Page 1
Small Signal Transistor Arrays
6°
12°
45°
0 to 0.1
0.5
7.7±0.3
0.5±0.2
1
56
10
6.5±0.3
10–0.4±0.1
1.5±0.1
0.8
12° 6°
8–0.9±0.1
5.5±0.3
0.2
+0.1
–0.05
UN217
Transistor array to drive the small motor
Features
■
●
Small and lightweight
●
Low power consumption (low V
●
Low-voltage drive
●
With 4 elements incorporated (SO–10C)
Applications
■
●
Video cameras
●
Cameras
●
Portable CD players
●
Small motor drive circuits in general for electronic equipment.
Absolute Maximum Ratings (Ta=25±2˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Emitter to base voltage V
Collector current I
Total power dissipation PT* 0.5 W
Junction temperature T
Storage temperature T
Note: ± marks used above: +: NPN part, –: PNP part
* TC = 25˚C only when the elements are active
CBO
V
CEO
EBO
C
j
stg
transistor used)
CE(sat)
±12 V
±10 V
±7V
±1A
150 ˚C
–55 to +150 ˚C
Internal Connection
1
2
3
4
5
Unit: mm
SO–10C Package
10
9
8
7
6
1
Page 2
Small Signal Transistor Arrays
Electrical Characteristics (Ta=25±2˚C)
■
Parameter Symbol Conditions min typ max Unit
Collector cutoff current I
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Forward current transfer ratio h
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
Forward voltage (DC) V
*Pulse measurement
CBO
CBO
CEO
EBO
FE
V
CE(sat)1
T
ob
F
(NPN) VCB = 10V 1
(PNP) VCB = –10V –1
(NPN) IC = 10µA12
(PNP) IC = –10µA –12
(NPN) IC = 1mA 10
(PNP) IC = –1mA –10
(NPN) IE = 10µA7
(PNP) IE = –10µA–7
(NPN) VCE = 1V, IC = 0.5A* 200 800
(PNP) VCE = –1V, IC = – 0.5A* 200 800
(NPN) IC = 1A, IB = 30mA 0.3
(PNP) IC = –1A, IB = –30mA – 0.3
(NPN) VCB = 6V, IE = –50mA, f = 200MHz
(PNP) VCB = –6V, IE = 50mA, f = 200MHz
(NPN) VCB = 10V, IE = 0, f = 1MHz
(PNP) VCB = –10V, IE = 0, f = 1MHz
150
150
50
65
(NPN) IF = 1A 1.5
(PNP) IF = –1A –1.5
UN217
µA
V
V
V
V
MHz
pF
V
Characteristics charts of PNP transistor block
— Ta IC — V
P
T
0.6
)
0.5
W
(
T
0.4
0.3
0.2
0.1
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
)
2
–4.8
–4.0
)
A
(
–3.2
C
–2.4
–1.6
Collector current I
–0.8
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
CE
Ta=25˚C
IB=–14mA
–12mA
–10mA
–8mA
–6mA
–4mA
–2mA
IC — V
BE
–6
–5
)
A
(
–4
C
–3
–2
Collector current I
–1
0
0–2.4–0.4 –2.0–0.8 –1.6–1.2
)
Base to emitter voltage VBE (V
25˚C
Ta=75˚C –25˚C
VCE=–1V
)
Page 3
Small Signal Transistor Arrays UN217
V
— I
CE(sat)
–10
)
V
(
–3
CE(sat)
–1
–0.3
–0.1
–0.03
–0.01
–0.003
Collector to emitter saturation voltage V
–0.001
–0.01 –0.03
25˚C
–0.1 –0.3 –1 –3 –10
Collector current IC (A
Ta=75˚C
–25˚C
C
IC/IB=100/3
600
FE
500
400
300
200
100
Forward current transfer ratio h
)
Characteristics charts of NPN transistor block
0
–0.01 –0.03
hFE — I
C
VCE=–1V
Ta=75˚C
25˚C
–25˚C
–0.1 –0.3 –1 –3 –10
Collector current IC (A
)
pF
(
Cob — V
240
200
ob
160
120
80
40
CB
f=1MHz
I
=0
E
Ta=25˚C
Collector output capacitance C
0
–0.1 –0.3
)
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
)
— Ta IC — V
P
T
0.6
)
0.5
W
(
T
0.4
0.3
0.2
0.1
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
V
— I
CE(sat)
10
)
V
(
3
CE(sat)
1
0.3
0.1
0.03
0.01
0.003
Collector to emitter saturation voltage V
0.001
0.01 0.03
Ta=75˚C
25˚C
0.1 0.3 1 3 10
Collector current IC (A
)
C
IC/IB=100/3
–25˚C
)
CE
4.8
4.0
)
A
(
3.2
C
2.4
1.6
Collector current I
0.8
0
012210486
Collector to emitter voltage VCE (V
hFE — I
C
600
FE
500
400
Ta=75˚C
300
200
100
Forward current transfer ratio h
0
0.01 0.03
25˚C
–25˚C
0.1 0.3 1 3 10
Collector current IC (A
Ta=25˚C
IB=14mA
12mA
10mA
8mA
6mA
4mA
2mA
VCE=1V
)
IC — V
BE
6
5
)
A
(
4
C
3
2
25˚C
Ta=75˚C –25˚C
VCE=1V
Collector current I
1
0
02.40.4 2.00.8 1.61.2
f=1MHz
I
=0
E
Ta=25˚C
)
)
Base to emitter voltage VBE (V
Cob — V
120
)
pF
(
100
ob
80
60
40
20
CB
Collector output capacitance C
0
0.1 0.3
Collector to base voltage VCB (V
1 3 10 30 100
)
3
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