Samsung Galaxy J3 2017, SM-J330F Specification
2. Specification
Freq.
Downlink
UL:
10562~1083
8
UL:
8
UL:
7
UL:
8
UL:
8
Time Slot
QPSKHQPS
QPSKHQPS
QPSKHQPS
30dBm~0dB
2-1. GSM General Specification
Band[MHz
]
Uplink/
ARFCN
range
Tx/Rx
spacing
Mod. Bit
rate/
Bit Period
Period/
Frame
Period
GSM850
824~849
869~894
128~251
45MHz 45MHz 95MHz 80MHz 190MHz 80MHz 400MHz 45MHz 45MHz
270.833k
bps
3.692us
576.9us
4.615ms
EGSM
900
880~915
925~960
0~124
& 975~10
23
270.833k
bps
3.692us
576.9us
4.615ms
DCS1800 PCS1900
1710~178
5
1805~188
0
512~885 512~810
270.833k
bps
3.692us
576.9us
4.615ms
1850~191
0
1930~199
0
270.833k
bps
3.692us
576.9us
4.615ms
WCDMA
2100
1922~197
7
2112~216
7
9612~988
8
DL:
3.84Mcps 3.84Mcps 3.84Mcps 3.84Mcps 3.84Mcps
FrameLengt
h:
10ms
Slotlength
:
0.667ms
WCDMA
1900
1852~190
7
1932~198
7
9262~953
8
DL:
9662~993
FrameLengt
h:
10ms
Slotlength
:
0.667ms
WCDMA
1700
1710~175
5
2110~215
5
1313~151
3
DL:
1538~173
FrameLengt
h:
10ms
Slotlength
:
0.667ms
WCDMA
900
880~915
925~960
2712~286
3
DL:
2937~308
FrameLengt
h:
10ms
Slotlength
:
0.667ms
WCMDA
850
824~849
869~894
4132~423
3
DL:
4357~445
FrameLengt
h:
10ms
Slotlength
:
0.667ms
Modulatio
n
MS Power
Power
Class
Sensitivit
y
TDMA
Mux
Cell
Radius
0.3GMSK 0.3GMSK
33dBm~5dBm 33dBm~5dB
m
5pcl ~ 19pcl 5pcl ~ 19pcl 0pcl ~ 15pcl 0pcl ~ 15pcl
-102dBm -102dBm -100dBm -100dBm
8 8 8 8 8 8 8 8 8
35Km 35Km 2Km 2Km 2Km 2Km 2Km 2Km 2Km
0.3GMSK 0.3GMSK
30dBm~0dBm 24dBm~
m
K
-50dBm
3(max+24d
Bm)
-
106.7dBm
QPSKHQPS
K
24dBm~
-50dBm
3(max+24d
Bm)
-
106.7dBm
K
24dBm~
-50dBm
3(max+24d
Bm)
-
106.7dBm
QPSKHQPS
K
24dBm~
-50dBm
3(max+24d
Bm)
-
106.7dBm
K
24dBm~
-50dBm
3(max+24d
Bm)
-
106.7dBm
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2. Specification
control level
control level
control level
control level
2-2. GSM Tx Power Class
TX Power
5
6 31±2 dBm 6 31±2 dBm 1 28±3 dBm 1 28±3 dBm
7 29±2 dBm 7 29±2 dBm 2 26±3 dBm 2 26±3 dBm
8 27±2 dBm 8 27±2 dBm 3 24±3 dBm 3 24±3 dBm
9 25±2 dBm 9 25±2 dBm 4 22±3 dBm 4 22±3 dBm
10 23±2 dBm 10 23±2 dBm 5 20±3 dBm 5 20±3 dBm
11 21±2 dBm 11 21±2 dBm 6 18±3 dBm 6 18±3 dBm
12 19±2 dBm 12 19±2 dBm 7 16±3 dBm 7 16±3 dBm
GSM850
33±2 dBm 5 33±2 dBm 0 30±3 dBm 0 30±3 dBm
TX Power
EGSM900
TX Power
DCS1800
TX Power
PCS1900
13 17±2 dBm 13 17±2 dBm 8 14±3 dBm 8 14±3 dBm
14 15±2 dBm 14 15±2 dBm 9 12±4 dBm 9 12±4 dBm
15 13±2 dBm 15 13±2 dBm 10 10±4 dBm 10 10±4 dBm
16 11±3 dBm 16 11±3 dBm 11 8±4 dBm 11 8±4 dBm
17 9±3dBm 17 9±3dBm 12 6±4 dBm 12 6±4 dBm
18 7±3 dBm 18 7±3 dBm 13 4±4 dBm 13 4±4 dBm
19 5±3 dBm 19 5±3 dBm 14 2±5 dBm 14 2±5 dBm
- -
- -
15 0±5 dBm 15 0±5 dBm
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2. Specification
Freq.
Downlink
UL:
0~599
UL:
650~1150
UL:
1805~1880
UL:
2750~3449
UL:
2400~2649
UL:
2750~3449
21799
[SM-J330F/FN]
2-3. LTE General Specification
Band[MHz]
Uplink/
ARFCN
range
Tx/Rx
spacing
Channel
Bandwidth
Modulation
MS Power
(MPR)
LTE Band1 LTE Band2 LTE Band3 LTE Band4 LTE Band5 LTE Band7 LTE Band8
1920~1980
2110~2170
18000~1859
9
DL:
190MHz 90MHz 95MHz 400MHz 45MHz 120MHz 45MHZ
5/10/15/20
MHz
QPSK,16/64
QAM
-35~25.7
dBm
1850~1910
1930~1990
18650~1915
0
DL:
1.4/3/5/10/
15/20MHz
QPSK,16/64
QAM
-35~25.7
dBm
1710~1785
1805~1880
19200~1995
0
DL:
1.4/3/5/10/
15/20MHz
QPSK,16/64
QAM
-35~25.7
dBm
2520~2570
1805~1880
20750~2144
9
DL:
1.4/3/5/10/
15/20MHz
QPSK,16/64
QAM
-35~25.7
dBm
824~849
869~894
20400~2064
9
DL:
1.4/3/5/10M
Hz
QPSK,16/64
QAM
-35~25.7
dBm
2500~2570
1805~1880
20750~2144
9
DL:
5/10/15/20
MHz
QPSK,16/64
QAM
-35~25.7
dBm
880~914.9
925~959.9
UL:
21450-
DL:
3450-3799
1.4/3/5/10M
Hz
QPSK,16/64
QAM
-35~25.7
dBm
Sensitivit
(QPSK)
(BW 10MHz)
Cell Radius >5Km `>5Km `>5Km >5Km >5Km >5Km >5Km
-94 dBm -92 dBm -92 dBm -92 dBm -92 dBm -95dBm -95dBm
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2. Specification
Freq.
Downlink
6150~6450
6150~6450
Band[MHz]
Uplink/
ARFCN range
Tx/Rx spacing 30MHz 41Mhz - -
Channel Bandwidth
Modulation QPSK,16/64QAM QPSK,16/64QAM QPSK,16/64QAM QPSK,16/64QAM
MS Power
(MPR)
Sensitivit
(QPSK)
(BW 10MHz)
LTE Band17
704~716
734~746
UL:
24150~24450
DL:
5/10/15/20 MHz 5/10/15/20 MHz 5/10/15/20 MHz
-35~25.7dBm -35~25.7dBm -35~25.7 dBm -35~25.7 dBm
-94dBm -94dBm -97dBm -97dBm
LTE
Band20
832~862
791~821
UL:
24150~24450
DL:
LTE Band 38 LTE Band 40
2570~2620
UL, DL :
2570~2620
2300~2400
UL, DL : 2300~2400
5/10/15/20MHz
Cell Radius >5Km >5Km >5Km >5Km
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Distribution, transmi ssion, or infringement of any content or data from this document without Samsung’s written authorization is strictly prohib ited.
2. Specification
Freq.
Downlink
UL:
0~599
UL:
650~1150
UL:
1805~1880
UL:
2750~3449
UL:
2400~2649
UL:
2750~3449
21799
[SM-J330G]
2-3. LTE General Specification
Band[MHz]
Uplink/
ARFCN
range
Tx/Rx
spacing
Channel
Bandwidth
Modulation
MS Power
(MPR)
LTE Band1 LTE Band2 LTE Band3 LTE Band4 LTE Band5 LTE Band7 LTE Band8
1920~1980
2110~2170
18000~1859
9
DL:
190MHz 90MHz 95MHz 400MHz 45MHz 120MHz 45MHZ
5/10/15/20
MHz
QPSK,16/64
QAM
-35~25.7
dBm
1850~1910
1930~1990
18650~1915
0
DL:
1.4/3/5/10/
15/20MHz
QPSK,16/64
QAM
-35~25.7
dBm
1710~1785
1805~1880
19200~1995
0
DL:
1.4/3/5/10/
15/20MHz
QPSK,16/64
QAM
-35~25.7
dBm
2520~2570
1805~1880
20750~2144
9
DL:
1.4/3/5/10/
15/20MHz
QPSK,16/64
QAM
-35~25.7
dBm
824~849
869~894
20400~2064
9
DL:
1.4/3/5/10M
Hz
QPSK,16/64
QAM
-35~25.7
dBm
2500~2570
1805~1880
20750~2144
9
DL:
5/10/15/20
MHz
QPSK,16/64
QAM
-35~25.7
dBm
880~914.9
925~959.9
UL:
21450-
DL:
3450-3799
1.4/3/5/10M
Hz
QPSK,16/64
QAM
-35~25.7
dBm
Sensitivit
(QPSK)
(BW 10MHz)
Cell Radius >5Km `>5Km `>5Km >5Km >5Km >5Km >5Km
-94 dBm -92 dBm -92 dBm -92 dBm -92 dBm -95dBm -95dBm
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Confidential and pr oprietary-the c ontents in this ser vice guide subject to change wi thout prior noti ce
2. Specification
Freq.
Downlink
6150~6450
6150~6450
6260~6609
Band[MHz]
Uplink/
ARFCN range
Tx/Rx spacing 30MHz 41Mhz 55Mhz - -
Channel
Bandwidth
Modulation QPSK,16/64QAM QPSK,16/64QAM QPSK,16/64QAM QPSK,16/64QAM QPSK,16/64QAM
MS Power
(MPR)
Sensitivit
(QPSK)
(BW 10MHz)
LTE Band17 LTE Band20 LTE Band28 LTE Band 38 LTE Ba nd 40
704~716
734~746
UL:
24150~24450
DL:
5/10/15/20 MHz 5/10/15/20 MHz 5/10/15/20 MHz 5/10/15/20 MHz
-35~25.7dBm -35~25.7dBm -35~25.7dBm -35~25.7 dBm -35~25.7 dBm
-94dBm -94dBm -94dBm -97dBm -97dBm
832~862
791~821
UL:
24150~24450
DL:
708~743
763~798
UL:
27260~27609
DL:
2570~2620
UL, DL :
2570~2620
2300~2400
UL, DL :
2300~2400
5/10/15/20 MHz
Cell Radius >5Km >5Km >5Km >5Km >5Km
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3. Operation Instruction and Installation
Main Function
Item Description
OS Android V7.0 (Nougat OS)
SM-J330F/FN
RF
SM-J330G
RF
Battery 2,400mAh
Base Band 1.4GHz Quad
SM-J330F/G
Other RF
SM-J330FN
Other RF
Camera 13MP AF (Main). 5M FF(Front)
Sensor Accelerometer, Proxy
Accessory
LCD 5" HD in Cell Touch LCD, 1280 x 720
RAM 2GB LPDDR3 RAM + 16GB eMMC
2G Quad(850/900/1800/1900), WCDMA(1,2,5,8), LTE (1,2,3,4,5,7,8,17,20,38,40)
2G Quad(850/900/1800/1900), WCDMA(1,2,4,5,8), LTE (1,2,3,4,5,7,8,17,20,28,38,40)
GPS, Glonass, Beidou, BT4.2, USB 2.0, WIFI 802.11 b/g/n SISO
GPS, Glonass, Beidou, BT4.2, USB 2.0, WIFI 802.11 b/g/n SISO, NFC
Charger: 5V, 1A
Headset (Option)
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Distribution, transmission, or infringement of any content or data from this document without Samsung’s written authorization is strictly prohibited.
9. Reference Abbreviate
Reference Abbreviate
― AAC: Advanced Audio Coding.
― AVC : Advanced Video Coding.
― BER : Bit Error Rate
― BPSK: Binary Phase Shift Keying
― CA : Conditional Access
― CDM : Code Division Multiplexing
― C/I : Carrier to Interference
― DMB : Digital Multimedia Broadcasting
― EN : European Standard
― ES : Elementary Stream
― ETSI: European Telecommunications Standards Institute
― MPEG: Moving Picture Experts Group
― PN : Pseudo-random Noise
― PS : Pilot Symbol
― QPSK: Quadrature Phase Shift Keying
― RS : Reed-Solomon
― SI : Service Information
― TDM : Time Division Multiplexing
― TS : Transport Stream
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Distribution, transmission, or infringement of any content or data from this document without Samsung’s written authorization is strictly prohibited.
1. Safety Precautions
1-1. Repair Precaution
Before attempting any repair or detailed tuning, shield the device from RF noise or static
electricity discharges.
Use only demagnetized tools that are specifically designed for small electronic repairs,
as most electronic parts are sensitive to electromagnetic forces.
Use only high quality screwdrivers when servicing products. Low quality screwdrivers can
easily damage the heads of screws.
Use only conductor wire of the properly gauge and insulation for low resistance, because of the low margin
of error of most testing equipment.
We recommend 22-gauge twisted copper wire.
Hand-soldering is not recommended, because printed circuit boards (PCBs) can be easily
damaged, even with relatively low heat. Never use a soldering iron with a power rating of
more than 100 watts and use only lead-free solder with a melting point below 250°C (482°F).
Prior to disassembling the battery charger for repair, ensure that the AC power is disconnected.
Always use the replacement parts that are registered in the SEC system. Third-party replacement parts
may not function properly.
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Distribution, transmission, or infringement of any content or data from this document without Samsung’s written authorization is strictly prohibited.
1. Safety Precautions
1-2. ESD(Electrostatically Sensitive Devices) Precaution
Many semiconductors and ESDs in electronic devices are particularly sensitive to static discharge and can
be easily damaged by it. We recommend protecting these components with conductive anti-static bags
when you store or transport them.
Always use an anti-static strap or wristband and remove electrostatic buildup or dissipate
static electricity from your body before repairing ESDs.
Ensure that soldering irons have AC adapter with ground wires and that the ground wires are properly
connected.
Use only desoldering tools with plastic tips to prevent static discharge.
Properly shield the work environment from accidental electrostatic discharge before opening
packages containing ESDs.
The potential for static electricity discharge may be increased in low humidity environments,
such as air-conditioned rooms. Increase the airflow to the working area to decrease the
chance of accidental static electricity discharges.
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Distribution, transmission, or infringement of any content or data from this document without Samsung’s written authorization is strictly prohibited.
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