ROHM UMZ8N Schematic [ru]

EMZ8 / UMZ8N

Transistors

Power management (dual transistors)

EMZ8 / UMZ8N

zFeature

1) Both a 2SA2018 chip and 2SC2412K chip in a EMT
or UMT package.

zEquivalent circuits

(3) (2) (1)

Tr

Tr

1

2

zDimensions(Unit : mm)

EMZ8

(6) (5) (4)

(1) (2) (3)

ROHM : EMT6
EIAJ :

UMZ8N

(6) (5)(4)

Each lead has same dimensions

(4) (5) (6)

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current
Collector power dissipation

Junction temperature
Storage temperature

120mW per element must not be exceeded.

∗

V
V
V

I

Tstg

CBO
CEO
EBO

I

CP

Tj

C

C

Limits

Tr2

Tr1

60

−15
50

−12

7

−6
150

−500

−1 −

150 (TOTAL)

150

−55 to +150 °C

zPackage, marking, and packaging specifications

Part No. UMZ8N
Package
Marking

Code

Basic ordering unit (pieces)

EMZ8
EMT6

Z8

T2R

8000

UMT6

Z8
TR

3000

Unit

V
V
V

mA

A

mWP

°C

ROHM : UMT6
EIAJ : SC-88

∗

(1) (2)(3)

Each lead has same dimensions

Rev.C 1/4

Transistors

zElectrical characteristics (Ta=25°C)

Tr1

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance

Tr2

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance

z

Electrical characteristic curves

<Tr1>

1000

500

(mA)

200

C

100

50

20
10

5

2

COLLECTOR CURRENT : I

1

Fig.1 Grounded Emitter Propagation

1000

500

200
100

(V)

CE (sat)

COLLECTOR SATURATION

VOLTAGE : V

Parameter Symbol Min. Typ. Max. Unit Conditions

Parameter

VCE=2V

Ta=125°C
Ta=25°C
Ta= −40°C

0 0.5 1.0 1.5

BASE TO EMITTER VOLTAGE : V

(V)

BE

Characteristics

IC / IB=20

Ta=125°C
Ta=25°C

50

Ta= −40°C

20
10

5

2
1

1 2 5 10 20 50 100 200 500 1000

COLLECTOR CURRENT : I

C

(mA)

Fig.4 Collector-Emitter Saturation

Voltage vs.
Collector Current (Ι)

BV
BV
BV

V

CBO
CEO
EBO

I

CBO

I

EBO

CE(sat)

h

FE

f

T

Cob

−15 −−

−12

270

−

−0.1

260

6.5

−

−

−

−

−0.1

−

−0.1

−0.25

680

−

−

−

−6

−

−

−

−

−

µA
µA

MHz

pF

Symbol Min. Typ. Max. Unit

BV
BV
BV

V

CBO
CEO
EBO

I

CBO

I

EBO

CE(sat)

h

FE
T

f

Cob

60

−−

50

−

180

−

−

−

−

−

2

I

=700µA

B

−

−

0.1

0.1

0.4

560

−

3.5

(mA)

C

7

−

−

−

120

−

−

200
180
160
140
120
100

80
60
40

COLLECTOR CURRENT : I

20

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

IB=100µA
IB=0µA

µA
µA

MHz

pF

IB=600µA

I

=500µA

B

IB=400µA

IB=300µA

IB=200µA

Ta=25
pulsed

COLLECTOR TO EMITTER VOLTAGE : V

Fig.2 Typical Output Characteristics

1000

500

200
100

(mV)

50

IC / IB=50

CE (sat)

IC / IB=20

20

IC / IB=10

10

5

COLLECTOR SATURATION

VOLTAGE : V

2
1

1 2 5 10 20 50 100 200 500 1000

COLLECTOR CURRENT : I

Ta=25°C

(mA)

C

Fig.5 Collector-Emitter Saturation

Voltage vs.
Collector Current (ΙΙ)

V

IC = −10µA

V

=

−1mA

IC

V

IE

=

−10µA

=

−15V

VCB

=

−6V

VEB

V

−

V
V
V

V

−

=

−200mA/−10mA

IC/IB
VCE

=

−2V , IC = −10mA

=

−2V , IE = 10mA , f = 100MHz

VCE

=

−10V , IE = 0A , f = 1MHz

VCB

C

=

50µA

I
I

C

=

1mA

I

E

=

50µA

V

CB

=

60V

EB

=

7V

V
I

C/IB

=

50mA/5mA

CE

= 6V ,

I

C

=

V

CE

=

12V , I

E

V
V

°C

(V)

CE

=

CB

=

12V , I

E

= 0A , f =

1000

500

FE

200
100

50

20
10

5

DC CURRENT GAIN : h

2
1

1 2 5 10 20 50 100 200 500 1000

1mA

−2mA , f = 100MHz

Ta=125°C
Ta=25°C
Ta= −40°C

COLLECTOR CURRENT : I

Fig.3 DC Current Gain vs.

10000

(mV)

5000

BE (sat)

2000
1000

BASER SATURATION VOLTAGE : V

Ta= −40°C
Ta=25°C
Ta=125°C

500

200
100

50

20
10

1 2 5 10 20 50 100 200 500 1000

COLLECTOR CURRENT : I

Fig.6 Base-Emitter Saturation

Voltage vs.Collecter Current

EMZ8 / UMZ8N

Conditions

1MHz

Collector Current

VCE=2V

C

IC / IB=20

(mA)

C

(mA)

Rev.C 2/4