ROHM MMSTA06, SSTA06 Schematic [ru]
SSTA06 / MMSTA06
Transistors
NPN General Purpose Transistor
SSTA06 / MMSTA06
zFeatu res
1) BV
CEO < 80V ( IC=1mA)
2) Complements the SSTA56 / MMST A56.
zPackage, marking and packaging specifications
Part No. SSTA06
Packaging type
Mark
Code
Basic ordering unit (pieces)
SST3
R1G
T116
3000
MMSTA06
SMT3
R1G
T146
3000
zAbsolute maximum ratings (Ta=25°C)
C
Limits
80
80
4
0.5
0.2
0.35
150
−55 to +150
Collector-base voltage
Parameter
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation P
Junction temperature
Storage temperature
∗ Mounted on 7 x 5 x 0.6mm ceramic substrate.
Symbol
V
V
V
Tstg
CBO
CEO
EBO
I
Tj
C
zElectrical characteristics (T a=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
BV
BV
V
V
CBO
CEO
EBO
I
CBO
I
CEO
CE(sat)
BE(ON)
h
T
f
80
80
4 −−VIE=100µAEmitter-base breakdown voltage
−
−
−−0.25 V IC/IB=100mA/10mA
−−1.2 V
FE
100 −
100 −
100 −−MHz VCE=2V, IE= −10mA, f=100MHz
−
−
−
−
−
zDimensions (Unit : mm)
SSTA06
ROHM : SST3
MMSTA06
ROHM : SMT3
EIAJ : SC-59
Unit
V
V
V
A
W
∗
W
°C
°C
−
V
V
µA
−
IC=100µA
I
C
=1mA
CB
=80V
V
V
CE
=60V
V
CE/IB
V
CE
=1V, IC=10mA
V
CE
=1V, IC=100mA
−
0.1
1
−
=1V/100mA
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
Rev.B 1/3
SSTA06 / MMSTA06
Transistors
zElectrical characteristics curves
100
mA)
80
(
C
60
40
20
COLLECTOR CURRENT : I
500µA
Ta=25˚C
0
1.0 2.0 3.0 4.0
COLLECTOR-EMITTER VOLTAGE : V
450µA
400µA
350µA
300µA
250µA
200µA
150µA
100µA
50µA
IB=0µA
Fig.1 Grounded emitter output
characteristics
CE
(
V)
1000
5.00
V)
(
Ta=25˚C
CE(sat)
C
/ I
B
=10
I
0.3
0.2
0.1
0
COLLECTOR EMITTER SATURATION VOLTAGE : V
1 10 100 1000
COLLECTOR CURRENT : IC (
Ta=125˚C
−40˚C
25˚C
mA)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Ta=25˚C
FE
100
DC CURRENT GAIN : h
10
0.1 101.0 100 1000
COLLECTOR CURRENT : IC (
mA)
Fig.3 DC current gain vs. collector current ( I )
5V
VCE=10V
3V
1V
1000
FE
100
DC CURRENT GAIN : h
10
0.1 101.0 100 1000
COLLECTOR CURRENT I
Ta=125˚C
25˚C
−40˚C
C :
(
mA)
Fig.4 DC current gain vs. collector current ( II )
Ta=25
VCE=5V
˚C
1.8
V)
(
1.6
BE(sat)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
ASE EMITTER SATURATION VOLTAGEV :
0
1 10 100 1000
Ta=−40
25˚C
125˚C
COLLECTOR CURRENT : IC (
Ta=25
IC / IB=10
˚C
mA)
Fig.5 Base-emitter saturation
voltage vs. collector current
˚C
Rev.B 2/3
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