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1.5V Drive Nch + Pch MOSFET
TT8M1
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) High power package (TSST8).
3) Low voltage drive (1.5V drive).
Application
Switching
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol :M01
Packaging specifications
Package Taping
Type
Code TR
Basic ordering unit (pieces) 3000
TT8M1
Absolute maximum ratings (Ta = 25C)
Parameter Unit
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Power dissipation
Symbol
DSS
GSS
D
DP
s
sp
P
D
Tr1 : N-ch Tr2 : P-ch
*1
*1
*2
Channel temperature Tch C
Range of storage temperature Tstg C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Limits
20 20 V
10 10 V
2.5 2.5 A
10 10 A
0.8
0.8 A
10 10 A
1.25
1
W / TOTAL
W / ELEMENT
150
55 to +150
Inner circuit
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
1/8
2010.08 - Rev.A
Data Sheet
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©2010 ROHM Co., Ltd. All rights reserved.
TT8M1
Electrical characteristics (Ta = 25C)
<Tr1(Nch)>
Symbol Min. Typ. Max. Unit
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
GSS
(BR)DSS
DSS
GS (th)
--10 AVGS=10V, VDS=0V
20 - - V ID=1mA, VGS=0V
--1AVDS=20V, VGS=0V
0.3 - 1.0 V VDS=10V, ID=1mA
-5272 I
Static drain-source on-state
resistance
R
DS (on)
-6590 I
*
85 120 ID=1.2A, VGS=1.8V
m
100 140 ID=0.5A, VGS=1.5V
iss
oss
rss
d(on)
d(off)
gd
*
- 260 - pF VDS=10V
- 65 - pF VGS=0V
- 35 - pF f=1MHz
-9-nsI
*
*
- 17 - ns VGS=4.5V
*
*
r
- 28 - ns R
*
*
- 17 - ns RG=10
*
*
f
- 3.6 - nC ID=2.5A, VDD 10V
*
*
g
- 0.7 - nC VGS=4.5V,RL 4
*
*
gs
- 0.6 - nC RG=10
*
*
Forward transfer admittance l Yfs l 2.7 - - S VDS=10V, ID=2.5A
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
ConditionsParameter
=2.5A, VGS=4.5V
D
=2.5A, VGS=2.5V
D
=1.2A, VDD 10V
D
8.3
L
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter Conditions
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
- - 1.2 V Is=2.5A, VGS=0V
2/8
2010.08 - Rev.A
Data Sheet
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©2010 ROHM Co., Ltd. All rights reserved.
TT8M1
Electrical characteristics (Ta = 25C)
<Tr2(Pch)>
Parameter Conditions
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state
resistance
Forward transfer admittance l Yfs l 2.5 - - S VDS=10V, ID=2.5A
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
--10 AVGS=10V, VDS=0V
20 - - V ID=1mA, VGS=0V
- 1 AVDS=20V, VGS=0V
0.3 - 1.0 V VDS=10V, ID=1mA
-4968 I
R
DS (on)
100 150 ID=1.2A, VGS=1.8V
m
-6895 I
*
- 140 280 ID=0.5A, VGS=1.5V
*
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
- 1270 - pF VDS=10V
- 100 - pF VGS=0V
- 90 - pF f=1MHz
-9-nsI
*
*
- 30 - ns VGS=4.5V
*
*
- 120 - ns R
*
*
*
*
- 85 - ns RG=10
*
*
- 12 - nC ID=2.5A, VDD 10V
*
*
- 2.5 - nC VGS=4.5V,RL 4
-2-nCR
*
*
=2.5A, VGS=4.5V
D
=1.2A, VGS=2.5V
D
=1.2A, VDD 10V
D
8.3
L
=10
G
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
--1.2 V Is=2.5A, VGS=0V
Conditions
3/8
2010.08 - Rev.A
Data Sheet
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©2010 ROHM Co., Ltd. All rights reserved.
TT8M1
Electrical characteristic curves (Ta = 25° C)
<Tr1(Nch)>
5
[A]
4
D
3
2
DRAIN CURRENT : I
1
0
0 0.2 0.4 0.6 0.8 1
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.1 Typical Output Characteristics( Ⅰ) Fig.2 Typical Output Characteristics( Ⅱ)
1000
Ta= 25°C
Pulsed
)[mΩ]
on
(
DS
100
VGS= 4.5V
VGS= 1.5V
Ta=25°C
Pulsed
VGS= 2.5V
VGS= 2.0V
VGS= 1.8V
VGS= 1.2V
VGS= 1.0V
VGS= 1.5V
VGS= 1.8V
VGS= 2.5V
VGS= 4.5V
5
4
[A]
D
3
2
1
DRAIN CURRENT : I
0
0246810
DRAIN-SOURCE VOLTAGE : VDS[V]
1000
VGS= 4.5V
Pulsed
)[mΩ]
on
(
DS
100
VGS= 4.5V
VGS= 2.5V
VGS= 1.8V
VGS= 1.2V
Ta=25°C
Pulsed
VGS= 1.5V
VGS= 1.0V
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
10
VDS= 10V
Pulsed
[A]
D
1
0.1
0.01
DRAIN CURRENT : I
0.001
0 0.5 1 1.5 2
GATE-SOURCE VOLTAGE : VGS[V]
Fig.3 Typical Transfer Characteristics
1000
VGS= 2.5V
Pulsed
)[mΩ]
on
(
DS
100
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.01 0.1 1 10
DRAIN-CURRENT : ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)
1000
VGS= 1.8V
Pulsed
)[mΩ]
on
(
DS
100
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.01 0.1 1 10
DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ)
Ta= 125°C
Ta= 75°C
T
= 25°C
a
Ta= − 25°C
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.01 0.1 1 10
DRAIN-CURRENT : ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ)
1000
VGS= 1.5V
Pulsed
)[mΩ]
on
(
DS
100
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.01 0.1 1 10
DRAIN-CURRENT : ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅴ)
Ta= 125°C
T
= 75°C
a
= 25°C
T
a
T
= − 25°C
a
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.01 0.1 1 10
DRAIN-CURRENT : ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ)
10
VDS= 10V
Pulsed
1
0.1
0.01 0.1 1 10
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
DRAIN-CURRENT : ID[A]
Fig.9 Forward Transfer Admittance
vs. Drain Current
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
4/8
2010.08 - Rev.A
Data Sheet
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©2010 ROHM Co., Ltd. All rights reserved.
TT8M1
10
VGS=0V
Pulsed
[A]
s
1
Ta= 125°C
0.1
SOURCE CURRENT : I
0.01
0 0.5 1 1.5
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
5
[V]
GS
4
3
2
1
GATE-SOURCE VOLTAGE : V
0
012345
TOTAL GATE CHARGE : Qg [nC]
Fig.13 Dynamic Input Characteristics
Ta= 75°C
Ta= 25°C
Ta= − 25°C
Ta=25°C
VDD=10V
ID=2.5A
RG=10Ω
Pulsed
200
)[mΩ]
150
ON
(
DS
100
50
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
0
0510
GATE-SOURCE VOLTAGE : VGS[V]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
100
CAPACITANCE : C [pF]
10
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : VDS[V]
ID= 2.5A
ID= 1.25A
C
rss
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
Ta=25°C
Pulsed
Ta=25°C
f=1MHz
VGS=0V
C
iss
C
oss
1000
t
f
100
t
d(on)
10
SWITCHING TIME : t [ns]
1
0.01 0.1 1 10
DRAIN-CURRENT : ID[A]
Fig.12 Switching Characteristics
t
d(off)
t
Ta=25°C
VDD=10V
VGS=4.5V
RG=10Ω
Pulsed
5/8
2010.08 - Rev.A
Data Sheet
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©2010 ROHM Co., Ltd. All rights reserved.
TT8M1
<Tr2(Pch)>
4
VGS= -1.3V
VGS= -4.5V
VGS= -2.5V
VGS= -1.8V
VGS= -1.5V
Ta=25°C
Pulsed
VGS= -1.1V
VGS= -1.5V
VGS= -1.8V
VGS= -2.5V
VGS= -4.5V
3
[A]
D
2
1
DRAIN CURRENT : -I
0
0 0.2 0.4 0.6 0.8 1
DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.1 Typical Output Characteristics( Ⅰ) Fig.2 Typical Output Characteristics( Ⅱ) Fig.3 Typical Transfer Characteristics
1000
Ta=25°C
Pulsed
(ON)[mΩ]
DS
100
4
VGS= -10V
V
= 1.8V
GS
VGS= -1.5V
VGS= -1.4V
VGS= -1.3V
VGS= -1.2V
VGS= -1.1V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
[A]
3
D
2
1
DRAIN CURRENT : -I
0
0246810
1000
VGS= -4.5V
Pulsed
(ON)[mΩ]
DS
100
Ta=25°C
Pulsed
10
VDS= -10V
[A]
D
DRAIN CURRENT : -I
Pulsed
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
0.01
0.001
0 0.5 1 1.5
GATE-SOURCE VOLTAGE : -VGS[V]
1000
VGS= -2.5V
Pulsed
(ON)[mΩ]
DS
100
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain
1000
VGS= -1.8V
Pulsed
(ON)[mΩ]
DS
100
RESISTANCE : R
10
STATIC DRAIN-SOURCE ON-STATE
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ)
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
RESISTANCE : R
10
STATIC DRAIN-SOURCE ON-STATE
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain
1000
VGS= -1.5V
Pulsed
(ON)[mΩ]
DS
100
RESISTANCE : R
10
STATIC DRAIN-SOURCE ON-STATE
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅴ)
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
RESISTANCE : R
10
STATIC DRAIN-SOURCE ON-STATE
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ)
100
VDS= -10V
Pulsed
10
1
0
0.1 1 10
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
DRAIN-CURRENT : -ID[A]
Fig.9 Forward Transfer Admittance
vs. Drain Current
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
6/8
2010.08 - Rev.A
Data Sheet
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©2010 ROHM Co., Ltd. All rights reserved.
TT8M1
300
250
200
(ON)[mΩ]
DS
150
100
50
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
CAPACITANCE : C [pF]
ID= -1.2A
0
0246810
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
10000
1000
100
Ta=25°C
f=1MHz
VGS=0V
10
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : -VDS[V]
ID= -2.5A
C
oss
C
rss
Fig.13 Typical Capacitance
vs. Drain-Source
Ta=25°C
Pulsed
C
iss
10
VGS=0V
Pulsed
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
REVERSE DRAIN CURRENT : -Is [A]
0 0.2 0.4 0.6 0.8 1 1.2
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
10000
1000
100
10
SWITCHING TIME : t [ns]
1
0.01 0.1 1 10
td(off)
t
f
t
r
Fig.14 Switching Characteristics
td(on)
DRAIN-CURRENT : -ID[A]
Ta=25°C
VDD= -10V
VGS=-4.5V
RG=10Ω
Pulsed
5
[V]
GS
4
3
2
1
0
GATE-SOURCE VOLTAGE : -V
02468101214
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
Ta=25°C
VDD= -10V
ID= -2.5A
RG=10Ω
Pulsed
7/8
2010.08 - Rev.A
Data Sheet
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©2010 ROHM Co., Ltd. All rights reserved.
TT8M1
%
V
V
F
it
S
F
S
F
it
S
%
V
V
V
F
S
Measurement circuits
<Tr1(Nch)>
V
GS
R
G
D.U.T.
Pulse width
D
I
V
D
R
L
V
DD
50%
10%
GS
DS
10% 10%
td(on)
90%
50%
90% 90
td(off)
tr
tf
ton toff
ig.1-1 Switching time measurement circu
V
GS
I
G(Const.)
D.U.T.
ig.2-1 Gate charge measurement circuit
<Tr2(Pch)>
D
I
V
GS
D.U.T.
R
G
Fig.1-2 Switching waveforms
V
G
D
I
V
D
R
L
V
GS
Q
g
Qgs Qgd
V
DD
Charge
Fig.2-2 Gate Charge Waveform
Pulse width
GS
V
D
R
L
V
DD
10%
50%
90%
50%
10% 10
DS
90% 90%
t
d(on)
t
r
t
on
t
d(off)
t
f
t
off
ig.3-1 Switching time measurement circu
D
I
GS
R
L
D.U.T.
V
DD
I
G(Const.)
V
R
G
V
D
Fig.3-2 Switching waveforms
V
G
Q
g
GS
QgsQ
gd
Charge
ig.4-1 Gate charge measurement circuit
Fig.4-2 Gate charge waveform
Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
8/8
2010.08 - Rev.A
Notes
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The content specied herein is subject to change for improvement without notice.
The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
Notice
The Products specied in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, ofce-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specied in this document are not designed to be radiation tolerant.
While ROHM always makes ef forts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
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The Products are not designed or manufactured to be used with any equipment, device or
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A
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