ROHM TT8J1 Schematic

A

C

1.5V Drive Pch+Pch MOSFET

TT8J1

zStructure zDimensions (Unit : mm)

Silicon P-channel MOSFET

zFeatures

1) Low On-resistance.

2) High Power Package.

3) Low voltage drive. (1.5V)

zApplications

Switching

zPackaging specifications zInner circuit

Type

TT8J1

Package Code Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for the Tr1 and Tr2.>

Parameter Drain-source voltage Gate-source voltage

Drain current

Source current (Body diode)

Total power dissipation Channel temperature

Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board

Continuous Pulsed Continuous Pulsed

Symbol

DSS GSS

D

DP

S

SP

P

D

∗1

∗1 ∗2

−55 to +150

Limits

−12 ±10

±2.5

±10

−0.8

−10

1.25

1.0

150

W / TOTAL

W / ELEMENT

zThermal resistance

Parameter

hannel to ambient

∗ Mounted on a ceramic board

Symbol Limits Unit

∗

Rth(ch-a)

100 125

°C / W / TOTAL

°C / W / ELEMENT

TSST8

Abbreviated symbol : J01

(8) (7)

∗2

∗1

(1) (2)

∗1 ESD PROTECTION DIODE ∗2 BODY DIODE

Unit

VV VV AI AI AI AI

°CTch °CTstg

(8) (7) (5)(6)

(1) (2) (4)(3)

(6) (5)

∗2

(3) (4)

Each lead has same dimensions

(1) Tr1 Source

∗1

(2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain

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A

TT8J1 Data Sheet

zElectrical characteristics (Ta=25°C)

Parameter Symbol Gate-source leakage Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current Gate threshold voltage

Static drain-source on-state resistance

V

R

Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗ Pulsed

Min. Typ. Max.

I

GSS

−−±10 µAVGS=±10V, VDS=0V

Unit

−12 −−VID= −1mA, VGS=0V

I

DSS

GS (th)

DS (on)

Y

C

C C

t

d (on)

t

d (off)

Q

V

−−−1 µAV

−0.3 −−1.0 V V

− 44 61 I

− 60 84 mΩ

∗

− 110 220 I

∗

3.5 −−SV

fs

− 1350 − pF V

iss

− 130

oss

−

rss

∗

−

∗

−

t

r

∗

−

∗

−

t

f

∗

−

g

∗

−

gs

∗

−−nC

gd

− pF V

− pF f=1MHz

125

9

− ns

35

− ns

130

− ns

85

− ns

13

− nC

2.5

− nC

2.0

Min. Typ. Max.

∗

SD

−−−1.2 V IS= −2.5A, VGS=0VForward voltage

mΩ

mΩ− 81 121 ID= −1.2A, VGS= −1.8V mΩ

Unit

Conditions

= −12V, VGS=0V

DS

= −6V, ID= −1mA

DS

= −2.5A, VGS= −4.5V

D

I

= −1.2A, VGS= −2.5V

D

= −0.5A, VGS= −1.5V

D

= −6V, ID= −2.5A

DS

= −6V

DS

=0V

GS

V

DD

−6V

GS

= −4.5V

V ID= −1.2A

R

L

5Ω

G

=10Ω

R V

−6V

DD

V

=

−4.5V

GS

I

=

−2.5A

D

RL 2.4Ω / RG=10Ω

Conditions

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E

.

E

TT8J1 Data Sheet

zElectrical characteristic curves

10

Ta=25℃ Pulsed

8

[A]

D

6

4

DRAIN CURRENT - I

2

0

0 0.2 0.4 0.6 0.8 1

DRAIN-SOURCE VOLTAGE -VDS[V]

VGS= -10V

= -4.5V

V

GS

= -4.0V

V

GS

= -2.5V

V

GS

V

= -2.0V

GS

VGS= -1.6V

= -1.2V

V

GS

10

8

[A]

D

6

VGS= -10V V

= -4.5V

GS

= -2.5V

V

GS

4

DRAIN CURRENT -I

2

0

Ta=25 Pulsed

VGS= -1.8V

VGS= -1.5V

VGS= -1.2V

0246810

DRAIN-SOURCE VOLTAGE -V

℃

[V]

DS

Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics

10

VDS= -6V Pulsed

[A]

D

1

Ta= 125

Ta= 75°C Ta= 25°C

Ta= - 25°C

°C

0.1

DRAIN CURRENT : -I

0.01

00.511.5

GATE-SOURCE VOLTAGE : -V

[V]

GS

1000

(on) [mΩ]

DS

100

Ta=25 Pulsed

℃

RESISTANCE : R

10

STATIC DRAIN-SOURCE ON-STAT

0.1 1 10

DRAIN CURRENT : -I

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ)

1000

VGS= -1.8V Pulsed

(on) [mΩ]

DS

100

RESISTANCE : R

10

STATIC DRAIN-SOURCE ON-STAT

0.1 1 10 DRAIN CURRENT : -I

Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ)

VGS= -1.5V

= -1.8V

V

GS

= -2.5V

V

GS

= -4.5V

V

GS

[A]

D

Ta= 125 Ta= 75°C Ta= 25°C Ta= - 25°C

[A]

D

1000

VGS= -4.5V Pulsed

(on) [mΩ]

DS

100

°C

Ta= 125 Ta= 75° C

RESISTANCE : R

10

STATIC DRAIN-SOURCE ON-STAT

Ta= 25° C Ta= - 25°C

0.1 1 10

DRAIN CURRENT : -I

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ)

1000

VGS= -1.5V Pulsed

(on) [mΩ]

DS

[A]

D

100

°C

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STAT

10

0.1 1 10 DRAIN CURRENT : -I

Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ)

Ta= 125 Ta= 75° C Ta= 25° C Ta= - 25°C

[A]

D

°C

1000

VGS= -2.5V Pulsed

(on) [mΩ]

DS

100

RESISTANCE : R

10

STATIC DRAIN-SOURCE ON-STAT

0.1 1 10

DRAIN CURRENT : -I

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ)

10

VGS=0V

Pulsed

°C

Ta= 125

1

Ta= 75°C Ta= 25°C

Ta= - 25° C

0.1

REVERSE DRAIN CURRENT : -Is [A]

0.01

0 0.2 0.4 0.6 0.8 1 1.2

SOURCE-DRAIN VOLTAGE : -VSD [V]

Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage

Ta= 125 Ta= 75°C Ta= 25°C Ta= - 25°C

[A]

D

°C

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[

]

TT8J1 Data Sheet

200

Ta=25 Pulsed

℃

100

VDS= -6V Pulsed

150

(on) [mΩ]

DS

100

ID= -2.5A

ID= -1.2A

50

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STAT

0

0510

GATE-SOURCE VOLTAGE : -V

Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage

[V]

GS

10

: |Yfs| [S]

1

0

FORWARD TRANSFER ADMITTANCE

0.1 1 10

Ta= - 25°C Ta= 25°C Ta= 75°C Ta= 125°C

DRAIN CURRENT : -ID [A]

Fig.11 Forward Transfer Admittance vs. Drain Current

5

Ta=25℃

[V]

V

= -6V

GS

DD

4

I

= -2.5A

D

R

=10Ω

G

Pulsed

3

2

1

GATE-SOURCE VOLTAGE : -V

0

0 2 4 6 8 10 12 14

TOTAL GATE CHARGE : Qg [nC]

Fig.12 Dynamic Input Characteristics

10000

1000

Crss

100

CAPACITANCE : C [pF]

Coss

Ciss

10

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : -V

Fig.13 Typical Capacitance vs. Drain-Source Voltage

Ta=25℃ f=1MHz V

=0V

GS

[V]

DS

1000

td(off)

tf

ns

100

10

SWITCHING TIME : t

td(on)

tr

1

0.01 0.1 1 10

DRAIN CURRENT : -I

Fig.14 Switching　Characteristics

D

[A]

Ta=25℃

= -6V

V

DD

V

=-4.5V

GS

R

=10Ω

G

Pulsed

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A

F

it

%

V

F

it

S

Fig.2-2 Gate Charge Waveform

V

TT8J1 Data Sheet

zMeasurement circuits

Pulse width

D

V

R

G

I

GS

D.U.T.

V

DS

R

L

V

DD

GS

10%

50%

10% 10

DS

t

90% 90%

d(on)

t

r

t

on

90%

t

d(off)

t

off

50%

t

f

ig.1-1 Switching Time Measurement Circu

Fig.1-2 Switching Waveforms

V

G

I

D

D.U.T.

I

G(Const.)

V

GS

R

G

ig.2-1 Gate Charge Measurement Circu

V

D

R

L

V

DD

GS

Q

g

gs

Q

gd

Charge

zNotice

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.

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Appendix

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM

CO.,LTD.

The content specified herein is subject to change for improvement without notice.

The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you

wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM

upon request.

Examples of application circuits, circuit constants and any other information contained herein illustrate the

standard usage and operations of the Products. The peripheral conditions must be taken into account

when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specified in this document. However, should

you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no re-

sponsibility for such damage.

The technical information specified herein is intended only to show the typical functions of and examples

of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to

use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no re-

sponsibility whatsoever for any dispute arising from the use of such technical information.

The Products specified in this document are intended to be used with general-use electronic equipment

or devices (such as audio visual equipment, office-automation equipment, communication devices, elec-

tronic appliances and amusement devices).

The Products are not designed to be radiation tolerant.

While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard against the

possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as

derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your

use of any Product outside of the prescribed scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or system

which requires an extremely high level of reliability the failure or malfunction of which may result in a direct

threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment,

aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear

no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intend-

ed to be used for any such special purpose, please contact a ROHM sales representative before purchasing.

If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.

Notes

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Appendix-Rev4.0

ROHM TT8J1 Schematic [ru]

Specifications and Main Features

Frequently Asked Questions

User Manual