ROHM SSTA56, MMSTA56 Technical data
SSTA56 / MMSTA56
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Transistors
PNP general purpose transistor
SSTA56 / MMSTA56
Features
1) BV
CEO
40V (IC = 100PA)
2) Complements the SSTA06 / MMSTA06.
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Package, marking and packaging specifications
Part No. SSTA56
Packaging type
Marking
Code
Basic ordering unit (pieces)
SST3
R2G
T116
3000
MMSTA56
SMT3
R2G
T146
3000
External dimensions (Unit : mm)
SSTA56
2.9±0.2
1.9±0.2
0.95
0.95
(2)
(1)
(3)
+0.1
0.4
ROHM : SST3
JEDEC : SOT-23
MMSTA56
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
−0.05
All terminals have same dimensions
2.9±0.2
1.9±0.2
0.95
0.95
(2)
(1)
(3)
+0.1
0.4
−0.05
All terminals have same dimensions
+0.2
0.95
−0.1
0.45±0.1
0.2
0.2
0.1
−
±
+
1.3
2.4
0.2
0.2
0.1
±
−
+
2.8
1.6
0~0.1
0.2Min.
+0.1
0.15
−0.06
1.1
+0.1
0.15
−0.06
+0.2
−0.1
0.8±0.1
0~0.1
0.3Min.
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
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Absolute maximum ratings (Ta=25qC)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗ Mounted on a 7×5×0.6mm CERAMIC SUBSTRATE
Electrical characteristics (T a=25qC)
Emitter-base breakdown voltage
Parameter Symbol Min. Typ. Max.
Collector-emitter breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
EBO
BV
BV
CEO
I
CBO
I
CEO
CE(sat)
V
BE(on)
V
h
FE
fT 50
CBO
V
V
CEO
V
EBO
I
C
C
P
Tj
Tstg
−80
100
100
−55 to +150
−4
−
−
−
−
−
−
−−
−−−1.2
−
− V
−−
Limits
−80
−80
−4
−0.5
0.2
Unit
V
V
V
A
W
0.35 W ∗
150
°C
°C
Unit
V
−
−
−0.1
−1
0.25
−
−
μA
MHz
C
=
−100mA
I
V
I
C
=
−1mA
V
CB
=
−80V
V
CE
=
−60V
C/IB
=
I
V
V
CE/IB
V
−
=
V
CE
=
−1V , I
CE
=
−1V , I
CE
=
−1V , I
V
−100mA/−10mA
−1V/100mA
C
=
−10mA
C
=
−100mA
E
=
100mA , f=100MHz
Conditions
Rev.A 1/2
Transistors
z
!
Electrical characteristic curves
500
Ta=25°C
mA)
400
300
200
100
-COLLECTOR CURRENT (
C
I
0
0.4 0.8 1.2 1.6
VCE-COLLECTOR-EMITTER VOLTAGE (
Fig.1 Grounded emitter output
characteristics
3.5mA
3.0mA
4.5mA
4.0mA
5.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
IB=0mA
2.00
V)
1000
100
-DC CURRENT GAIN
FE
h
10
1 2 5 10 20 50 100 200 500 1000
IC-COLLECTOR CURRENT (
Ta=25°C
VCC=5V
mA)
Fig.2 DC current gain vs. collector
current ( Ι )
SSTA56 / MMSTA56
1000
Ta=125°C
25°C
3V
1V
100
hFE-DC CURRENT GAIN
10
1
−40°C
10 100 100
IC-COLLECTOR CURRENT (
Fig.3 DC current gain vs. collector
current ( ΙΙ )
VCE=3V
mA)
0
V)
I
C
/
IB=10
0.3
Ta=125°C
0.2
0.1
COLLECTOR EMITTER SATURATION VOLTAGE (
CE(SAT)
0
V
1 10 100 1000
IC-COLLECTOR CURRENT (
mA)
−40
25
°C
°C
Fig.4 Collector emitter saturation
voltage vs. collector current
500
100
pF)
CAPACITANCE (
10
5
0.5
1 10 50
REVERSE BIAS VOLTAGE (
Cib
Cob
Ta=25
f=1MHz
V)
°C
Fig.7 Input/output capecitance
vs. voltage
1.8
V)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
BASE EMITTER SATURATION VOLTAGE (
0.2
BE(SAT)
V
0
1 10 100 1000
IC-COLLECTOR CURRENT (
Fig.5 Base-emitter saturation
voltage vs. collector current
1000
MHz)
100
10
CURRENT GAIN-BANDWIDTH PRODUCT (
1
10 100 1000
IC-COLLECTOR CURRENT (
Fig.8 Gain bandwidth product
!
vs. collector current
Ta=25
I
C
/
IB=10
mA)
Ta=25
VCE=10V
mA)
°C
1.8
1.6
V)
1.4
1.2
1.0
0.8
0.6
0.4
BASE EMITTER VOLTAGE (
0.2
BE(ON)
V
0
1 10 100 1000
Ta=−40
°C
25
°C
125
°C
IC-COLLECTOR CURRENT (
VCE=3V
mA)
Fig.6 Grounded emitter propagation
characteristics
°C
Rev.A 2/2
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