ROHM TT8M1 Technical data

www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.

1.5V Drive Nch + Pch MOSFET



TT8M1

 Structure  Dimensions (Unit : mm)
Silicon N-channel MOSFET/
Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) High power package (TSST8).

3) Low voltage drive (1.5V drive).

 Application

Switching

TSST8

(8) (7) (6) (5)

(1) (2) (3) (4)

Abbreviated symbol :M01

 Packaging specifications

Package Taping

Type

Code TR
Basic ordering unit (pieces) 3000

TT8M1 

 Absolute maximum ratings (Ta = 25C)

Parameter Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation

Symbol

DSS

GSS

D

DP

s

sp

P

D

Tr1 : N-ch Tr2 : P-ch

*1

*1

*2

Channel temperature Tch C
Range of storage temperature Tstg C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

Limits

20 20 V

10 10 V

2.5 2.5 A

10 10 A

0.8

0.8 A

10 10 A

1.25

1

W / TOTAL

W / ELEMENT

150

55 to +150

 Inner circuit

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

1/8

2010.08 - Rev.A

Data Sheet

www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.

TT8M1

 Electrical characteristics (Ta = 25C)

<Tr1(Nch)>

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=10V, VDS=0V

20 - - V ID=1mA, VGS=0V

--1AVDS=20V, VGS=0V

0.3 - 1.0 V VDS=10V, ID=1mA

-5272 I

Static drain-source on-state
resistance

R

DS (on)

-6590 I

*

85 120 ID=1.2A, VGS=1.8V

m

100 140 ID=0.5A, VGS=1.5V

iss

oss

rss

d(on)

d(off)

gd

*

- 260 - pF VDS=10V

- 65 - pF VGS=0V

- 35 - pF f=1MHz

-9-nsI

*

*

- 17 - ns VGS=4.5V

*

*

r

- 28 - ns R

*

*

- 17 - ns RG=10

*

*

f

- 3.6 - nC ID=2.5A, VDD 10V

*

*

g

- 0.7 - nC VGS=4.5V,RL 4

*

*

gs

- 0.6 - nC RG=10

*

*

Forward transfer admittance l Yfs l 2.7 - - S VDS=10V, ID=2.5A

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

ConditionsParameter

=2.5A, VGS=4.5V

D

=2.5A, VGS=2.5V

D

=1.2A, VDD 10V

D

8.3

L

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=2.5A, VGS=0V

2/8

2010.08 - Rev.A

Data Sheet

www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.

TT8M1

 Electrical characteristics (Ta = 25C)

<Tr2(Pch)>

Parameter Conditions

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Yfs l 2.5 - - S VDS=10V, ID=2.5A

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=10V, VDS=0V

20 - - V ID=1mA, VGS=0V

- 1 AVDS=20V, VGS=0V

0.3 - 1.0 V VDS=10V, ID=1mA

-4968 I

R

DS (on)

100 150 ID=1.2A, VGS=1.8V

m

-6895 I

*

- 140 280 ID=0.5A, VGS=1.5V

*

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

- 1270 - pF VDS=10V

- 100 - pF VGS=0V

- 90 - pF f=1MHz

-9-nsI

*

*

- 30 - ns VGS=4.5V

*

*

- 120 - ns R

*

*

*

*

- 85 - ns RG=10

*

*

- 12 - nC ID=2.5A, VDD 10V

*

*

- 2.5 - nC VGS=4.5V,RL 4

-2-nCR

*

*

=2.5A, VGS=4.5V

D

=1.2A, VGS=2.5V

D

=1.2A, VDD 10V

D

8.3

L

=10

G

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

--1.2 V Is=2.5A, VGS=0V

Conditions

3/8

2010.08 - Rev.A