SAMSUNG K4B4G0446B Technical data

4Gb B-die DDR3 SDRAM

http://www.BDTIC.com/Samsung

78FBGA with Lead-Free & Halogen-Free
(RoHS compliant)

Rev. 1.1, May. 2011

K4B4G0446B
K4B4G0846B

datasheet

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SPECIFICATIONS WITHOUT NOTICE.

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ⓒ 2011 Samsung Electronics Co., Ltd. All rights reserved.

- 1 -

Rev. 1.1

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K4B4G0446B

K4B4G0846B datasheet DDR3 SDRAM

Revision History

Revision No. History Draft Date Remark Editor

1.0 - First SPEC release Apr. 2011 - J.Y.Lee

1.1 - Corrected typo for IDD current specification "IDD4W" May. 2011 - J.Y.Lee

- 2 -

Rev. 1.1

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K4B4G0446B

K4B4G0846B datasheet DDR3 SDRAM

Table Of Contents

4Gb B-die DDR3 SDRAM

1. Ordering Information .....................................................................................................................................................5

2. Key Features.................................................................................................................................................................5

3. Package pinout/Mechanical Dimension & Addressing.................................................................................................. 6

3.1 x4 Package Pinout (Top view) : 78ball FBGA Package ..........................................................................................6

3.2 x8 Package Pinout (Top view) : 78ball FBGA Package ..........................................................................................7

3.3 FBGA Package Dimension (x4/x8).......................................................................................................................... 8

4. Input/Output Functional Description..............................................................................................................................9

5. DDR3 SDRAM Addressing ...........................................................................................................................................10

6. Absolute Maximum Ratings ..........................................................................................................................................11

6.1 Absolute Maximum DC Ratings............................................................................................................................... 11

6.2 DRAM Component Operating Temperature Range ................................................................................................ 11

7. AC & DC Operating Conditions.....................................................................................................................................11

7.1 Recommended DC operating Conditions (SSTL_1.5)............................................................................................. 11

8. AC & DC Input Measurement Levels ............................................................................................................................12

8.1 AC & DC Logic input levels for single-ended signals .............................................................................................. 12

8.2 V

8.3 AC & DC Logic Input Levels for Differential Signals ............................................................................................... 14

8.4 Differential Input Cross Point Voltage......................................................................................................................16

8.5 Slew rate definition for Differential Input Signals .....................................................................................................16

8.6 Slew rate definitions for Differential Input Signals ................................................................................................... 16

9. AC & DC Output Measurement Levels .........................................................................................................................17

9.1 Single-ended AC & DC Output Levels.....................................................................................................................17

9.2 Differential AC & DC Output Levels......................................................................................................................... 17

9.3 Single-ended Output Slew Rate .............................................................................................................................. 17

9.4 Differential Output Slew Rate ..................................................................................................................................18

9.5 Reference Load for AC Timing and Output Slew Rate ............................................................................................ 18

9.6 Overshoot/Undershoot Specification .......................................................................................................................19

9.7 34ohm Output Driver DC Electrical Characteristics................................................................................................. 20

9.8 On-Die Termination (ODT) Levels and I-V Characteristics ..................................................................................... 21

9.9 ODT Timing Definitions ........................................................................................................................................... 24

10. IDD Current Measure Method.....................................................................................................................................27

10.1 IDD Measurement Conditions ...............................................................................................................................27

11. 4Gb DDR3 SDRAM B-die IDD Specification Table ....................................................................................................36

12. Input/Output Capacitance ...........................................................................................................................................37

13. Electrical Characteristics and AC timing for DDR3-800 to DDR3-1

13.1 Clock Specification ................................................................................................................................................ 38

13.2 Refresh Parameters by Device Density................................................................................................................. 39

13.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin ................................................................. 39

Tolerances......................................................................................................................................................13

REF

8.3.1. Differential signals definition ............................................................................................................................ 14

8.3.2. Differential swing requirement for clock (CK - CK

8.3.3. Single-ended requirements for differential signals ...........................................................................................15

9.6.1. Address and Control Overshoot and Undershoot specifications...................................................................... 19

9.6.2. Clock, Data, Strobe and Mask Overshoot and Undershoot Specifications ...................................................... 19

9.7.1. Output Drive Temperature and Voltage Sensitivity .......................................................................................... 21

9.8.1. ODT DC Electrical Characteristics ...................................................................................................................22

9.8.2. ODT Temperature and Voltage sensitivity ...................................................................................................... 23

9.9.1. Test Load for ODT Timings.............................................................................................................................. 24

9.9.2. ODT Timing Definitions.................................................................................................................................... 24

13.1.1. Definition for tCK(avg).................................................................................................................................... 38

13.1.2. Definition for tCK(abs).................................................................................................................................... 38

13.1.3. Definition for tCH(avg) and tCL(avg).............................................................................................................. 38

13.1.4. Definition for note for tJIT(per), tJIT(per, Ick) ................................................................................................. 38

13.1.5. Definition for tJIT(cc), tJIT(cc, Ick) ................................................................................................................. 38

13.1.6. Definition for tERR(nper)................................................................................................................................ 38

13.3.1. Speed Bin Table Notes .................................................................................................................................. 43

) and strobe (DQS - DQS) .................................................. 14

866 ......................................................................38

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K4B4G0446B

K4B4G0846B datasheet DDR3 SDRAM

14. Timing Parameters by Speed Grade ..........................................................................................................................44

14.1 Jitter Notes ............................................................................................................................................................ 50

14.2 Timing Parameter Notes........................................................................................................................................ 51

14.3 Address/Command Setup, Hold and Derating : .................................................................................................... 52

14.4 Data Setup, Hold and Slew Rate Derating : .......................................................................................................... 59

- 4 -

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K4B4G0446B

K4B4G0846B datasheet DDR3 SDRAM

1. Ordering Information

[ Table 1 ] Samsung 4Gb DDR3 B-die ordering information table

Organization

1Gx4 K4B4G0446B-HCF8 K4B4G0446B-HCH9 K4B4G0446B-HCK0 K4B4G0446B-HCMA 78 FBGA

512Mx8 K4B4G0846B-HCF8 K4B4G0846B-HCH9 K4B4G0846B-HCK0 K4B4G0846B-HCMA 78 FBGA

NOTE :

1. Speed bin is in order of CL-tRCD-tRP.

2. Backward compatible to DDR3-1600(11-11-11), DDR3-1333(9-9-9), DDR3-1066(7-7-7)

3. Backward compatible to DDR3-1333(9-9-9), DDR3-1066(7-7-7)

4. Backward compatible to DDR3-1066(7-7-7)

DDR3-1066 (7-7-7)

DDR3-1333 (9-9-9)

4

DDR3-1600 (11-11-11)

3

DDR3-1866 (13-13-13)

2

Package

2. Key Features

[ Table 2 ] 4Gb DDR3 B-die Speed bins

Speed

tCK(min) 2.5 1.875 1.5 1.25 1.07 ns

CAS Latency 6 7 9 11 13 nCK

tRCD(min) 15 13.125 13.5 13.75 13.91 ns

tRP(min) 15 13.125 13.5 13.75 13.91 ns

tRAS(min) 37.5 37.5 36 35 34 ns

tRC(min) 52.5 50.625 49.5 48.75 47.91 ns

DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866

6-6-6 7-7-7 9-9-9 11-11- 11 13-13-13

Unit

• JEDEC standard 1.5V ± 0.075V Power Supply

•V

• 400 MHz f

• 8 Banks

• Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,12,13

• Programmable Additive Latency: 0, CL-2 or CL-1 clock

• Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6

• 8-bit pre-fetch

• Burst Length: 8 (Interleave without any limit, sequential with starting

• Bi-directional Differential Data-Strobe

• Internal(self) calibration : Internal self calibration through ZQ pin

• On Die Termination using ODT pin

• Average Refresh Period 7.8us at lower than T

• Asynchronous Reset

• Package : 78 balls FBGA - x4/x8

• All of Lead-Free products are compliant for RoHS

• All of products are Halogen-free

= 1.5V ± 0.075V

DDQ

for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin,
667MHz f
900MHz f

(DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600) and 9(DDR3-1866)

address “000” only), 4 with tCCD = 4 which does not allow seamless
read or write [either On the fly using A12 or MRS]

(RZQ : 240 ohm ± 1%)

85°C < T

CK

for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin,

CK

for 1866Mb/sec/pin

CK

85°C, 3.9us at

CASE

CASE

< 95 °C

The 4Gb DDR3 SDRAM B-die is organized as a 128Mbit x 4 I/Os x 8banks

or 64Mbit x 8 I/Os x 8banks device. This synchronous device achieves high

speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3-

1866) for general applications.

The chip is designed to comply with the following key DDR3 SDRAM fea-

tures such as posted CAS, Programmable CWL, Internal (Self) Calibration,

On Die Termination using ODT pin and Asynchronous Reset .

All of the control and address inputs are synchronized with a pair of exter-

nally supplied differential clocks. Inputs are latched at the crosspoint of dif-

ferential clocks (CK rising and CK

pair of bidirectional strobes (DQS and DQS

ion. The address bus is used to convey row, column, and bank address

information in a RAS

with a single 1.5V ± 0.075V power supply and 1.5V ± 0.075V V

The 4Gb DDR3 B-die device is available in 78ball FBGAs(x4/x8).

/CAS multiplexing style. The DDR3 device operates

falling). All I/Os are synchronized with a

) in a source synchronous fash-

.

DDQ

NOTE : 1. This data sheet is an abstract of full DDR3 specification and does not cover the common features which are described in “DDR3 SDRAM Device Operation & Timing

Diagram”.

2. The functionality described and the timing specifications included in this data sheet are for the DLL Enabled mode of operation.

- 5 -

Rev. 1.1

Populated ball
Ball not populated

Ball Locations (x4)

Top view

(See the balls through the package)

1234 89567

A

B

C

D

E

F

G

H

J

K

L

N

M

http://www.BDTIC.com/Samsung

K4B4G0446B

K4B4G0846B datasheet DDR3 SDRAM

3. Package pinout/Mechanical Dimension & Addressing

3.1 x4 Package Pinout (Top view) : 78ball FBGA Package

1 2 3 4 5 6 7 8 9

A

B

C

D

E

V

V

V

V

V

REFDQ

SS

SS

DDQ

SSQ

F NC

G ODT

V

DD

V

SSQ

NC NC

DQ0 DM

V

V

SSQ

DQ2 DQS DQ1 DQ3

NC DQS

V

DDQ

V

SS

V

DD

RAS CK

CAS CK

V

DD

NC NC NC

V

V

V

SS

SS

SS

DD

V

DD

V

DDQ

V

SSQ

V

SSQ

V

DDQ

NC F

CKE G

H NC CS WE A10/AP ZQ NC H

J

K

L

M

N

V

SS

V

DD

V

SS

V

DD

V

SS

BA0 BA2 A15

A3 A0 A12/BC BA1

A5 A2 A1 A4

A7 A9 A11 A6

RESET A13 A14 A8

V

REFCA

V

SS

V

DD

V

SS

V

DD

V

SS

A

B

C

D

E

J

K

L

M

N

- 6 -

Rev. 1.1

Ball Locations (x8)

Populated ball
Ball not populated

Top view

(See the balls through the package)

1234 89567

A

B

C

D

E

F

G

H

J

K

L

N

M

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K4B4G0446B

K4B4G0846B datasheet DDR3 SDRAM

3.2 x8 Package Pinout (Top view) : 78ball FBGA Package

1 2 3 4 5 6 7 8 9

A

B

C

D

E

V

V

V

V

V

REFDQ

SS

SS

DDQ

SSQ

F NC

G ODT

V

DD

V

SSQ

NC NU/TDQS

DQ0 DM/TDQS

V

V

SSQ

DQ2 DQS DQ1 DQ3

DQ6 DQS

V

V

V

DDQ

SS

DD

DQ4 DQ7 DQ5

RAS CK

CAS CK

V

DD

V

V

V

SS

SS

SS

DD

V

DD

V

DDQ

V

SSQ

V

SSQ

V

DDQ

NC F

CKE G

H NC CS WE A10/AP ZQ NC H

J

K

L

M

N

V

SS

V

DD

V

SS

V

DD

V

SS

BA0 BA2 A15

A3 A0 A12/BC BA1

A5 A2 A1 A4

A7 A9 A11 A6

RESET A13 A14 A8

V

REFCA

V

SS

V

DD

V

SS

V

DD

V

SS

A

B

C

D

E

J

K

L

M

N

- 7 -

Rev. 1.1

A
B
C
D
E
F
G
H

M
N

0.80 x 12 = 9.60

3.20

0.80

4.80

78 - ∅0.45 Solder ball

0.2 ABM

(Datum B)

(Datum A)

0.10MAX

1.10 ± 0.10

#A1

1.60

10.00 ± 0.10

11. 00 ± 0.10

MOLDING AREA

0.35 ± 0.05

#A1 INDEX MARK

B

BOTTOM VIEW

TOP VIEW

11.00 ± 0.10

J
K
L

0.80

0.80

(Post Reflow ∅0.50 ± 0.05)

(0.95)

(1.90)

Units : Millimeters

876543219

x 8 = 6.40

A

0.80

10.00 ± 0.10

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K4B4G0446B

K4B4G0846B datasheet DDR3 SDRAM

3.3 FBGA Package Dimension (x4/x8)

- 8 -

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K4B4G0446B

K4B4G0846B datasheet DDR3 SDRAM

4. Input/Output Functional Description

[ Table 3 ] Input/Output function description

Symbol Typ e Function

CK, CK

CKE Input

CS

ODT Input

, CAS, WE Input Command Inputs: RAS, CAS and WE (along with CS) define the command being entered.

RAS

DM

(DMU), (DML)

BA0 - BA2 Input

A0 - A15 Input

A10 / AP Input

A12 / BC

RESET

DQ Input/Output Data Input/ Output: Bi-directional data bus.

DQS, (DQS

TDQS, (TDQS

V

V

) Input/Output

NC No Connect: No internal electrical connection is present.

V

DDQ

V

SSQ

V

DD

V

SS

REFDQ

REFCA

ZQ Supply Reference Pin for ZQ calibration

Input

Input

Input

Input

Input

)Output

Supply DQ Power Supply: 1.5V +/- 0.075V

Supply DQ Ground

Supply Power Supply: 1.5V +/- 0.075V

Supply Ground

Supply Reference voltage for DQ

Supply Reference voltage for CA

NOTE : Input only pins (BA0-BA2, A0-A15, RAS, CAS, WE, CS, CKE, ODT and RESET) do not supply termination.

Clock: CK and CK

the positive edge of CK and negative edge of CK

Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device input buffers and
output drivers. Taking CKE Low provides Precharge Power-Down and Self Refresh operation (all banks idle), or
Active Power-Down (Row Active in any bank). CKE is asynchronous for self refresh exit. After V

stable during the power on and initialization sequence, it must be maintained during all operations (including Self­Refresh). CKE must be maintained high throughout read and write accesses. Input buffers, excluding CK, CK
and CKE are disabled during power-down. Input buffers, excluding CKE, are disabled during Self -Refresh.

Chip Select: All commands are masked when CS
systems with multiple Ranks. CS

On Die Termination: ODT (registered HIGH) enables termination resistance internal to the DDR3 SDRAM. When
enabled, ODT is only applied to each DQ, DQS, DQS
Register A11=1 in MR1) signal for x8 configurations. The ODT pin will be ignored if the Mode Register (MR1) is pro­grammed to disable ODT.

Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH coinci­dent with that input data during a Write access. DM is sampled on both edges of DQS. For x8 device, the function of
DM or TDQS/TDQS

Bank Address Inputs: BA0 - BA2 define to which bank an Active, Read, Write or Precharge command is being
applied. Bank address also determines if the mode register or extended mode register is to be accessed during a
MRS cycle.

Address Inputs: Provided the row address for Active commands and the column address for Read/Write commands
to select one location out of the memory array in the respective bank. (A10/AP and A12/BC
see below)
The address inputs also provide the op-code during Mode Register Set commands.

Autoprecharge: A10 is sampled during Read/Write commands to determine whether Autoprecharge should be per­formed to the accessed bank after the Read/Write operation. (HIGH:Autoprecharge; LOW: No Autoprecharge)
A10 is sampled during a Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or
all banks (A10 HIGH). if only one bank is to be precharged, the bank is selected by bank addresses.

Burst Chop:A12 is sampled during Read and Write commands to determine if burst chop(on-the-fly) will be per­formed. (HIGH : no burst chop, LOW : burst chopped). See command truth table for details

Active Low Asynchronous Reset: Reset is active when RESET

must be HIGH during normal operation. RESET is a CMOS rail to rail signal with DC high and low at 80% and

RESET
20% of V

Data Strobe: Output with read data, input with write data. Edge-aligned with read data, centered in write data. For the
x16, DQSL: corresponds to the data on DQL0-DQL7; DQSU corresponds to the data on DQU0-DQU7. The data
strobe DQS, DQSL and DQSU are paired with differential signals DQS, DQSL and DQSU, respectively, to provide dif­ferential pair signaling to the system during reads and writes. DDR3 SDRAM supports differential data strobe only and
does not support single-ended.

Termination Data Strobe: TDQS/TDQS
MR1, DRAM will enable the same termination resistance function on TDQS/TDQS
disabled via mode register A11=0 in MR1, DM/TDQS will provide the data mask function and TDQS
x16 DRAMs must disable the TDQS function via mode register A11=0 in MR1.

DD

are differential clock inputs. All address and control input signals are sampled on the crossing of

. Output (read) data is referenced to the crossings of CK and CK

REFCA

is registered HIGH. CS provides for external Rank selection on

is considered part of the command code.

and DM/TDQS, NU/TDQS (When TDQS is enabled via Mode

is enabled by Mode Register A11 setting in MR1.

have additional functions,

is LOW, and inactive when RESET is HIGH.

, i.e. 1.20V for DC high and 0.30V for DC low.

is applicable for X8 DRAMs only. When enabled via Mode Register A11=1 in

that is applied to DQS/DQS. When

is not used. x4/

has become

, ODT

- 9 -

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K4B4G0446B

K4B4G0846B datasheet DDR3 SDRAM

5. DDR3 SDRAM Addressing

1Gb

Configuration 256Mb x 4 128Mb x 8 64Mb x 16

# of Bank 8 8 8

Bank Address BA0 - BA2 BA0 - BA2 BA0 - BA2

2Gb

Auto precharge A

Row Address A

Column Address A0 - A9,A11 A0 - A9 A0 - A9

BC switch on the fly A12/BC A12/BC A12/BC

Page size

Configuration 512Mb x 4 256Mb x 8 128Mb x 16

# of Bank 8 8 8

Bank Address BA0 - BA2 BA0 - BA2 BA0 - BA2

Auto precharge A

Row Address A

Column Address A0 - A9,A11 A0 - A9 A0 - A9

BC switch on the fly A12/BC A12/BC A12/BC

Page size

*1

*1

10/AP A10/AP A10/AP

0 - A13 A0 - A13 A0 - A12

1 KB 1 KB 2 KB

10/AP A10/AP A10/AP

0 - A14 A0 - A14 A0 - A13

1 KB 1 KB 2 KB

4Gb

Configuration 1Gb x 4 512Mb x 8 256Mb x 16

# of Bank 8 8 8

Bank Address BA0 - BA2 BA0 - BA2 BA0 - BA2

Auto precharge A

Row Address A

Column Address A0 - A9,A11 A0 - A9 A0 - A9

BC switch on the fly A12/BC A12/BC A12/BC

Page size

*1

10/AP A10/AP A10/AP

0 - A15 A0 - A15 A0 - A14

1 KB 1 KB 2 KB

8Gb

Configuration 2Gb x 4 1Gb x 8 512Mb x 16

# of Bank 8 8 8

Bank Address BA0 - BA2 BA0 - BA2 BA0 - BA2

Auto precharge A

Row Address A

Column Address A0 - A9,A11 ,A13 A0 - A9,A11 A0 - A9

BC switch on the fly A12/BC A12/BC A12/BC

Page size

NOTE 1 : Page size is the number of bytes of data delivered from the array to the internal sense amplifiers when an ACTIVE command is registered.
Page size is per bank, calcula

where, COLBITS = the number of column address bits, ORG = the number of I/O (DQ) bits

*1

ted as follows: page size = 2

10/AP A10/AP A10/AP

0 - A15 A0 - A15 A0 - A15

2 KB 2 KB 2 KB

COLBITS

* ORG÷8

- 10 -

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K4B4G0446B

K4B4G0846B datasheet DDR3 SDRAM

6. Absolute Maximum Ratings

6.1 Absolute Maximum DC Ratings

[ Table 4 ] Absolute Maximum DC Ratings

Symbol Parameter Rating Units NOTE

V

DD

Voltage on V

V

DDQ

V

NOTE :

1. Stresses greater than those listed under “Absolute Maximum Ratings” may
device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.

2. Storage Temperature is the case surface temperature on the cente

3. V

DD

equal to or less than 300mV.

Voltage on any pin relative to Vss -0.4 V ~ 1.975 V V 1

IN, VOUT

Storage Temperature -55 to +100 °C 1, 2

T

STG

and V

DDQ

Voltage on VDD pin relative to Vss -0.4 V ~ 1.975 V V 1,3

pin relative to Vss -0.4 V ~ 1.975 V V 1,3

DDQ

cause permanent damage to the device. This is a stress rating only and functional operation of the

must be within 300mV of each other at all times; and V

r/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.

must be not greater than 0.6 x V

REF

, When VDD and V

DDQ

are less than 500mV; V

DDQ

REF

may be

6.2 DRAM Component Operating Temperature Range

[ Table 5 ] Temperature Range

Symbol Parameter rating Unit NOTE

T

OPER

NOTE :

1. Operating Temperature T

JESD51-2.

2. The Normal Temperature Range specifies the temperatures where a
tained between 0-85°C u

3. Some applications require operation of the Extended Temperature Range between 85°C an
following additional conditions apply:

a) Refresh commands must be doubled in frequency, theref
b) If Self-Refresh operation is required in the Extended Temperature

Range capability (MR2 A6 = 0

is the case surface temperature on the center/top side of the DRAM. For measurement conditions, please refer to the JEDEC document

OPER

nder all operating conditions

Operating Temperature Range 0 to 95 °C 1, 2, 3

ll DRAM specifications will be supported. During operation, the DRAM case temperature must be main-

d 95°C case temperature. Full specifications are guaranteed in this range, but the

ore reducing the refresh interval tREFI to 3.9us.

and MR2 A7 = 1b), in this case IDD6 current can be increased around 10~20% than normal Temperature range.

b

Range, then it is mandatory to either use the Manual Self-Refresh mode with Extended Temperature

7. AC & DC Operating Conditions

7.1 Recommended DC operating Conditions (SSTL_1.5)

[ Table 6 ] Recommended DC Operating Conditions

Symbol Parameter

V

DD

V

DDQ

NOTE :

1. Under all conditions V

2. V

tracks with VDD. AC parameters are measured with VDD and V

DDQ

Supply Voltage 1.425 1.5 1.575 V 1,2

Supply Voltage for Output 1.425 1.5 1.575 V 1,2

must be less than or equal to VDD.

DDQ

tied together.

DDQ

Min. Typ. Max.

Rating

Units NOTE

- 11 -

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K4B4G0446B

K4B4G0846B datasheet DDR3 SDRAM

8. AC & DC Input Measurement Levels

8.1 AC & DC Logic input levels for single-ended signals

[ Table 7 ] Single-ended AC & DC input levels for Command and Address

Symbol Parameter

V

(DC100)

IH.CA

(DC100)

V

IL.CA

V

(AC175)

IH.CA

(AC175)

V

IL.CA

(AC150)

V

IH.CA

(AC150)

V

IL.CA

V

(AC135)

IH.CA

(AC135)

V

IL.CA

(AC125)

V

IH.CA

(AC125)

V

IL.CA

V

REFCA

NOTE :

1. For input only pins except RESET

2. See ’Overshoot/Undershoot Specification’ on page 19.

3. The AC peak noise on V

4. For reference : approx. V

5. V

(dc) is used as a simplified symbol for V

IH

(dc) is used as a simplified symbol for V

6. V

IL

7. V

(ac) is used as a simplified symbol for V

IH

used when VREF + 150mV is referenced.

(ac) is used as a simplified symbol for V

8. V

IL

when V

REF

DC input logic high

DC input logic low

AC input logic high

AC input logic low Note 2

AC input logic high

AC input logic low Note 2

AC input logic high - -

AC input logic low - - Note 2

AC input logic high - -

AC input logic low - - Note 2

Reference Voltage for

(DC)

ADD, CMD inputs

, V

= V

REF

REFCA

may not allow V

REF

/2 ± 15mV

DD

- 150mV is referenced.

REF

IH.CA

IL.CA

IH.CA

IL.CA

DDR3-800/1066/1333/1600 DDR3-1866

Min. Max. Min. Max.

V

+ 100 V

REF

V

SS

V

+ 175

REF

V

+150

REF

0.49*V

DD

(DC)

to deviate from V

(DC100)

(DC100)

(AC175) and V

(AC175) and V

DD

V

- 100 V

REF

Note 2 - - mV 1,2,7

V

- 175

REF

Note 2 - - mV 1,2,7

V

-150

REF

0.51*V

DD

(DC) by more than ± 1% VDD (for reference : approx. ± 15mV)

REF

IH.CA

IL.CA

(AC150); V

(AC150); V

(AC175) value is used when V

IH.CA

(AC175) value is used when V

IL.CA

V

+ 100 V

REF

SS

- - mV 1,2,8

- - mV 1,2,8

V

+ 135

REF

V

+125

REF

0.49*V

DD

+ 175mV is referenced and V

REF

- 175mV is referenced and V

REF

Unit NOTE

DD

V

- 100

REF

mV 1,5

mV 1,6

Note 2 mV 1,2,7

V

REF

- 135

mV 1,2,8

Note 2 mV 1,2,7

V

REF

0.51*V

-125

DD

IL.CA

mV 1,2,8

V3,4

(AC150) value is

IH.CA

(AC150) value is used

[ Table 8 ] Single-ended AC & DC input levels for DQ and DM

Symbol Parameter

V

(DC100)

IH.DQ

V

(DC100)

IL.DQ

(AC175)

V

IH.DQ

(AC175)

V

IL.DQ

(AC150)

V

IH.DQ

V

(AC150)

IL.DQ

(AC135)

V

IH.DQ

(AC135)

V

IL.DQ

V

REF

DQ

NOTE :

1. For input only pins except RESET

2. See ’Overshoot/Undershoot Specification’ on page 19.

3. The AC peak noise on V

4. For reference : approx. V

(dc) is used as a simplified symbol for V

5. V

IH

6. V

(dc) is used as a simplified symbol for V

IL

(ac) is used as a simplified symbol for V

7. V

IH

when V

8. V

(ac) is used as a simplified symbol for V

IL

V

- 150mV is referenced.

REF

DC input logic high

DC input logic low

AC input logic high

AC input logic low NOTE 2

AC input logic high

AC input logic low NOTE 2

AC input logic high - - - -

AC input logic low - - - - NOTE 2

Reference Voltage for DQ,

(DC)

DM inputs

, V

= V

REF

REFDQ

REF

DD

+ 150mV is referenced.

REF

may not allow V

/2 ± 15mV

to deviate from V

REF

(DC100)

IH.DQ

(DC100)

IL.DQ

IH.DQ

(AC175), V

IL.DQ

DDR3-800/1066 DDR3-1333/1600 DDR3-1866

Min. Max. Min. Max. Min. Max.

V

+ 100 V

REF

V

SS

V

+ 175

REF

V

+ 150

REF

0.49*V

DD

(DC)

REF

(AC175), V

IH.DQ

IL.DQ

(AC150) ; V

(AC150) ; V

Unit NOTE

DD

V

- 100 V

REF

+ 100 V

REF

SS

DD

V

- 100 V

REF

V

+ 100 V

REF

SS

DD

V

- 100

REF

mV 1,5

mV 1,6

V

NOTE 2----mV1,2,7

V

- 175

REF

NOTE 2

V

- 150

REF

0.51*V

DD

(DC) by more than ± 1% VDD (for reference : approx. ± 15mV)

(AC175) value is used when V

IH.DQ

(AC175) value is used when V

IL.DQ

----mV1,2,8

V

+ 150

REF

NOTE 2

0.49*V

DD

NOTE 2 - - mV 1,2,7

V

- 150

REF

0.51*V

DD

+ 175mV is referenced, V

REF

- 175mV is referenced, V

REF

- - mV 1,2,8

V

+ 135

REF

0.49*V

DD

NOTE 2 mV 1,2,7

V

- 135

REF

0.51*V

DD

(AC150) value is used

IH.DQ

(AC150) value is used when

IL.DQ

mV 1,2,8

V3,4

- 12 -

Rev. 1.1

voltage

V

DD

V

SS

time

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K4B4G0846B datasheet DDR3 SDRAM

8.2 V

The dc-tolerance limits and ac-noise limits for the reference voltages V

V

REF

V

REF

page 12. Furthermore V

Tolerances

REF

(t) as a function of time. (V

(DC) is the linear average of V

REF

(t) may temporarily deviate from V

REF

stands for V

(t) over a very long period of time (e.g. 1 sec). This average has to meet the min/max requirement in Table 7 on

REF

REFCA

and V

likewise).

REFDQ

(DC) by no more than ± 1% VDD.

REF

REFCA

and V

are illustrate in Figure 1. It shows a valid reference voltage

REFDQ

Figure 1. Illustration of V

The voltage levels for setup and hold time measurements VIH(AC), VIH(DC), VIL(AC) and VIL(DC) are dependent on V

" shall be understood as V

"V

REF

This clarifies, that dc-variations of V

which setup and hold is measured. System timing and voltage budgets need to account for V

data-eye of the input signals.

This also clarifies that the DRAM setup/hold specification and derating values need to include time and voltage associated with V

and voltage effects due to ac-noise on V

(DC), as defined in Figure 1 .

REF

affect the absolute voltage a signal has to reach to achieve a valid high or low level and therefore the time to

REF

up to the specified limit (+/-1% of VDD) are included in DRAM timings and their associated deratings.

REF

(DC) tolerance and VREF ac-noise limits

REF

(DC) deviations from the optimum position within the

REF

REF

.

ac-noise. Timing

REF

- 13 -

Rev. 1.1

0.0

tDVAC

V

IH

.DIFF.MIN

half cycle

Differential Input Voltage (i.e. DQS-DQS, CK-CK)

time

tDVAC

VIH.DIFF.AC.MIN

V

IL

.DIFF.MAX

V

IL

.DIFF.AC.MAX

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K4B4G0846B datasheet DDR3 SDRAM

8.3 AC & DC Logic Input Levels for Differential Signals

8.3.1 Differential signals definition

Figure 2. Definition of differential ac-swing and "time above ac level" tDVAC

8.3.2 Differential swing requirement for clock (CK - CK) and strobe (DQS - DQS)

[ Table 9 ] Differential AC & DC Input Levels

Symbol Parameter

V

IHdiff

V

ILdiff

(AC)

V

IHdiff

V

(AC)

ILdiff

NOTE :

1. Used to define a differential signal slew-rate.

2. for CK - CK

level is used for a signal group, then the reduced level applies also here.

3. These values are not defined, however they single-ended signals CK, CK

V

use VIH/VIL(AC) of ADD/CMD and V

(DC)min) for single-ended signals as well as the limitations for overshoot and undershoot. Refer to "overshoot and Undershoot Specification"

IL

differential input high +0.2 NOTE 3 V 1

differential input low NOTE 3 -0.2 V 1

differential input high ac

2 x (VIH(AC) - V

differential input low ac NOTE 3

; for DQS - DQS, DQSL - DQSL, DQSU - DQSU use VIH/VIL(AC) of DQs and V

REFCA

[ Table 10 ] Allowed time before ringback (tDVAC) for CK - CK and DQS - DQS

tDVAC [ps] @ |V

Slew Rate [V/ns]

> 4.0 75 - 175 - TBD - TBD -

= 350mV

min max min max min max min max

IH/Ldiff

(AC)|

tDVAC [ps] @ |V

4.0 57 - 170 - TBD - TBD -

3.0 50 - 167 - TBD - TBD -

2.0 38 - 163 - TBD - TBD -

1.8 34 - 162 - TBD - TBD -

1.6 29 - 161 - TBD - TBD -

1.4 22 - 159 - TBD - TBD -

1.2 13 - 155 - TBD - TBD -

1.0 0 - 150 - TBD - TBD -

< 1.0 0 - 150 - TBD - TBD -

DDR3-800/1066/1333/1600/1866

min max

)

REF

, DQS, DQS, DQSL, DQSL, DQSU, DQSU need to be within the respective limits (VIH(DC) max,

IH/Ldiff

(AC)|

tDVAC [ps] @ |V

= 300mV

NOTE 3 V 2

2 x (VIL(AC) - V

REF

IH/Ldiff

)

(AC)|

= 270mV

unit NOTE

; if a reduced ac-high or ac-low

REFDQ

tDVAC [ps] @ |V

V2

(AC)|

IH/Ldiff

= 250mV

- 14 -

Rev. 1.1

VDD or V

DDQ

V

SEH

min

V

DD

/2 or V

DDQ

/2

V

SEL

max

V

SEH

VSS or V

SSQ

V

SEL

CK or DQS

time

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8.3.3 Single-ended requirements for differential signals

Each individual component of a differential signal (CK, DQS, DQSL, DQSU, CK, DQS, DQSL, or DQSU) has also to comply with certain requirements for
single-ended signals.
CK and CK

half-cycle.
DQS, DQSL, DQSU, DQS

proceeding and following a valid transition.
Note that the applicable ac-levels for ADD/CMD and DQ’s might be different per speed-bin etc. E.g. if V

nals, then these ac-levels apply also for the single-ended signals CK and CK

have to approximately reach V

, DQSL have to reach V

SEH

min / V

SEH

max [approximately equal to the ac-levels { VIH(AC) / VIL(AC)} for ADD/CMD signals] in every

SEL

min / V

max [approximately the ac-levels { VIH(AC) / VIL(AC)} for DQ signals] in every half-cycle

SEL

150(AC)/VIL150(AC) is used for ADD/CMD sig-

IH

.

Figure 3. Single-ended requirement for differential signals

Note that while ADD/CMD and DQ signal requirements are with respect to V

with respect to V

ended components of differential signals the requirement to reach V

/2; this is nominally the same. The transition of single-ended signals through the ac-levels is used to measure setup time. For single-

DD

SEL

mode characteristics of these signals.

[ Table 11 ] Single-ended levels for CK, DQS, DQSL, DQSU, CK

, DQS, DQSL, or DQSU

Symbol Parameter

V

SEH

V

SEL

NOTE :

1. For CK, CK

2. V

IH

reduced level applies also here

3. These values are not defined, however the single-ended signals CK, CK

limits (V

Specification"

use VIH/VIL(AC) of ADD/CMD; for strobes (DQS, DQS, DQSL, DQSL, DQSU, DQSU) use VIH/VIL(AC) of DQs.

(AC)/VIL(AC) for DQs is based on V

(DC) max, VIL(DC)min) for single-ended signals as well as the limitations for overshoot and undershoot. Refer to "Overshoot and Undershoot

IH

Single-ended high-level for strobes

Single-ended high-level for CK, CK

Single-ended low-level for strobes NOTE3

Single-ended low-level for CK, CK

; VIH(AC)/VIL(AC) for ADD/CMD is based on V

REFDQ

, DQS, DQS, DQSL, DQSL, DQSU, DQSU need to be within the respective

, the single-ended components of differential signals have a requirement

REF

max, V

min has no bearing on timing, but adds a restriction on the common

SEH

DDR3-1066/1333/1600/1866

Min Max

/2)+0.175

(V

DD

(VDD/2)+0.175

NOTE3

REFCA

; if a reduced ac-high or ac-low level is used for a signal group, then the

NOTE3 V 1, 2

NOTE3 V 1, 2

/2)-0.175

(V

DD

/2)-0.175

(V

DD

Unit NOTE

V1, 2

V1, 2

- 15 -

Rev. 1.1

V

DD

CK, DQS

VDD/2

CK, DQS

V

SS

V

IX

V

IX

V

IX

V

IHdiffmin

0

V

ILdiffmax

delta TRdiff

delta TFdiff

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K4B4G0846B datasheet DDR3 SDRAM

8.4 Differential Input Cross Point Voltage

To guarantee tight setup and hold times as well as output skew parameters with respect to clock and strobe, each cross point voltage of differential input
signals (CK, CK

cross point of true and complement signal to the mid level between of V

[ Table 12 ] Cross point voltage for differential input signals (CK, DQS)

Symbol Parameter

V

IX

V

IX

NOTE :

1. Extended range for V

±250 mV, and the differential slew rate of CK-CK

2. The relation between V

/2) + VIX(Min) - V

(V

DD

- ((VDD/2) + VIX(Max)) ≥ 25mV

V

SEH

and DQS, DQS) must meet the requirements in below table. The differential input cross point voltage VIX is measured from the actual

and VSS.

DD

Figure 4. VIX Definition

Differential Input Cross Point Voltage relative to VDD/2 for CK,CK

Differential Input Cross Point Voltage relative to VDD/2 for DQS,DQS

is only allowed for clock and if single-ended clock input signals CKand CK are monotonic, have a single-ended swing V

IX

Min/Max and V

IX

≥ 25mV

SEL

is larger than 3 V/ ns. Refer to Table 11 on page 15 for V

should satisfy following.

SEL/VSEH

DDR3-800/1066/1333/1600/1866

Min Max

-150 150 mV

-175 175 mV 1

-150 150 mV

SEL

and V

standard values.

SEH

SEL

/ V

Unit NOTE

of at least VDD/2

SEH

8.5 Slew rate definition for Differential Input Signals

See 14.3 “Address/Command Setup, Hold and Derating :” on page 48 for single-ended slew rate definitions for address and command signals.
See 14.4 “Data Setup, Hold and Slew Rate Derating :” on page 54 for single-ended slew rate definitions for data signals.

8.6 Slew rate definitions for Differential Input Signals

Input slew rate for differential signals (CK, CK and DQS, DQS) are defined and measured as shown in Table 13 and Figure 5.

[ Table 13 ] Differential input slew rate definition

Description

Differential input slew rate for rising edge (CK-CK

Differential input slew rate for falling edge (CK-CK

NOTE :
The differential signal (i.e. CK - CK

and DQS - DQS) must be linear between these thresholds.

and DQS-DQS)

and DQS-DQS)

Measured

From To

V

ILdiffmax

V

IHdiffmin

V

V

IHdiffmin

ILdiffmax

Defined by

V

IHdiffmin

Delta TRdiff

V

IHdiffmin

Delta TFdiff

- V

- V

ILdiffmax

ILdiffmax

Figure 5. Differential Input Slew Rate definition for DQS, DQS, and CK, CK

- 16 -

Rev. 1.1

V

OH(AC)

V

OL(AC)

delta TRsedelta TFse

VTT

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K4B4G0846B datasheet DDR3 SDRAM

9. AC & DC Output Measurement Levels

9.1 Single-ended AC & DC Output Levels

[ Table 14 ] Single-ended AC & DC output levels

Symbol Parameter DDR3-800/1066/1333/1600/1866 Units NOTE

(DC) DC output high measurement level (for IV curve linearity) 0.8 x V

V

OH

(DC) DC output mid measurement level (for IV curve linearity) 0.5 x V

V

OM

(DC) DC output low measurement level (for IV curve linearity) 0.2 x V

V

OL

(AC) AC output high measurement level (for output SR) VTT + 0.1 x V

V

OH

(AC) AC output low measurement level (for output SR) VTT - 0.1 x V

V

OL

NOTE : 1. The swing of +/-0.1 x V

load of 25Ω to V

TT=VDDQ

is based on approximately 50% of the static single ended output high or low swing with a driver impedance of 40Ω and an effective test

DDQ

/2.

DDQ

DDQ

DDQ

DDQ

DDQ

9.2 Differential AC & DC Output Levels

[ Table 15 ] Differential AC & DC output levels

Symbol Parameter DDR3-800/1066/1333/1600/1866 Units NOTE

(AC) AC differential output high measurement level (for output SR) +0.2 x V

V

OHdiff

(AC) AC differential output low measurement level (for output SR) -0.2 x V

V

OLdiff

NOTE : 1. The swing of +/-0.2xV

load of 25Ω to V

TT=VDDQ

is based on approximately 50% of the static single ended output high or low swing with a driver impedance of 40Ω and an effective test

DDQ

/2 at each of the differential outputs.

DDQ

DDQ

V

V

V

V1

V1

V1

V1

9.3 Single-ended Output Slew Rate

With the reference load for timing measurements, output slew rate for falling and rising edges is defined and measured between VOL(AC) and VOH(AC)
for single ended signals as shown in Table 16 and Figure 6.

[ Table 16 ] Single-ended output slew rate definition

Description

Single ended output slew rate for rising edge

Single ended output slew rate for falling edge

NOTE : Output slew rate is verified by design and characterization, and may not be subject to production test.

[ Table 17 ] Single-ended output slew rate

Parameter Symbol

DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866

Min Max Min Max Min Max Min Max Min Max

Single ended output slew rate SRQse 2.5 5 2.5 5 2.5 5 2.5 5 2.5

Description : SR : Slew Rate
Q : Query Output (like in DQ, which stands for Data-in, Query-Output)
se : Single-ended Signals
For Ron = RZQ/7 setting

NOTE : 1) In two cased, a maximum slew rate of 6V/ns applies for a single DQ signal within a byte lane.

- Case_1 is defined for a single DQ signal within a byte lane which is switching into a certain direction (either from high to low of low to high) while all remaining DQ

- Case_2 is defined for a single DQ signals in the same byte lane are switching into the opposite direction (i.e. from low to high or high to low respectively). For the

signals in the same byte lane are static (i.e they stay at either high or low).

remaining DQ signal switching into the opposite direction, the regular maximum limit of 5 V/ns applies.

Measured

From To

V

(AC) VOH(AC)

OL

V

(AC) VOL(AC)

OH

Defined by

(AC)-VOL(AC)

V

OH

Delta TRse

(AC)-VOL(AC)

V

OH

Delta TFse

Units

1)

V/ns

5

Figure 6. Single-ended Output Slew Rate Definition

- 17 -

Rev. 1.1

V

OHdiff

(AC)

V

OLdiff

(AC)

delta TRdiffdelta TFdiff

VTT

V

DDQ

DUT

DQ
DQS
DQS

VTT = V

DDQ

/2

25

Ω

CK/CK

Reference
Point

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K4B4G0846B datasheet DDR3 SDRAM

9.4 Differential Output Slew Rate

With the reference load for timing measurements, output slew rate for falling and rising edges is defined and measured between V

(AC) for differential signals as shown in Table 18 and Figure 7.

diff

[ Table 18 ] Differential output slew rate definition

Description

Differential output slew rate for rising edge

Differential output slew rate for falling edge

NOTE : Output slew rate is verified by design and characterization, and may not be subject to production test.

[ Table 19 ] Differential output slew rate

Parameter Symbol

Differential output slew rate SRQdiff 5 10 5 10 5 10 5 10 5 12 V/ns

Description : SR : Slew Rate

Q : Query Output (like in DQ, which stands for Data-in, Query-Output)

diff : Differential Signals
For Ron = RZQ/7 setting

V

V

DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866

Min Max Min Max Min Max Min Max Min Max

Measured

From To

(AC) V

OLdiff

(AC) V

OHdiff

OHdiff

OLdiff

(AC)

(AC)

V

OHdiff

V

OHdiff

Defined by

(AC)-V

OLdiff

Delta TRdiff

(AC)-V

OLdiff

Delta TFdiff

(AC)

(AC)

OLdiff

(AC) and V

Units

OH-

Figure 7. Differential Output Slew Rate Definition

9.5 Reference Load for AC Timing and Output Slew Rate

Figure 8 represents the effective reference load of 25 ohms used in defining the relevant AC timing parameters of the device as well as output slew rate
measurements.

It is not intended as a precise representation of any particular system environment or a depiction of the actual load presented by a production tester. Sys­tem designers should use IBIS or other simulation tools to correlate the timing reference load to a system environment. Manufacturers correlate to their
production test conditions, generally one or more coaxial transmission lines terminated at the tester electronics.

Figure 8. Reference Load for AC Timing and Output Slew Rate

- 18 -

Rev. 1.1

Overshoot Area

Maximum Amplitude

V

DD

Undershoot Area

Maximum Amplitude

V

SS

Volts

(V)

Time (ns)

Overshoot Area

Maximum Amplitude

V

DDQ

Undershoot Area

Maximum Amplitude

V

SSQ

Volts

(V)

Time (ns)

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9.6 Overshoot/Undershoot Specification

9.6.1 Address and Control Overshoot and Undershoot specifications

[ Table 20 ] AC overshoot/undershoot specification for Address and Control pins (A0-A12, BA0-BA2. CS. RAS. CAS. WE. CKE, ODT)

Parameter

Maximum peak amplitude allowed for overshoot area (See Figure 9) 0.4V 0.4V 0.4V 0.4V 0.4V V

Maximum peak amplitude allowed for undershoot area (See Figure 9) 0.4V 0.4V 0.4V 0.4V 0.4V V

Maximum overshoot area above V

Maximum undershoot area below V

(See Figure 9)

DD

(See Figure 9)

SS

DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866

0.67V-ns 0.5V-ns 0.4V-ns 0.33V-ns 0.28V-ns V-ns

0.67V-ns 0.5V-ns 0.4V-ns 0.33V-ns 0.28V-ns V-ns

Specification

Unit

Figure 9. Address and Control Overshoot and Undershoot Definition

9.6.2 Clock, Data, Strobe and Mask Overshoot and Undershoot Specifications

[ Table 21 ] AC overshoot/undershoot specification for Clock, Data, Strobe and Mask (DQ, DQS, DQS, DM, CK, CK)

Parameter

Maximum peak amplitude allowed for overshoot area (See Figure 10) 0.4V 0.4V 0.4V 0.4V 0.4V V

Maximum peak amplitude allowed for undershoot area (See Figure 10) 0.4V 0.4V 0.4V 0.4V 0.4V V

Maximum overshoot area above V

Maximum undershoot area below V

(See Figure 10)

DDQ

(See Figure 10)

SSQ

DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866

0.25V-ns 0.19V-ns 0.15V-ns 0.13V-ns 0.11V-ns V-ns

0.25V-ns 0.19V-ns 0.15V-ns 0.13V-ns 0.11V-ns V-ns

Specification

Unit

Figure 10. Clock, Data, Strobe and Mask Overshoot and Undershoot Definition

- 19 -

Rev. 1.1

RONpu =

V

DDQ-VOUT

l Iout l

under the condition that RONpd is turned off

RONpd =

V

OUT

l Iout l

under the condition that RONpu is turned off

V

DDQ

DQ

V

SSQ

RON

Pu

Ipd

RON

Pd

To

other

circuity

Output Driver

Ipu

Iout

Vout

MMpupd =

RONpu - RONpd

x 100

RONnom

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9.7 34ohm Output Driver DC Electrical Characteristics

A functional representation of the output buffer is shown below. Output driver impedance RON is defined by the value of external reference resistor RZQ
as follows:

RON

= RZQ/7 (Nominal 34.3ohms +/- 10% with nominal RZQ=240ohm)

34

The individual Pull-up and Pull-down resistors (RONpu and RONpd) are defined as follows

Figure 11. Output Driver : Definition of Voltages and Currents

[ Table 22 ] Output Driver DC Electrical Characteristics, assuming RZQ=240ohms ;

entire operating temperature range ; after proper ZQ calibration

RONnom Resistor Vout Min Nom Max Units NOTE

= 0.2 x V

V

OLdc

= 0.5 x V

DDQ

V

OMdc

V

OHdc

V

= 0.2 x V

OLdc

V

OMdc

V

OHdc

= 0.2 x V

V

OLdc

V

OMdc

V

OHdc

V

= 0.2 x V

OLdc

V

OMdc

V

OHdc

V

OMdc

= VDD and that V

DDQ

= 0.8 x V

= 0.5 x V

= 0.8 x V

= 0.5 x V

= 0.8 x V

= 0.5 x V

= 0.8 x V

= 0.5 x V

RON34pd

34Ohms

RON34pu

RON40pd

40Ohms

RON40pu

Mismatch between Pull-up and Pull-down,

MMpupd

NOTE :

1. The tolerance limits are specified after calibration with stable voltage and temperature. For the behavior of the tolerance limits if temperature or voltage changes after calibra­tion, see following section on voltage and temperature sensitivity

2. The tolerance limits are specified under the condition that V

3. Pull-down and pull-up output driver impedance are recommended to be calibrated at 0.5 X V

above, e.g. calibration at 0.2 X V

4. Measurement definition for mismatch between pull-up and pull-down, MMpupd: Measure RONpu and RONpd. both at 0.5 X V

and 0.8 X V

DDQ

DDQ

DDQ

DDQ

DDQ

DDQ

DDQ

DDQ

DDQ

DDQ

DDQ

DDQ

DDQ

DDQ

0.6 1.0 1.1

0.9 1.0 1.1 1,2,3

0.9 1.0 1.4 1,2,3

0.9 1.0 1.4 1,2,3

RZQ/7

0.9 1.0 1.1 1,2,3

0.6 1.0 1.1 1,2,3

0.6 1.0 1.1

0.9 1.0 1.1 1,2,3

0.9 1.0 1.4 1,2,3

0.9 1.0 1.4 1,2,3

RZQ/6

0.9 1.0 1.1 1,2,3

0.6 1.0 1.1 1,2,3

-10 10 % 1,2,4

= V

SSQ

SS

. Other calibration schemes may be used to achieve the linearity spec shown

DDQ

:

DDQ

- 20 -

1,2,3

1,2,3