Transistors
General purpose transistor
(dual transistors)
EMZ7/UMZ7N
z
Features
1) Both a 2SA2018 chip and 2SC5585 chip in a EMT or
UMT package.
2) Mounting possible with EMT3 or UMT3 automatic
mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
5) Low V
CE(sat)
Structure
NPN / PNP epitaxial planar silicon transistor
External dimensions (Unit : mm)
EMZ7
(4)
0.22
(6)
0.13
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol
EMZ7/UMZ7N
UMZ7N
)
)
3
4
(
(3)
0.5
1.0
1.6
(2)(5)
0.5
(1)
1.2
1.6
0.5
: Z7
(
)
5
(
0.2
)
6
(
1.25
0.15
0.1Min.
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol
0.65
)
2
(
1.3
0.65
0.7
2.0
0.9
: Z7
)
1
(
2.1
Each lead has same dimensions
0to0.1
Equivalent Circuit
EMZ7 / UMZ7N
(3)
(2) (1)
Tr
Tr
2
(4) (5) (6)
z
Absolute maximum ratings (Ta=25qC)
1
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
∗
Tr
1
V
CBO
V
CEO
EBO
V
I
C
I
CP
P
C
15
12
6
500
1
150(TOTAL)
Tj 150
Tstg
−55 to +150
Limits
Tr
−15
−12
−6
−500
−1
2
Unit
V
V
V
mA
A
1
mW
∗
°C
°C
Rev.A 1/4
Transistors
Electrical characteristics (Ta=25qC)
Tr
1 (NPN)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Tr
2 (PNP)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Symbol
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE
(sat)
h
FE
f
T
Cob
Min.
Typ. Max. Unit Conditions
15
12
6
−
−
−
270
−
−
Min.
−15
−12
−6
−
−
−
270
−
−
−
−
−
−
−
90
−
320
7.5
Typ.
−
−
−
−
−
−100
−
260
6.5
0.1
0.1
250
680
Max.
−0.1
−0.1
−250
680
−
−
−
−
−
−
−
−
−
−
VI
V
I
V
I
μA
V
μA
V
I
mV
−
V
V
MHz
V
pF
Unit
V
V
V
μA
μA
mV
−
MHz
pF
C=
C=
E=
C
I
I
I
V
V
I
V
V
V
CB=
EB=
/I
CE
CE=
CB=
C
=
C
=
E
=
CB
EB
C/IB
CE/IC
CE
CB
10μA
1mA
10μA
B=
/I
EMZ7/UMZ7N
15V
6V
200mA /10mA
C=
2V/10mA
2V, I
C=
−10mA, f
10V, I
E=
0A, f
Conditions
−10μA
−1mA
−10μA
=
−15V
=
−6V
=
−200mA/−10mA
=
−2V/−10mA
=
−2V, I
C
=
10mA, f=100MHz
=
−10V, I
E
=
=
100MHz
=
1MHz
0A, f=1MHz
z
Packaging specifications
Packaging type
Code
Part No.
Basic ordering unit (pieces)
UMZ7N
EMZ7
TR
3000
−
Taping
T2R
8000
−
Rev.A 2/4