ROHM TT8M11 Technical data

4V Drive Nch + Pch MOSFET

TT8M11

Data Sheet

 Structure

Silicon N-channel MOSFET/
Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) Low voltage drive(4V drive).

3) Small surface mount package(TSST8).

 Application

Switching

 Packaging specifications

Package Taping

Type

Code TCR
Basic ordering unit (pieces) 3000

TT8M11 

 Absolute maximum ratings (Ta = 25C)

Parameter Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation

Symbol

DSS

GSS

D

DP

s

sp

P

D

Tr1 : N-ch Tr2 : P-ch

*1

*1

*2

Channel temperature Tch C
Range of storage temperature Tstg C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

Limits

30 30 V

20 20 V

3 2.5 A

12 10 A

0.8 0.8 A

12 10 A

1.25

1.0

W / TOTAL

W / ELEMENT

150

55 to 150

Dimensions (Unit : mm)

TSST8

(8) (7) (6) (5)

(1) (2) (3) (4)

Abbreviated symbol : M11

Inner circuit

(8) (7)

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

∗2

∗1

(1) (2)

1 ESD PROTECTION DIODE
2 BODY DIODE

(6) (5)

∗2

∗1

(3) (4)

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Data Sheet

TT8M11

 Electrical characteristics (Ta = 25C)

<Tr1(Nch)>

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

oss

d(on)

d(off)

fs

iss

rss

r

f

g

gs

gd

ConditionsParameter

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-5171 I

*

-6794 I

78 109 I

*

l 2.7 - - S VDS=10V, ID=3A

m

D

D

D

=3A, VGS=10V

=3A, VGS=4.5V

=3A, VGS=4V

- 140 - pF VDS=10V

- 55 - pF VGS=0V

- 28 - pF f=1MHz

-5-nsV

*

*

- 13 - ns VGS=4.5V

*

*

- 20 - ns RL=10

*

*

*

*

-3-nsR

*

*

- 2.5 - nC VDD 10V, ID=3A

*

*

- 0.8 - nC VGS=5V

- 0.6 - nC

*

*

15V, ID=1.5A

DD

=10

G

Body diode characteristics (Source-Drain)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=3A, VGS=0V

2/10

2011.09 - Rev.A

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Data Sheet

TT8M11

 Electrical characteristics (Ta = 25C)

<Tr2(Pch)>

Parameter Conditions

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

- 1 AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-6084 I

*

- 95 130 I

- 115 160 I

*

l 1.8 - - S VDS=10V, ID=2.5A

=2.5A, VGS=10V

D

m

=1.2A, VGS=4.5V

D

=1.2A, VGS=4V

D

- 460 - pF VDS=10V

- 65 - pF VGS=0V

- 40 - pF f=1MHz

-7-nsV

*

- 20 - ns VGS=10V

*

- 35 - ns RL=12.5

*

- 14 - ns RG=10

*

- 4.8 - nC VDD 15V, ID=2.5A

*

*

- 1.8 - nC VGS=5V

*

*

- 1.2 - nC

*

*

15V, ID=1.2A

DD

Body diode characteristics (Source-Drain)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

Conditions

--1.2 V Is=2.5A, VGS=0V

3/10

2011.09 - Rev.A

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Data Sheet

TT8M11

Electrical characteristic curves (Ta=25C)

〈Tr.1(Nch)〉

0

1

2

3

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=2.5V

T

a

=25°C

pulsed

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=2.8V

VGS=3.0V

0

1

2

3

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=2.5V

Ta=25°C
pulsed

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=2.8V

VGS=3.0V

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.5V

T

a

=25

°C

pulsed

VGS=4.0V

VGS=10V

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.5V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

4/10

2011.09 - Rev.A