Samsung GSM 850, EGSM 900, DCS1800, PCS1900 Product Specification

1. Safety Precautions
1-1. Repair Precaution
Before attempting any repair or detailed tuning, shield the device from RF noise or static
Do not touch metallic parts or circuits with your bare hands as device(parts, circuits, etc) may be
corroded.
Use only demagnetized tools that are specifically designed for small electronic repairs,
as most electronic parts are sensitive to electromagnetic forces.
Use only high quality screwdrivers when servicing products. Low quality screwdrivers can
easily damage the heads of screws.
Use only conductor wire of the properly gauge and insulation for low resistance, because of the low
margin of error of most testing equipment. We recommend 22-gauge twisted copper wire.
Hand-soldering is not recommended, because printed circuit boards (PCBs) can be easily
damaged, even with relatively low heat. Never use a soldering iron with a power rating of more than 100 watts and use only lead-free solder with a melting point below 250°C (482°F).
Prior to disassembling the battery charger for repair, ensure that the AC power is disconnected.
Always use the replacement parts that are registered in the SEC system. Third-party replacement parts may not function properly.
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Distribution, transmission, or infringement of any content or data from this document without Samsung’s written authorization is strictly prohibited.
1. Safety Precautions
1-2. ESD(Electrostatically Sensitive Devices) Precaution
Many semiconductors and ESDs in electronic devices are particularly sensitive to static discharge and can be easily damaged by it. We recommend protecting these components with conductive anti-static bags when you store or transport them.
Always use an anti-static strap or wristband and remove electrostatic buildup or dissipate
static electricity from your body before repairing ESDs.
Ensure that soldering irons have AC adapter with ground wires and that the ground wires are properly
connected.
Use only desoldering tools with plastic tips to prevent static discharge.
Properly shield the work environment from accidental electrostatic discharge before opening
packages containing ESDs.
The potential for static electricity discharge may be increased in low humidity environments,
such as air-conditioned rooms. Increase the airflow to the working area to decrease the chance of accidental static electricity discharges.
Confidential and proprietary-the contents in this service guide subject to change without prior notice
Distribution, transmission, or infringement of any content or data from this document without Samsung’s written authorization is strictly prohibited.
Confidential and proprietary-the contents in this service guide subject to change without prior notice
Distribution, transmission, or infringement of any content or data from this document without Samsung’s written authorization is strictly prohibited.
2. Specification
2-1. GSM General Specification
Item
GSM 850
EGSM 900
DCS1800
PCS1900
Freq. Band[MHz]
Uplink/Downlink
824~849 869~894
880~915 925~960
1710~1785 1805~1880
1850~1910 1930~1990
ARFCN range
128~251
0~124 & 975~1023
512~885
512~810
Tx/Rx spacing
45MHz
45MHz
95MHz
80MHz
Mod. Bit rate/
Bit Period
270.833kbps
3.692us
270.833kbps
3.692us
270.833kbps
3.692us
270.833kbps
3.692us
Time Slot Period/
Frame Period
576.9us
4.615ms
576.9us
4.615ms
576.9us
4.615ms
576.9us
4.615ms
Modulation
GSM / EGPRS
GMSK/
8PSK
GMSK/
8PSK
GMSK/
8PSK
GMSK/
8PSK
MS Power
(dBm)
33dBm~5dBm
33dBm~5dBm
30dBm~0dBm
30dBm~0dBm
Power Class
4(GMSK)
E2(8PSK)
4(GMSK)
E2(8PSK)
1(GMSK)
E2(8PSK)
1(GMSK)
E2(8PSK)
Sensitivity (QPSK, BW
10MHz) (dBm)
-102dBm
-102dBm
-100dBm
-100dBm
TDMA Mux
8 8 8
8
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2. Specification
2-2. GSM Tx Power Class
TX Power
control level
GSM850
TX Power
control level
EGSM900
TX Power
control level
DCS1800
TX Power
control level
PCS1900
5
33±2 dBm
5
33±2 dBm
0
30±3 dBm
0
30±3 dBm
6
31±2 dBm
6
31±2 dBm
1
28±3 dBm
1
28±3 dBm
7
29±2 dBm
7
29±2 dBm
2
26±3 dBm
2
26±3 dBm
8
27±2 dBm
8
27±2 dBm
3
24±3 dBm
3
24±3 dBm
9
25±2 dBm
9
25±2 dBm
4
22±3 dBm
4
22±3 dBm
10
23±2 dBm
10
23±2 dBm
5
20±3 dBm
5
20±3 dBm
11
21±2 dBm
11
21±2 dBm
6
18±3 dBm
6
18±3 dBm
12
19±2 dBm
12
19±2 dBm
7
16±3 dBm
7
16±3 dBm
13
17±2 dBm
13
17±2 dBm
8
14±3 dBm
8
14±3 dBm
14
15±2 dBm
14
15±2 dBm
9
12±4 dBm
9
12±4 dBm
15
13±2 dBm
15
13±2 dBm
10
10±4 dBm
10
10±4 dBm
16
11±3 dBm
16
11±3 dBm
11
8±4 dBm
11
8±4 dBm
17
9±3 dBm
17
9±3 dBm
12
6±4 dBm
12
6±4 dBm
18
7±3 dBm
18
7±3 dBm
13
4±4 dBm
13
4±4 dBm
19
5±3 dBm
19
5±3 dBm
14
2±5 dBm
14
2±5 dBm
- - - - 15
0±5 dBm
15
0±5 dBm
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2. Specification
2-3. WCDMA General Specification
Item
WCDMA2100(B1)
WCDMA1900(B2)
WCDMA AWS(B4)
WCDMA850(B5)
WCDMA900(B8)
Freq. Band[MHz]
Uplink/Downlink
1920~1980 2110~2170
1850~1910 1930~1990
1710~1755 2110~2155
824~849 869~894
880~915 925~960
ARFCN range
UL:9612~9888
DL:10562~10838
UL:9262~9538 DL:9662~9938
UL:1312~1513 DL:1537~1738
UL:4132~4233 DL:4357~4458
UL:2712~2868 DL2937~3088
Tx/Rx spacing
190MHz
80MHz
400MHz
45MHz
45MHz
Mod. Bit rate/
Bit Period
42.2Mbps(DL)
5.42Mbps(UL)
42.2Mbps(DL)
5.42Mbps(UL)
42.2Mbps(DL)
5.42Mbps(UL)
42.2Mbps(DL)
5.42Mbps(UL)
42.2Mbps(DL)
5.42Mbps(UL)
Time Slot Period/
Frame Period
WCDMA
10ms/0.667ms
HSPA
2ms/0.667ms
WCDMA
10ms/0.667ms
HSPA
2ms/0.667ms
WCDMA
10ms/0.667ms
HSPA
2ms/0.667ms
WCDMA
10ms/0.667ms
HSPA
2ms/0.667ms
WCDMA
10ms/0.667ms
HSPA
2ms/0.667ms
Modulation
QPSK 16QAM 64QAM
QPSK 16QAM 64QAM
QPSK 16QAM 64QAM
QPSK 16QAM 64QAM
QPSK 16QAM 64QAM
MS Power
(dBm)
25.7 ~ -49()
25.7 ~ -49()
25.7 ~ -49()
25.7 ~ -49()
25.7 ~ -49() Power Class
3(max+24dBm)
3(max+24dBm)
3(max+24dBm)
3(max+24dBm)
3(max+24dBm)
Sensitivity (QPSK,
BW 10MHz) (dBm)
-106dBm
-104dBm
-106dBm
-104dBm
-103dBm
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2. Specification
2-4. LTE General Specification
Item
LTE Ban d 1
LTE Ban d 2
LTE Ban d 3
LTE Ban d 4
LTE Ban d 5
Freq. Band[MHz]
Uplink/Downlink
1920~1980 2110~2170
1850~1910 1930~1990
1710~1785 1805~1880
1710~1755 2110~2155
824~849 869~894
ARFCN range
UL:18000~18599
DL:0~599
UL:18600~19199
DL:600~1199
UL:19200~19949
DL:1200~1949
UL:19950~20399
DL:1950~2399
UL:20400~20649
DL:2400~2649
Tx/Rx spacing
(MHz)
190
80
95
400
45
Channel Bandwidth
(MHz)
5/10/15/20
1.4/3/5/10/15/20
1.4/3/5/10/15/20
1.4/3/5/10/15/20
1.4/3/5/10
Modulation
QPSK,16/64QAM
256QAM(DL only)
QPSK,16/64QAM
256QAM(DL only)
QPSK,16/64QAM
256QAM(DL only)
QPSK,16/64QAM
256QAM(DL only)
QPSK,16/64QAM
256QAM(DL only)
MS Power
(dBm)
25.7~-39(↓)
25.7~-39(↓)
25.7~-39(↓)
25.7~-39(↓)
25.7~-39(↓)
Sensitivity (QPSK,
BW 10MHz) (dBm)
-96.3
-94.3
-93.3
-96.3
-94.3
Item
LTE Ban d 7
LTE Ban d 8
LTE Ban d 1 2
LTE Ban d 1 3
[On l y f or A525M ]
LTE Ban d 1 7
Freq. Band[MHz]
Uplink/Downlink
2500~2570 2620~2690
88 0 ~915 92 5 ~960
69 9 ~716 72 9 ~746
777~787 746~756
70 4 ~716 73 4 ~746
ARFCN range
UL:20750~21449
DL:2750~3449
UL:21450-21799
DL:3450-3799
UL:23010~23179
DL:5010~5179
UL:23180~23279
DL:5180~5279
UL:23730~23849
DL:5730~5849
Tx/Rx spacing
(MHz)
120
45
30
-31
30
Channel Bandwidth
(MHz)
5/10/15/20
1. 4 /3/5 / 10
1. 4 /3/5 / 10
1. 4 /3/5 / 10
5/ 1 0
Modulation
QPSK,16/64QAM
256QAM(DL only)
QPSK,16/64QAM
256QAM(DL only)
QPSK,16/64QAM
256QAM(DL only)
QPSK,16/64QAM
256QAM(DL only)
QPSK,16/64QAM
256QAM(DL only)
MS Power
(dBm)
25.7~-39(↓)
25 . 7~-39(↓)
25 . 7 ~-39(↓)
25 . 7~-39(↓)
25 . 7~-39(↓)
Sensitivity (QPSK,
BW 10MHz) (dBm)
-94.3
-9 3 .3
-9 3 .3
-9 3 .3
-9 3 .3
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Distribution, transmission, or infringement of any content or data from this document without Samsung’s written authorization is strictly prohibited.
2. Specification
Item
LTE Ban d 2 0
LTE Ban d 26
LTE Ban d 28
LTE Ban d 32
[On l y f or A525F]
Freq. Band[MHz]
Uplink/Downlink
832~8 62 791~8 21
859~8 94 814~8 49
703~7 48 758~8 03
N/ A
14 5 2~149 6
ARFCN range
UL:24150~24449
DL:6150~6449
UL:26690~27039
DL:8690~9039
UL:27210~27659
DL:9210~9659
N/A
DL:9920~10359
Tx/Rx spacing
(MHz)
-41
-45
55
DL On ly
Channel Bandwidth
(MHz)
5/ 1 0/15 / 20
1. 4 /3/5 / 10/15
3/5/10/1 5/20
5/ 1 0/15/ 2 0
Modulation
QPSK,16/64QAM
256QAM(DL only)
QPSK,16/64QAM
256QAM(DL only)
QPSK,16/64QAM
256QAM(DL only)
QPSK,16/64QAM
256QAM(DL only)
MS Power (dBm)
25 . 7~-39(↓)
25 . 7~-39(↓)
25 . 7~-39(↓)
25 . 7~-39(↓)
Sensitivity (QPSK, BW
10MHz) (dBm)
-9 3 .3
-9 3 .8
-94. 8
-9 6 .5
Item
LTE Ban d 66
LTE Ban d 3 8
LTE Ban d 4 0
LTE Ban d 4 1
Freq. Band[MHz]
Uplink/Downlink
1710~1780 211 0 ~220 0
25 7 0~262 0
23 0 0~240 0
24 9 6~269 0
ARFCN range
UL:131972~132671
DL:66436~67335
UL/DL:37750 ~ 38249
UL/DL:38650 ~ 39649
UL/DL:39650 ~ 41589
Tx/Rx spacing
(MHz)
400 0 0
0
Channel Bandwidth
(MHz)
1.4/ 3/5/10/15/ 20
5/10 /15/20
5/10 /15/20
5/10 /15/20
Modulation
QPSK,16/64QAM
256QAM(DL only)
QPSK,16/64QAM
256QAM(DL only)
QPSK,16/64QAM
256QAM(DL only)
QPSK,16/64QAM
256QAM(DL only)
MS Power (dBm)
25 . 7~-39(↓)
25 . 7~-39(↓)
25 . 7~-39(↓)
PC 2:28.7~- 39(↓) PC 3:25.7 ~ -39(↓)
Sensitivity (QPSK, BW
10MHz) (dBm)
-95. 8
-96. 3
-96. 3
-94. 3
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