SSTA56 / MMSTA56
z
z
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Transistors
PNP general purpose transistor
SSTA56 / MMSTA56
Features
1) BV
CEO
40V (IC = 100PA)
2) Complements the SSTA06 / MMSTA06.
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Package, marking and packaging specifications
Part No. SSTA56
Packaging type
Marking
Code
Basic ordering unit (pieces)
SST3
R2G
T116
3000
MMSTA56
SMT3
R2G
T146
3000
External dimensions (Unit : mm)
SSTA56
2.9±0.2
1.9±0.2
0.95
0.95
(2)
(1)
(3)
+0.1
0.4
ROHM : SST3
JEDEC : SOT-23
MMSTA56
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
−0.05
All terminals have same dimensions
2.9±0.2
1.9±0.2
0.95
0.95
(2)
(1)
(3)
+0.1
0.4
−0.05
All terminals have same dimensions
+0.2
0.95
−0.1
0.45±0.1
0.2
0.2
0.1
−
±
+
1.3
2.4
0.2
0.2
0.1
±
−
+
2.8
1.6
0~0.1
0.2Min.
+0.1
0.15
−0.06
1.1
+0.1
0.15
−0.06
+0.2
−0.1
0.8±0.1
0~0.1
0.3Min.
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
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Absolute maximum ratings (Ta=25qC)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗ Mounted on a 7×5×0.6mm CERAMIC SUBSTRATE
Electrical characteristics (T a=25qC)
Emitter-base breakdown voltage
Parameter Symbol Min. Typ. Max.
Collector-emitter breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
EBO
BV
BV
CEO
I
CBO
I
CEO
CE(sat)
V
BE(on)
V
h
FE
fT 50
CBO
V
V
CEO
V
EBO
I
C
C
P
Tj
Tstg
−80
100
100
−55 to +150
−4
−
−
−
−
−
−
−−
−−−1.2
−
− V
−−
Limits
−80
−80
−4
−0.5
0.2
Unit
V
V
V
A
W
0.35 W ∗
150
°C
°C
Unit
V
−
−
−0.1
−1
0.25
−
−
μA
MHz
C
=
−100mA
I
V
I
C
=
−1mA
V
CB
=
−80V
V
CE
=
−60V
C/IB
=
I
V
V
CE/IB
V
−
=
V
CE
=
−1V , I
CE
=
−1V , I
CE
=
−1V , I
V
−100mA/−10mA
−1V/100mA
C
=
−10mA
C
=
−100mA
E
=
100mA , f=100MHz
Conditions
Rev.A 1/2
Transistors
z
!
Electrical characteristic curves
500
Ta=25°C
mA)
400
300
200
100
-COLLECTOR CURRENT (
C
I
0
0.4 0.8 1.2 1.6
VCE-COLLECTOR-EMITTER VOLTAGE (
Fig.1 Grounded emitter output
characteristics
3.5mA
3.0mA
4.5mA
4.0mA
5.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
IB=0mA
2.00
V)
1000
100
-DC CURRENT GAIN
FE
h
10
1 2 5 10 20 50 100 200 500 1000
IC-COLLECTOR CURRENT (
Ta=25°C
VCC=5V
mA)
Fig.2 DC current gain vs. collector
current ( Ι )
SSTA56 / MMSTA56
1000
Ta=125°C
25°C
3V
1V
100
hFE-DC CURRENT GAIN
10
1
−40°C
10 100 100
IC-COLLECTOR CURRENT (
Fig.3 DC current gain vs. collector
current ( ΙΙ )
VCE=3V
mA)
0
V)
I
C
/
IB=10
0.3
Ta=125°C
0.2
0.1
COLLECTOR EMITTER SATURATION VOLTAGE (
CE(SAT)
0
V
1 10 100 1000
IC-COLLECTOR CURRENT (
mA)
−40
25
°C
°C
Fig.4 Collector emitter saturation
voltage vs. collector current
500
100
pF)
CAPACITANCE (
10
5
0.5
1 10 50
REVERSE BIAS VOLTAGE (
Cib
Cob
Ta=25
f=1MHz
V)
°C
Fig.7 Input/output capecitance
vs. voltage
1.8
V)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
BASE EMITTER SATURATION VOLTAGE (
0.2
BE(SAT)
V
0
1 10 100 1000
IC-COLLECTOR CURRENT (
Fig.5 Base-emitter saturation
voltage vs. collector current
1000
MHz)
100
10
CURRENT GAIN-BANDWIDTH PRODUCT (
1
10 100 1000
IC-COLLECTOR CURRENT (
Fig.8 Gain bandwidth product
!
vs. collector current
Ta=25
I
C
/
IB=10
mA)
Ta=25
VCE=10V
mA)
°C
1.8
1.6
V)
1.4
1.2
1.0
0.8
0.6
0.4
BASE EMITTER VOLTAGE (
0.2
BE(ON)
V
0
1 10 100 1000
Ta=−40
°C
25
°C
125
°C
IC-COLLECTOR CURRENT (
VCE=3V
mA)
Fig.6 Grounded emitter propagation
characteristics
°C
Rev.A 2/2
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commer c i a l l y
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this documentare designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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