Samsung K4E660412D-TC-L, K4E660412D-JC-L, K4E640412D-TC-L, K4E640412D-JC-L Datasheet
CMOS DRAM
K4E660412D,K4E640412D
This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random
access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden
refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 16Mx4 EDO Mode DRAM family is fabricated
using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
• Extended Data Out Mode operation
• CAS-before-RAS refresh capability
• RAS -only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic SOJ and TSOP(II) packages
• +3.3V±0.3V power supply
Control
Clocks
RAS
CAS
W
Vcc
Vss
A0~A12
(A0~A11)*1
A0~A10
(A0~A11)*1
Memory Array
16,777,216 x 4
Cells
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
Note) *1 : 4K Refresh
• Refresh Cycles
Part
NO.
Refresh
cycle
Refresh time
Normal L-ver
K4E660412D* 8K
64ms 128ms
K4E640412D 4K
Unit : mW
Sense Amps & I/O
DQ0
to
DQ3
Data out
Buffer
Data in
Buffer
* Access mode & RAS only refresh mode
: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)
• Active Power Dissipation
Speed 8K 4K
-45 324 432
-50 288 396
-60 252 360
• Performance Range
Speed
tRAC tCAC tRC tHPC
-45 45ns 12ns 74ns 17ns
-50 50ns 13ns 84ns 20ns
-60 60ns 15ns 104ns 25ns
Row Decoder
Column Decoder
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
• Part Identification
- K4E660412D-JC/L(3.3V, 8K Ref., SOJ)
- K4E640412D-JC/L(3.3V, 4K Ref., SOJ)
- K4E660412D-TC/L(3.3V, 8K Ref., TSOP)
- K4E640412D-TC/L(3.3V, 4K Ref., TSOP)
FEATURES
CMOS DRAM
K4E660412D,K4E640412D
VCC
DQ0
DQ1
N.C
N.C
N.C
N.C
W
RAS
A0
A1
A2
A3
A4
A5
VCC
VSS
DQ3
DQ2
N.C
N.C
N.C
CAS
OE
A12(N.C)*
A11
A10
A9
A8
A7
A6
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
PIN CONFIGURATION (Top Views)
* (N.C) : N.C for 4K Refresh product
Pin Name Pin Function
A0 - A12 Address Inputs(8K Product)
A0 - A11 Address Inputs(4K Product)
DQ0 - 3 Data In/Out
VSS Ground
RAS Row Address Strobe
CAS Column Address Strobe
W Read/Write Input
OE Data Output Enable
VCC Power(+3.3V)
N.C No Connection
VCC
DQ0
DQ1
N.C
N.C
N.C
N.C
W
RAS
A0
A1
A2
A3
A4
A5
VCC
VSS
DQ3
DQ2
N.C
N.C
N.C
CAS
OE
A12(N.C)*
A11
A10
A9
A8
A7
A6
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
(T : 400mil TSOP(II))(J : 400mil SOJ)
• K4E660412D-J
• K4E640412D-J
• K4E660412D-T
• K4E640412D-T
CMOS DRAM
K4E660412D,K4E640412D
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Parameter Symbol Rating Units
Voltage on any pin relative to VSS VIN,VOUT -0.5 to +4.6 V
Voltage on VCC supply relative to VSS VCC -0.5 to +4.6 V
Storage Temperature Tstg -55 to +150 °C
Power Dissipation PD 1 W
Short Circuit Output Current IOS Address 50 mA
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70°C)
*1 : Vcc+1.3V at pulse width≤15ns which is measured at VCC
*2 : -1.3 at pulse width≤15ns which is measured at VSS
Parameter Symbol Min Typ Max Units
Supply Voltage VCC 3.0 3.3 3.6 V
Ground VSS 0 0 0 V
Input High Voltage VIH 2.0 -
Vcc+0.3
*1
V
Input Low Voltage VIL
-0.3
*2
- 0.8 V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)
Parameter Symbol Min Max Units
Input Leakage Current (Any input 0≤VIN≤VCC+0.3V,
all other pins not under test=0 Volt)
II(L) -5 5 uA
Output Leakage Current
(Data out is disabled, 0V≤VOUT≤VCC)
IO(L) -5 5 uA
Output High Voltage Level(IOH=-2mA) VOH 2.4 - V
Output Low Voltage Level(IOL=2mA) VOL - 0.4 V
CMOS DRAM
K4E660412D,K4E640412D
*Note :
ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one EDO mode cycle time, tHPC.
DC AND OPERATING CHARACTERISTICS (Continued)
ICC1* : Operating Current (RAS and CAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=CAS=W=VIH)
ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Extended Data Out Mode Current (RAS=VIL, CAS, Address cycling @tHPC=min.)
ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=CAS-before-RAS cycling or 0.2V
W, OE=VIH, Address=Don′t care, DQ=Open, TRC=31.25us
ICCS : Self Refresh Current
RAS=CAS=0.2V, W=OE=A0 ~ A12(A11)=VCC-0.2V or 0.2V, DQ0 ~ DQ3=VCC-0.2V, 0.2V or Open
Symbol Power Speed
Max
Units
K4E660412D K4E640412D
ICC1 Don′t care
-45
-50
-60
90
80
70
120
110
100
mA
mA
mA
ICC2
Normal
L
Don′t care
1
1
1
1
mA
mA
ICC3 Don′t care
-45
-50
-60
90
80
70
120
110
100
mA
mA
mA
ICC4 Don′t care
-45
-50
-60
100
90
80
100
90
80
mA
mA
mA
ICC5
Normal
L
Don′t care
0.5
200
0.5
200
mA
uA
ICC6 Don′t care
-45
-50
-60
120
110
100
120
110
100
mA
mA
mA
ICC7 L Don′t care 350 350 uA
ICCS L Don′t care 350 350 uA
CMOS DRAM
K4E660412D,K4E640412D
CAPACITANCE (TA=25°C, VCC=3.3V, f=1MHz)
Parameter Symbol Min Max Units
Input capacitance [A0 ~ A12] CIN1 - 5 pF
Input capacitance [RAS, CAS, W, OE] CIN2 - 7 pF
Output capacitance [DQ0 - DQ3] CDQ - 7 pF
AC CHARACTERISTICS (0°C≤TA≤70°C, See note 2)
Test condition : VCC=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter Symbol
-45 -50 -60
Units Note
Min Max Min Max Min Max
Random read or write cycle time
tRC
74 84 104 ns
Read-modify-write cycle time
tRWC
101 113 138 ns
Access time from RAS
tRAC
45 50 60 ns 3,4,10,12
Access time from CAS
tCAC
12 13 15 ns 3,4,5,12
Access time from column address
tAA
23 25 30 ns 3,10,12
CAS to output in Low-Z
tCLZ
3 3 3 ns 3
Output buffer turn-off delay from CAS
tCEZ
3 13 3 13 3 13 ns 6,13
OE to output in Low-Z
tOLZ
3 3 3 ns 3
Transition time (rise and fall)
tT
1 50 1 50 1 50 ns 2
RAS precharge time
tRP
25 30 40 ns
RAS pulse width
tRAS
45 10K 50 10K 60 10K ns
RAS hold time
tRSH
8 8 10 ns
CAS hold time
tCSH
35 38 40 ns
CAS pulse width
tCAS
7 5K 8 10K 10 10K ns 16
RAS to CAS delay time
tRCD
11 33 11 37 14 45 ns 4
RAS to column address delay time
tRAD
9 22 9 25 12 30 ns 10
CAS to RAS precharge time
tCRP
5 5 5 ns
Row address set-up time
tASR
0 0 0 ns
Row address hold time
tRAH
7 7 10 ns
Column address set-up time
tASC
0 0 0 ns
Column address hold time
tCAH
7 7 10 ns
Column address to RAS lead time
tRAL
23 25 30 ns
Read command set-up time
tRCS
0 0 0 ns
Read command hold time referenced to CAS
tRCH
0 0 0 ns 8
Read command hold time referenced to RAS
tRRH
0 0 0 ns 8
Write command hold time
tWCH
7 7 10 ns
Write command pulse width
tWP
6 7 10 ns
Write command to RAS lead time
tRWL
8 8 10 ns
Write command to CAS lead time
tCWL
7 7 10 ns
Data set-up time
tDS
0 0 0 ns 9
CMOS DRAM
K4E660412D,K4E640412D
AC CHARACTERISTICS (Continued)
Parameter Symbol
-45 -50 -60
Units Note
Min Max Min Max Min Max
Data hold time
tDH
7 7 10 ns 9
Refresh period (Normal)
tREF
64 64 64 ms
Refresh period (L-ver)
tREF
128 128 128 ms
Write command set-up time
tWCS
0 0 0 ns 7
CAS to W delay time
tCWD
24 27 32 ns 7
RAS to W delay time
tRWD
57 64 77 ns 7
Column address to W delay time
tAWD
35 39 47 ns 7
CAS set-up time (CAS -before-RAS refresh)
tCSR
5 5 5 ns
CAS hold time (CAS -before-RAS refresh)
tCHR
10 10 10 ns
RAS to CAS precharge time
tRPC
5 5 5 ns
Access time from CAS precharge
tCPA
24 28 35 ns 3
Hyper Page cycle time
tHPC
17 20 25 ns 14
Hyper Page read-modify-write cycle time
tHPRWC
47 47 56 ns 14
CAS precharge time (Hyper page cycle)
tCP
6.5 7 10 ns
RAS pulse width (Hyper page cycle)
tRASP
45 200K 50 200K 60 200K ns
RAS hold time from CAS precharge
tRHCP
24 30 35 ns
OE access time
tOEA
12 13 15 ns 3
OE to data delay
tOED
8 10 13 ns
CAS precharge to W delay time
tCPWD
36 41 52 ns
Output buffer turn off delay time from OE
tOEZ
3 11 3 13 3 13 ns 6
OE command hold time
tOEH
5 5 5 ns
Write command set-up time (Test mode in)
tWTS
10 10 10 ns 11
Write command hold time (Test mode in)
tWTH
10 10 10 ns 11
W to RAS precharge time (C-B-R refresh)
tWRP
10 10 10 ns
W to RAS hold time (C-B-R refresh)
tWRH
10 10 10 ns
Output data hold time
tDOH
4 5 5 ns
Output buffer turn off delay from RAS
tREZ
3 13 3 13 3 13 ns 6,13
Output buffer turn off delay from W
tWEZ
3 13 3 13 3 13 ns 6
W to data delay
tWED
8 15 15 ns
OE to CAS hold time
tOCH
5 5 5 ns
CAS hold time to OE
tCHO
5 5 5 ns
OE precharge time
tOEP
5 5 5 ns
W pulse width (Hyper Page Cycle)
tWPE
5 5 5 ns
RAS pulse width (C-B-R self refresh)
tRASS
100 100 100 us 15,16,17
RAS precharge time (C-B-R self refresh)
tRPS
74 90 110 ns 15,16,17
CAS hold time (C-B-R self refresh)
tCHS
-50 -50 -50 ns 15,16,17
CMOS DRAM
K4E660412D,K4E640412D
TEST MODE CYCLE
Parameter Symbol
-45 -50 -60
Units Note
Min Max Min Max Min Max
Random read or write cycle time
tRC
79 89 109 ns
Read-modify-write cycle time
tRWC
110 121 145 ns
Access time from RAS
tRAC
50 55 65 ns 3,4,10,12
Access time from CAS
tCAC
17 18 20 ns 3,4,5,12
Access time from column address
tAA
28 30 35 ns 3,10,12
RAS pulse width
tRAS
50 10K 55 10K 65 10K ns
CAS pulse width
tCAS
12 10K 13 10K 15 10K ns
RAS hold time
tRSH
18 18 20 ns
CAS hold time
tCSH
39 43 50 ns
Column Address to RAS lead time
tRAL
28 30 35 ns
CAS to W delay time
tCWD
29 35 39 ns 7
RAS to W delay time
tRWD
62 72 84 ns 7
Column Address to W delay time
tAWD
40 47 54 ns 7
Hyper Page cycle time
tHPC
22 25 30 ns 14
Hyper Page read-modify-write cycle time
tHPRWC
52 53 61 ns 14
RAS pulse width (Hyper page cycle)
tRASP
50 200K 55 200K 65 200K ns
Access time from CAS precharge
tCPA
29 33 40 ns 3
OE access time
tOEA
17 18 20 ns 3
OE to data delay
tOED
13 18 20 ns
OE command hold time
tOEH
13 18 20 ns
( Note 11 )
Loading...