Samsung K6T4008U1C-TB10, K6T4008U1C-MF85, K6T4008U1C-MB85, K6T4008U1C-MB70, K6T4008U1C-MB10 Datasheet

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K6T4008V1C, K6T4008U1C Family

Document Title

512Kx8 bit Low Power and Low Voltage CMOS Static RAM

Revision History

CMOS SRAM

Revision No.

0.0

0.1

0.11

1.0

History

Initial Draft

Revisied

- Speed bin change KM68U4000C : 85/100ns → 70/85/100ns

- DC Characteristics change ICC : 5mA at read/write → 4mA at read ICC1 : 3mA → 4mA ICC2 : 35mA → 30mA ISB : 0.5mA → 0.3mA ISB1 : 10µA → 15µA for commercial parts

- Add 32-TSOP1-0820

Errata correct

- 32-TSOP1-0813 products: T → TG

Finalize

Draft Data

January 13, 1998

June 12, 1998

November 7, 1998

January 15, 1999

Remark

Advance

Preliminary

Final

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 1.0

January 1999

K6T4008V1C, K6T4008U1C Family

512K×8 bit Low Power and Low Voltage CMOS Static RAM

CMOS SRAM

FEATURES

• Process Technology: TFT

• Organization: 512K×8

• Power Supply Voltage

K6T4008V1C Family: 3.0~3.6V K6T4008U1C Family: 2.7~3.3V

• Low Data Retention Voltage: 2V(Min)

• Three state output and TTL Compatible

• Package Type: 32-SOP-525, 32-TSOP2-400F/R

32-TSOP1-0820F, 32-TSOP1-0813.4F

PRODUCT FAMILY

Product Family Operating Temperature Vcc Range Speed

K6T4008V1C-B K6T4008U1C-B 2.7~3.3V K6T4008V1C-F K6T4008U1C-F 2.7~3.3V

Commercial(0~70°C)

Industrial(-40~85°C)

1. The paramerter is measured with 30pF test load.

3.0~3.6V

701)/85/100ns

3.0~3.6V

701)/85/100ns

PIN DESCRIPTION

A18

1 2

A16 A14

A12

4 5

A7 A6

7 8

32-TSOP2

(Forward)

10 11 12 13 14 15 16

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

32-SOP

I/O1 I/O2 I/O3

VSS

A11

A13 A17

A15

VCC

A18 A16 A14 A12

A4 A3 A2 A1 A0

A7 A6 A5 A4

Name Function Name Function

A0~A18 Address Inputs Vcc Power

WE Write Enable Input Vss Ground

CS Chip Select Input I/O1~I/O8 Data Inputs/Outputs

OE Output Enable Input

VCC

A15

A17

A13

A11

25 24

A10

I/O8

I/O7

I/O6

I/O5

I/O4

32-TSOP1

32-STSOP1

(Forward)

VCC

A15 A17

A13

A11

A10

CS I/O8 I/O7 I/O6 I/O5 I/O4

32 31 30 29 28

32-TSOP2

(Reverse)

24 23 22 21 20 19 18 17

OE A10

31 30

CS I/O8

29 28

I/O7

I/O6

I/O5

I/O4

VSS

I/O3

I/O2

I/O1

A18

A16 A14

A12

4 5

A7 A6

I/O1

I/O2

I/O3

VSS

GENERAL DESCRIPTION

The K6T4008V1C and K6T4008U1C families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature range and have various package type for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

Power Dissipation

PKG Type

32-SOP 32-TSOP2-F/R 32-TSOP1-F 32-sTSOP1-F

701)/85ns

Standby

(ISB1, Max)

15µA

20µA

Operating

(ICC2, Max)

30mA

FUNCTIONAL BLOCK DIAGRAM

Clk gen.

A0 A1 A4 A5 A6 A7 A12 A14 A16 A18

I/O1 Data I/O8

Control

logic

Row select

cont

Data cont

Precharge circuit.

Memory array 1024 rows 512×8 columns

I/O Circuit

Column select

A2 A3 A8 A9 A10 A13A11

A15

A17

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

Revision 1.0

January 1999

K6T4008V1C, K6T4008U1C Family

PRODUCT LIST

Commercial Temp Products(0~70°C) Industrial Temp Products(-40~85°C)

Part Name Function Part Name Function

K6T4008V1C-GB70 K6T4008V1C-GB85 K6T4008V1C-VB70 K6T4008V1C-VB85 K6T4008V1C-MB70 K6T4008V1C-MB85 K6T4008V1C-TB70 K6T4008V1C-TB85 K6T4008V1C-YB70 K6T4008V1C-YB85

32-SOP, 70ns, 3.3V, LL 32-SOP, 85ns, 3.3V, LL 32-TSOP2-F, 70ns, 3.3V, LL 32-TSOP2-F, 85ns, 3.3V, LL 32-TSOP2-R, 70ns, 3.3V, LL 32-TSOP2-R, 85ns, 3.3V, LL 32-TSOP1-F, 70ns, 3.3V, LL 32-TSOP1-F, 85ns, 3.3V, LL 32-sTSOP1-F, 70ns, 3.3V, LL 32-sTSOP1-F, 85ns, 3.3V, LL

K6T4008V1C-GF70 K6T4008V1C-GF85 K6T4008V1C-VF70 K6T4008V1C-VF85 K6T4008V1C-MF70 K6T4008V1C-MF85 K6T4008V1C-TF70 K6T4008V1C-TF85 K6T4008V1C-YF70 K6T4008V1C-YF85

CMOS SRAM

K6T4008U1C-GB70 K6T4008U1C-GB85 K6T4008U1C-GB10 K6T4008U1C-VB70 K6T4008U1C-VB85 K6T4008U1C-VB10 K6T4008U1C-MB70 K6T4008U1C-MB85 K6T4008U1C-MB10 K6T4008U1C-TB70 K6T4008U1C-TB85 K6T4008U1C-TB10 K6T4008U1C-YB70 K6T4008U1C-YB85 K6T4008U1C-YB10

32-SOP, 70ns, 3.0V, LL 32-SOP, 85ns, 3.0V, LL 32-SOP, 100ns, 3.0V, LL 32-TSOP2-F, 70ns, 3.0V, LL 32-TSOP2-F, 85ns, 3.0V, LL 32-TSOP2-F, 100ns, 3.0V, LL 32-TSOP2-R, 70ns, 3.0V, LL 32-TSOP2-R, 85ns, 3.0V, LL 32-TSOP2-R, 100ns, 3.0V, LL 32-TSOP1-F, 70ns, 3.0V, LL 32-TSOP1-F, 85ns, 3.0V, LL 32-TSOP1-F, 100ns, 3.0V, LL 32-sTSOP1-F, 70ns, 3.0V, LL 32-sTSOP1-F, 85ns, 3.0V, LL 32-sTSOP1-F, 100ns, 3.0V, LL

K6T4008U1C-GF70 K6T4008U1C-GF85 K6T4008U1C-GF10 K6T4008U1C-VF70 K6T4008U1C-VF85 K6T4008U1C-VF10 K6T4008U1C-MF70 K6T4008U1C-MF85 K6T4008U1C-MF10 K6T4008U1C-TF70 K6T4008U1C-TF85 K6T4008U1C-TF10 K6T4008U1C-YF70 K6T4008U1C-YF85 K6T4008U1C-YF10

FUNCTIONAL DESCRIPTION

CS OE WE I/O Mode Power

L H H High-Z Output Disabled Active L L H Dout Read Active L

1. X means don′t care (Must be in low or high state)

L Din Write Active

High-Z Deselected Standby

ABSOLUTE MAXIMUM RATINGS

Item Symbol Ratings Unit Remark

Voltage on any pin relative to Vss VIN,VOUT -0.5 to VCC+0.5 V Voltage on Vcc supply relative to Vss VCC -0.3 to 4.6 V Power Dissipation PD 1.0 W Storage temperature TSTG -65 to 150 °C -

Operating Temperature TA

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

0 to 70 °C K6T4008V1C-L, K6T4008U1C-L

-40 to 85 °C K6T4008V1C-P, K6T4008U1C-P

Revision 1.0

January 1999

+ 7 hidden pages

Samsung K6T4008U1C-TB10, K6T4008U1C-MF85, K6T4008U1C-MB85, K6T4008U1C-MB70, K6T4008U1C-MB10 Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual