ROHM STZ5.6N Datasheet

Diodes

Zener Diode Array

STZ5.6N

STZ5.6N

Applications

!

Constant voltage control
For the ESD measure of a signal line

Features

!

1) Designed for mounting on small surface areas

2) High reliability

3) Composite type with two anode/cathode elements

Construction

!

Silicon epitaxial planar

Absolute maximum ratings

!!!!

Parameter
Power dissipation
Junction temperature
Storage temperature

∗ Total of 2 elements

(Ta=25°C)

Symbol

∗

P
Tj

Tstg

−55~+150

Limits

200
150

External dimensions

!!!!

2.9±0.2

1.9±0.2

0.95 0.95

6 F

Week manufactured

0.4

ROHM : SMD3
EIAJ : SC-59

Unit
mW

˚C
˚C

(Units : mm)

+0.2

−0.1

1.6

+0.1

−0.05

2.8±0.2

0.15

1.1

+0.1

−0.06

+0.2

−0.1

0.8±0.1

0~0.1

0.3~0.6

Electrical characteristics

!!!!

Parameter
Zener voltage
Reverse current
Operating resistance
Rising operating resistance

Capacitance between terminals

(Ta=25°C)

Symbol Min. Typ.

Z

R

Z

ZK

T

C

Max. Unit Conditions

−

5.92

−−

−−

−−

−−

12

1.00
60

200

V5.31

µA

Ω

Ω

pF

Z

=5mAV

I
VR=2.5VI

Z

=5mAZ

I
IZ=0.5mAZ

f=1MH

Z

, VR=5V

Diodes

Others

!!!!

Item

Device configuration

Judgment contents

Electrical characteristic curves

!!!!

10m

Charge/discharge capacitance : 200pF±10%
Discharge resistance : 400Ω ±10% Discharge resistance : 330Ω

5 repetitions
No spark or smoke emitted : ±25kV

No element destruction : ±20kV
No malfunction : ± 8kV

Standard1

(Ta=25°C)

100

(pF)

T

IEC1000-4-2

Charge/discharge capacitance : 150pF

10 repetitions
No malfunction

Contact : ± 8kV
Suspended : ±15kV

300

STZ5.6N

1m

100µ

ZENER CURRENT : Iz (A)

10µ

4.0
ZENER VOLTAGE : Vz (V)

Fig.1 Zener characteristics

f=1MHz

10

5.0

6.0

1510

CAPACITANCE BETWEEN TERMINALS : C

REVERSE VOLTAGE : VR (V)

Fig.2 Capacitance between terminals

200

100

POWER DISSIPATION : Pd (mW)

0

25 50 100 150

0

AMBIENT TEMPERATURE : Ta (˚C)

Fig.3 Derating curve

characteristic