 3.0 3.3 3.6 V
Input logic high votlage VIH 2.0 3.0 VDDQ+0.3 V 1
Input logic low voltage VIL -0.3 0 0.8 V 2
Output logic high voltage VOH 2.4 - - V IOH = -2mA
Output logic low voltage VOL - - 0.4 V IOL = 2mA
Input leakage current(Inputs) IIL -5 - 5 uA 3
Input leakage current (I/O pins) IIL -5 - 5 uA 3,4
Note :
1. VIH (max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ,
Input leakage currents include HI-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. Dout is disabled, 0V ≤ VOUT ≤ VDDQ.
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)
Parameter Symbol Min Max Unit
Clock CCLK 2.5 4 pF
RAS, CAS, WE, CS, CKE, DQM CIN 2.5 5 pF
Address CADD 2.5 5 pF
DQ0 ~ DQ3 COUT 4 6.5 pF
REV. 2 Mar. '98
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