SAIFUN SA25F005EM8, SA25F005EM8F, SA25F005EM8FX, SA25F005EM8X, SA25F005EMLF Datasheet

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Features

Saifun NROM™ Flash Cell

Serial Peripheral Interface (SPI) Compatible, Supports SPI Modes 0 (0,0) and 3 (1,1)

Page Program Operation:

256 pages (256 Bytes/Page)

Single Page Rewrite Cycle (Erase and Program) in 10ms Typical

Page Program Mode (up to 256 bytes) in 9ms Typical

Page Erase (256 bytes) in 3 ms

Sector Erase (256 Kb) in 0.3 s

Bulk Erase (512 Kb)

Single Supply Voltage: 2.7 V to 3.6 V

25MHz Clock Rate

Block Write Protection: Protect Quarter, Half or Entire Array

Write Protect Pin and Write Disable Instructions of Both Hardware and Software Data Protection

100,000 Erase Cycles (Minimum)

More than 20-Year Data Retention

Low-power Standby Current (less than 1 A)

8-SOIC Narrow Package

MLF Leadless Package

Temperature Range:

Industrial: -40°C to +85°C

Commercial: 0°C to +70°C

http://www.saifun.com

Saifun NROMTM is a trademark of Saifun Semiconductors Ltd.

SA25F005

Advanced

Information

512Kb Serial Flash with 25MHz SPI Bus Interface

This Data Sheet states Saifun's current technical specifications regarding the Products described herein. This Data

Publication# 1984 Rev: 1 Amendment: 0

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Issue Date: 24 July 2003

 

 

 

 

 

 

 

 

 

 

 

SA25F005 Advanced Information

 

2

 

 

 

 

 

 

 

 

 

 

 

 

SAIFUN

 

General Description

 

 

The HOLDb pin may be used to suspend

 

 

any serial communication without resetting

 

 

 

 

 

 

 

the serial sequence. In addition, the serial

The SA25F005 is a 512Kb (256K X 2)

interface allows a minimal-pin-count

CMOS non-volatile serial Flash Memory.

packaging designed to simplify PC board

This device fully conforms to the SPI 4-wire

layout requirements and offers the designer

protocol, is enabled through the Chip Select

a variety of low-voltage and low-power

(CSb) pin, and uses Clock (SCK), Data-in

options.

 

 

 

 

 

 

 

(SI)

and

Data-out

(SO)

pins

to

The SA25F005

is available

in

a

synchronously

control

data

transfer

space-saving, 8-lead narrow SOIC package

between the SPI microcontroller and the

Serial FLASH memory.

 

 

 

The SA25F005 is part of the SPI Flash and

 

 

 

 

 

 

 

The memory can be programmed from 1 up

EEPROM family. It is designed to work with

any

SPI-compatible,

high-speed

to

256 bytes

at a time via

the

Page

microcontroller, and

offers

both hardware

Program (PP) instruction.

 

 

 

 

 

 

(WPb pin) and Software (“block protect”)

 

 

 

 

 

 

 

The memory is organized into two sectors.

data protection. For example, programming

Each sector contains 128 pages, with each

a 2-bit code into the status register prevents

page being 256 bytes wide. The entire

program with top ¼, top ½ or entire array

memory can therefore be viewed as

write protection and enables block write

consisting of 256 pages, or 65,536 bytes.

protection. Separate program enable and

The memory can be erased in one of the

program disable instructions are provided

for additional data protection. Hardware

following ways:

 

 

 

 

data protection is provided via the WPb pin

256 bytes at a time, using the Page

to protect against inadvertent write attempts

 

Erase (PE) instruction

 

 

 

to the status register.

 

 

 

 

256 Kb at a time, using the Sector

Saifun’s SPI Serial Flash products are

 

Erase (SE) instruction

 

 

 

designed and tested for applications

512 Kb

at

a time, using the Bulk

requiring

high

endurance

and low

power

consumption

for a

continuously

reliable

 

Erase (BE) instruction

 

 

 

 

 

 

 

non-volatile solution for all markets.

 

 

 

 

 

 

 

 

 

 

 

 

 

Each device requires only a 3.0V power supply (2.7 V to 3.6 V) for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The SA25F005 does not require a VPP supply.

SA25F005 Advanced Information

SAIFUN 3

Table of Contents

 

Features .........................................................................

1

General Description ......................................................

2

Memory Organization....................................................

5

Connection Diagrams ...................................................

6

Ordering Information ....................................................

7

Product Specifications .................................................

8

Absolute Maximum Ratings.....................................

8

ESD/Latch Up Specification (JEDEC 8 Spec) .........

8

Operating Conditions...............................................

8

DC Characteristics ........................................................

9

AC Test Conditions .....................................................

10

Timing Diagrams .........................................................

11

Signal Description.......................................................

13

Functional Description ...............................................

17

Instructions............................................................

17

Read Status Register (RDSR) ...............................

18

Write Enable (WREN) ...........................................

20

Write Disable (WRDI)............................................

20

Write Status Register (WRSR) ..............................

21

Read Data Bytes (READ) ......................................

23

Fast Read (FAST_READ) .....................................

24

Page Programming (PP) .......................................

25

Page Erase (PE)...................................................

27

Sector Erase (SE) .................................................

28

Bulk Erase (BE).....................................................

29

Software Protection (SP)/ Deep Powerdown (DP) . 30

Release from Software Protect (RES) ...................

31

Release from Software Protection and Read

 

Electronic Signature (RES)....................................

32

Powerup and Powerdown......................................

33

Physical Dimensions...................................................

34

Chip Select (CSb)..................................................

13

Contact Information ....................................................

37

Serial Clock (SCK) ................................................

13

Life Support Policy......................................................

37

Serial Input (SI) .....................................................

13

 

 

Serial Output (SO).................................................

13

 

 

Hold (HOLDb)........................................................

13

 

 

Write Protect (WPb) ..............................................

13

 

 

Serial Interface Description ........................................

14

 

 

SPI Modes ............................................................

14

 

 

Master ...........................................................

14

 

 

Slave .............................................................

14

 

 

Transmitter/Receiver .....................................

14

 

 

Serial Opcode................................................

14

 

 

Invalid Opcode ..............................................

14

 

 

Chip Select (CSb)..........................................

14

 

 

Hold Condition...............................................

15

 

 

Write Protect .................................................

16

 

 

 

 

SA25F005 Advanced Information

4

 

 

SAIFUN

List of Figures

 

..........Figure 19. Bulk Erase (BE) Instruction Sequence

29

 

Figure 1. SA25F005 Block Diagram

5

Figure 20. Software Protection Instruction Sequence....

30

 

 

 

 

Figure 2. SOIC 8 (150 mil)/PDIP/MLF Package

 

Figure 21. Release from Software Protect (RES) Instruction

 

 

Sequence

31

 

(Top View)

6

 

 

 

 

Figure 3. SA25F005 Ordering Information

7

Figure 22. Release from Software Protection and Read

 

 

Electronic Signature (RES) Instruction Sequence 32

 

 

 

 

Figure 4. SPI Mode 0 (0,0) Input Timing........................

11

Figure 23. 8-pin SOIC Package

34

 

 

 

 

Figure 5. SPI Mode 0 (0,0) Output Timing.....................

11

Figure 24. 8-pin MLF Leadless Package

35

 

 

 

 

Figure 6. AC Measurements I/O Waveform...................

12

Figure 25. Molded Dual-in-line Package (N) Package

 

 

Figure 7. Supported SPI Modes

14

Number N08E......................................................

36

 

 

 

 

Figure 8. Hold Condition................................................

15

List of Tables

 

 

Figure 9. SPI Serial Interface ........................................

17

Table 1. Memory Organization ........................................

5

 

Figure 10. Read Status Register (RDSR) Instruction

 

Table 2. Pin Names.........................................................

6

 

Sequence ............................................................

19

Table 3. DC Characteristics

9

 

Figure 11. Write Enable (WREN) Instruction Sequence 20

 

Table 4. AC Test Conditions

10

 

Figure 12. Write Disable (WRDI) Instruction Sequence. 20

 

Table 5. AC Measurements

12

 

Figure 13. Write Status Register (WRSR) Instruction

 

 

 

Table 6. Instruction Set

17

 

Sequence ............................................................

22

 

Figure 14. Read (READ) Instruction Sequence .............

23

Table 7. Status Register Format....................................

18

 

Figure 15. Fast Read (FAST_READ) Instruction

 

Table 8. Read Status Register Definition.......................

18

 

Sequence ............................................................

24

Table 9. Block Write Protect Bits

21

 

Figure 16. Page Programming (PP) Instruction

 

 

 

Table 10. WPBEN Operation

21

 

Sequence ............................................................

26

 

Figure 17. Page Erase (PE) Instruction Sequence ........

27

Table 11. Powerup ........................................................

33

 

Figure 18. Sector Erase (SE) Instruction Sequence ......

28

 

 

 

 

SA25F005 Advanced Information

5

 

SAIFUN

Memory Organization

Each page can be individually

 

programmed, with the bits programmed

 

The memory is organized in the following

from 1 to 0. The SA25F005's memory

 

can be erased via the Page, Sector or

 

manner:

 

Bulk Erase commands, with the bits

 

65,596 bytes (8 bits each)

 

erased from 0 to 1.

 

2 sectors (256 Kb total, 32,768 bytes each), as shown in Table 1

256 pages (256 bytes each)

Table 1. Memory Organization

Sector

Address Range

 

 

 

1

8000h

0FFFFh

 

 

 

0

00000h

07FFFh

 

 

 

SRAM

 

PS

 

 

 

 

 

 

 

 

X

 

Array - L

D

Array - R

E

 

 

Logic

C

 

 

 

RD

 

DATA PATH

 

 

 

 

 

 

IO

 

 

 

CSb

SCK

SI

SO

GND

Vcc

WPb

HOLDb

Figure 1. SA25F005 Block Diagram

SA25F005 Advanced Information

SAIFUN 6

Connection Diagrams

CSb

 

1

8

 

VCC

 

 

 

 

 

7

 

HOLDb

SO

 

2

 

 

 

 

SA25F005

 

SCK

WPb

 

3

6

 

 

 

 

5

 

SI

GND

 

4

 

 

 

 

 

 

 

Figure 2. SOIC 8 (150 mil)/PDIP/MLF Package (Top View)

 

Table 2. Pin Names

 

 

 

Pin Name

 

Signal Name

 

 

 

CSb

 

Chip Select

SCK

 

Serial Data Clock

SI

 

Serial Data Input

SO

 

Serial Data Output

GND

 

Ground

 

 

 

VCC

 

Power Supply

WPb

 

Write Protect

 

 

 

HOLDb

 

Suspend Serial Input

 

 

 

SA25F005 Advanced Information

SAIFUN 7

Ordering Information

SA

25

F

XX

L

E

PP

F

X

Letter

Description

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Blank

Tube

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

X

Tape and Reel

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Blank

Non-lead Free

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

F

Lead Free

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Package

N

8-pin DIP

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

M8

8-pin SOIC (150 mil)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MLF

8-lead MLF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Temp. Range

Blank

0 to 70oC

 

 

 

 

 

 

 

 

 

 

 

 

Voltage Operating Range

 

E

-40 to +85oC

 

 

 

 

 

 

 

 

 

 

 

 

 

L

2.7 V to 3.6 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Density

005

512 Kb with Write

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Protect

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

F

Flash

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Interface

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

25

SPI-2 Wires

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SA

Saifun Non-Volatile

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Memory

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Figure 3. SA25F005 Ordering Information

SA25F005 Advanced Information

SAIFUN 8

Product Specifications

Absolute Maximum Ratings

Storage Temperature

All input or output voltages with respect to Ground

Lead Temperature (Soldering, 10 seconds)

ESD Rating

-65 ° C to +150 ° C 4.5 V to -0.3 V

+235 ° C

2000 V min.

ESD/Latch Up Specification (JEDEC 8 Spec)

Human Body Model

Minimum 4 KV

Machine Model

Minimum 500 V

Charge Device Model

Minimum 1 KV

Latch Up

100 mA on all pins +125° C

Operating Conditions

Operating Temperature:

0 ° C to +70 ° C

SA25F005

SA25F005E

-40 ° C to +85 ° C

Positive Power Supply:

 

SA25F005

2.7 V to 3.6 V

SA25F005 Advanced Information

SAIFUN 9

DC Characteristics

Applicable over recommended operating range from TAI = -40 ºC to 85 ºC, VCC = 2.7-3.6 V.

Table 3. DC Characteristics

Symbol

Parameter

Test Conditions

 

Limits

 

Unit

 

 

Min

Typ*

Max

 

 

 

 

 

 

 

 

 

 

 

VCC

Supply Voltage

 

2.7

3

3.6

V

 

 

 

 

 

 

 

ICC1

Active Power Supply

SCK = 0.1VCC/0.9 VCC @

 

9

12

mA

Current (Read)

25 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC2

Active Power Supply

CSb = VCC

 

 

15

mA

Current (Page Program)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC3

Active Power Supply

CSb = VCC

 

 

15

mA

Current (WRSR)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC4

Active Power Supply

CSb = VCC

 

 

15

mA

Current (SE)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC5

Active Power Supply

CSb = VCC

 

 

15

mA

Current (BE)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB

Standby Current

VCC = 3.0 V,

 

 

1

A

CSb = VCC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IIL

Input Leakage Current

VIN = GND to VCC

 

 

1

A

 

 

 

 

 

 

 

IOL

Output Leakage Current

VIN = GND to VCC

 

 

1

A

 

 

 

 

 

 

 

VIL

Input Low Voltage

 

-0.3

 

0.3 VCC

V

 

 

 

 

 

 

 

VIH

Input High Voltage

 

0.7 VCC

 

VCC +

V

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

VOH

Output High Voltage

IOH = -0.1 mA

VCC -

 

 

V

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOL

Output Low Voltage

IOL = 1.6 mA; VCC = 2.7 V

 

 

0.4

V

 

 

 

 

 

 

 

*Typical values are at TAI = 25 ºC and 3 V.

SA25F005 Advanced Information

10

SAIFUN

AC Test Conditions

Table 4. AC Test Conditions

Symbol

Parameter

 

25 MHz

 

Unit

Min

Typ

Max

 

 

 

 

 

 

 

 

 

FSCK

SCK Clock Frequency

D.C.

 

25

MHz

 

 

 

 

 

 

tCRT

Clock Rise Time (Slew Rate)

0.1

 

 

V/ns

 

 

 

 

 

 

tCFT

Clock Fall Time (Slew Rate)

0.1

 

 

V/ns

 

 

 

 

 

 

tWH

SCK High Time

18

 

 

ns

 

 

 

 

 

 

tWL

SCK Low Time

18

 

 

ns

 

 

 

 

 

 

tCS

CSb High Time

100

 

 

ns

 

 

 

 

 

 

**

CSb Setup Time

10

 

 

ns

tCSS

 

 

**

CSb HOLD Time

10

 

 

ns

tCSH

 

 

**

HOLDb Setup Time

10

 

 

ns

tHD

 

 

**

HOLDb Hold Time

10

 

 

ns

tCD

 

 

tV

Output Valid

0

 

15

ns

 

 

 

 

 

 

tHO

Output Hold Time

0

 

 

ns

 

 

 

 

 

 

tHD:DAT

Data in Hold Time

5

 

 

ns

 

 

 

 

 

 

tSU:DAT

Data in Setup Time

5

 

 

ns

tLZ **

HOLDb to Output Low Z

 

 

15

ns

tHZ **

HOLDb to Output High Z

 

 

20

ns

**

Output Disable Time

 

 

15

ns

tDIS

 

 

**

Write Protect Setup Time

20

 

 

ns

tWPS

 

 

**

Write Protect Hold Time

100

 

 

ns

tWPH

 

 

tPP*

256-byte Page Programming

 

8

10

ms

 

 

 

 

 

 

tEP*

Page Erase and

 

10

15

ms

Programming

 

 

 

 

 

 

tPE

Page Erase Time

 

3

6

ms

 

 

 

 

 

 

tSE

Sector Erase Time

 

0.3

0.4

sec

tBE

Bulk Erase Time

 

0.5

0.8

sec

tRES

Release SP Mode

 

 

1000

ns

Endurance

 

100K

 

 

Erase cycles

 

 

 

 

 

 

*256 bytes in the checkerboard programming formation.

**Value guaranteed by characterization, not 100% tested in production

SAIFUN SA25F005EM8, SA25F005EM8F, SA25F005EM8FX, SA25F005EM8X, SA25F005EMLF Datasheet

SA25F005 Advanced Information

SAIFUN 11

Timing Diagrams

All timing diagrams are based on SPI protocol modes 0 and 1.

tCS

CS

 

 

 

 

 

 

tCSH

t

CSS

 

t

CSH

t

 

 

 

 

CSS

SCK

 

 

 

 

 

 

 

tSU:DAT tHD:DAT

tCRT

tCFT

 

 

 

 

 

 

 

 

SI

MSB IN

 

 

LSB IN

 

High Impedance

SO

Figure 4. SPI Mode 0 (0,0) Input Timing

CS

 

 

 

 

 

tWH

 

SCK

 

 

 

tV

tV

tWL

tDIS

tHO

tHO

 

 

SO

 

 

LSB OUT

Figure 5. SPI Mode 0 (0,0) Output Timing

SA25F005 Advanced Information

SAIFUN 12

Input Levels

 

Input and Output

Timing Reference Levels

 

 

0.8Vcc

 

 

 

0.7Vcc

 

 

 

 

0.2Vcc

 

 

 

0.3Vcc

 

 

 

 

 

Figure 6. AC Measurements I/O Waveform

 

 

Table 5. AC Measurements

 

Symbol

Parameter

Min

Max

Unit

CL

Load Capacitance

 

30

pF

 

Input Rise and Fall Times

 

5

ns

 

Input Pulse Voltage

0.2 VCC to 0.8 VCC

V

 

Input and Output Timing

0.3 VCC to 0.7 VCC

V

 

Reference Voltages

 

 

 

 

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